TRANSISTOR WITH GAIN 10 Search Results

TRANSISTOR WITH GAIN 10 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR WITH GAIN 10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
02D2G Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot	Original	PDF	MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Untitled Abstract: No abstract text available Text: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)	Original	PDF	BCX17 BCX17 R1120A
18002D2 Abstract: No abstract text available Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain	Original	PDF	MJD18002D2 MJD18002D2 18002D2
MJD18002D2 Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain	Original	PDF	MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
Untitled Abstract: No abstract text available Text: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to	Original	PDF	BUL642D2 BUL642D2
bul45d2g Abstract: BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot	Original	PDF	BUL45D2G BUL45D2G BUL45D2/D BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
BCX17 Abstract: BCX19 T116 Text: BCX17 Transistors PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. zFeatures 1 High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19. zDimensions Unit : mm)	Original	PDF	BCX17 BCX19. BCX17 BCX19 T116
NESG2046M33 Abstract: NESG2107M33 Text: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor	Original	PDF	PA880TS NESG2046M33, NESG2107M33) S21e2 NESG2046M33 NESG2107M33 NESG2046M33 NESG2107M33
transistor NEC B 617 Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357	Original	PDF	2SC5336 2SC3357 2SC5336-T1 transistor NEC B 617 nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
2SC5800 Abstract: NESG2046M33 Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor	Original	PDF	PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33
DUAL TRANSISTOR Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.	Original	PDF	OT-363 QW-R218-024 DUAL TRANSISTOR
2STX2220 Abstract: JESD97 X2220 Text: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description	Original	PDF	2STX2220 2002/93/EC X2220 2STX2220 JESD97 X2220
npn transistor 400 volts.10 amperes Abstract: No abstract text available Text: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar	Original	PDF	MJE18004D2 MJE18004D2 npn transistor 400 volts.10 amperes
18004D2 Abstract: AYWW marking code IC MJE18004D2 MJE18004D2G MPF930 MTP12N10 MTP8P10 MUR105 Text: MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network http://onsemi.com POWER TRANSISTORS 5 AMPERES, 1000 VOLTS, 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar	Original	PDF	MJE18004D2G MJE18004D2 MJE18004D2/D 18004D2 AYWW marking code IC MJE18004D2G MPF930 MTP12N10 MTP8P10 MUR105

369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	PDF	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	PDF	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
D42DG Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	PDF	BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105
d1589 Abstract: transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC5179 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • High gain with low operating current	Original	PDF	PPA827TF 2SC5179) PPA827TF-T1 d1589 transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	PDF	MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010.
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UMT1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMT1N is a dual transistor, including two PNP transistors. It uses UTC’s advanced technology to provide the customers with high DC current gain, etc.	Original	PDF	OT-363 QW-R218-025
High Voltage Switching Transistor Abstract: MMDT5551 Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	PDF	MMDT5551 MMDT5551 MMDT5551L-AL6-R MMDT5551G-AL6-R OT-363 QW-R218-022 High Voltage Switching Transistor
NE661M05 Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz	Original	PDF	NE661M05 NE661M05-T1 PU10323EJ02V0DS NE661M05
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current	OCR Scan	PDF	2SC5507 2SC5507-T2 Rn/50 P13864E 13864E J1V0DS00
S 9012 H 331 transistor Abstract: s 9013 c 331 transistor Ic fr 9888 ic 9399 g NEC 14324 UPA827TF S 9013 H 331 transistor NEC 8701 transistor 9013 H NPN IC 7409 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR /¿PA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD FEATURES • PACKAGE DRAWINGS (Unit: mm) High gain with low operating current	OCR Scan	PDF	uPA827TF 2SC5179) tPA827TF S 9012 H 331 transistor s 9013 c 331 transistor Ic fr 9888 ic 9399 g NEC 14324 S 9013 H 331 transistor NEC 8701 transistor 9013 H NPN IC 7409

TRANSISTOR WITH GAIN 10 Search Results

TRANSISTOR WITH GAIN 10 Result Highlights (5)

TRANSISTOR WITH GAIN 10 Datasheets Context Search

02D2G

Untitled

18002D2

MJD18002D2

Untitled

bul45d2g

BCX17

NESG2046M33

transistor NEC B 617

2SC5800

DUAL TRANSISTOR

2STX2220

npn transistor 400 volts.10 amperes

18004D2

369D

369D

D42DG

d1589

Untitled

Untitled

High Voltage Switching Transistor

NE661M05

Untitled

S 9012 H 331 transistor