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    TRANSISTOR WH Search Results

    TRANSISTOR WH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EE-125

    Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
    Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor


    Original     		PDF KDT5001A KDT5001A EE-125 photo transistor high current photo transistor PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"

    PHOTO TRANSISTOR

    Abstract: 640nm "photo transistor" photo ic KDT5001A
    Text: NEW PRODUCT Silicon photo transistor KDT5001A Description The KDT5001A is high sensitivity silicon photo transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features - Higly sensitive photo transistor.


    Original     		PDF KDT5001A KDT5001A 640nm PHOTO TRANSISTOR 640nm "photo transistor" photo ic

    Untitled

    Abstract: No abstract text available
    Text: Silicon photo transistor KDT5001A Dimensions The KDT5001A is high sensitivity silicon photo [Unit : mm] transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor


    Original     		PDF KDT5001A KDT5001A

    Untitled

    Abstract: No abstract text available
    Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor


    Original     		PDF KDT5001A KDT5001A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		PDF 2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044

    2SB1424

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


    Original     		PDF 2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original     		PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Darlington 40A

    Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
    Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SQD200A40/60 E76102 SQD200A 400/600V SQD200A40 SQD200A60 SQD200A40 Darlington 40A SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor 380 darlington

    SQD300A60

    Abstract: A1380 300V switching transistor SQD300A40 M6 transistor
    Text: TRANSISTOR MODULE SQD300A40/60 UL;E76102 M SQD300A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SQD300A40/60 E76102 SQD300A 400/600V SQD300A40 SQD300A60 SQD300A40 SQD300A60 A1380 300V switching transistor M6 transistor

    300V switching transistor

    Abstract: Vbe 40 transistor QCA300BA60
    Text: TRANSISTOR MODULE Hi- QCA300BA60 UL;E76102 M QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 200ns) 400mA 300V switching transistor Vbe 40 transistor

    QCA300BA60

    Abstract: 675g M6 transistor
    Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor

    QCA300BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		PDF QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A

    advantage and disadvantage of igbt

    Abstract: HFBR1531Z HFBR-1522ETZ
    Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence


    Original     		PDF AFBR-0546Z AFBR-0548Z HFBR-0543Z AV02-3407EN AFBR-1624Z/1629Z AFBR-2624Z/2529Z AV02-2699EN HFBR-0500ETZ IEC60664-1 AV02-3500EN advantage and disadvantage of igbt HFBR1531Z HFBR-1522ETZ

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


    Original     		PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab

    C2E1

    Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


    Original     		PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 transistor QCA75A60 QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


    Original     		PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    2SD2696

    Abstract: No abstract text available
    Text: 2SD2696 Transistors Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) 1.2 0.32 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size.


    Original     		PDF 2SD2696 400mA 300mA 100mA 2SD2696

    vvvf motor

    Abstract: 600v 100a servo motors QCA100AA100 QCA100AA120 dc motor control 100A 1000V 20A transistor E76102 transistor 2A
    Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 M QCA100AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    Original     		PDF QCA100AA100 E76102 QCA100AA100 QCA100AA120 vvvf motor 600v 100a servo motors QCA100AA120 dc motor control 100A 1000V 20A transistor transistor 2A

    QCA75A60

    Abstract: QCB75A60 QCA75A QCA75A40 QCB75A40 1A 300V DARLINGTON 1A 300V TRANSISTOR
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 M QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 75A, VCEX 400/600V


    Original     		PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 400/600V QCA75A40 QCA75A60 QCB75A40 QCB75A60 QCA75A40 QCA75A60 QCB75A60 1A 300V DARLINGTON 1A 300V TRANSISTOR

    QCA50A

    Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
    Text: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V


    Original     		PDF QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B40 QCA50B60 QCA50A40 QCA50A60 QCA50B40 QCA50A QCA50A60 QCA50B60

    BFR96

    Abstract: BFR96 TRANSISTOR transistor bfr96
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


    OCR Scan     		PDF BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Power Bipolar Transistors „ Transistor Safe _Operating Area SOAR TRANSISTOR SAFE OPERATING AREA (SOAR) Average junction temperature There are two main limiting factors which affect the power handling ability of a transistor; the average


    OCR Scan     		PDF

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers


    OCR Scan     		PDF BFR96 Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1