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    TRANSISTOR YB Search Results

    TRANSISTOR YB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR YB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    NTM2369

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NTM2369 HIGH SPEED SW ITC H IN G . GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E S C R IP T IO N T he N T M 2 3 6 9 is N P N transistor, designed for general purpose am plifier and high speed sw itching applications for h yb rid 1C.


    OCR Scan     		PDF NTM2369 NTM2369

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1005 is designed fo r audio frequency power am p lifie r application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SD1005 2SD1005 2SB804

    ta69

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SB798 2SB798 2SD999 ta69

    2SA1173

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SA1173 is designed fo r audio frequency pream plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SA1173 2SC2780 2SA1173

    2SB1301

    Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SB1301 2SB1301 2SD1952 MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134

    2SA1609

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1609 HIGH VOLTAGE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SA1609 is designed for audio frequency preamplifier application, especially in H ybrid Integrated Circuits. FEATURE • High Collector to Em itter Voltage : Vc e o > -1 4 0 V


    OCR Scan     		PDF 2SA1609 2SA1609

    2SC3617

    Abstract: IEI-1213 MEI-1202 MF-1134 TN3200
    Text: DATA SHEET SILICON TRANSISTOR 2S C 3617 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SC 3617 is designed fo r audio frequency power am plifier and switching application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SC3617 2SC3617 IEI-1213 MEI-1202 MF-1134 TN3200

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SB800 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE D IM ENSIONS


    OCR Scan     		PDF 2SB800 2SB800 2SD1001

    sl-100 TRANSISTOR

    Abstract: SL 100 NPN Transistor MF-1134 NEC IR nec transistor selection guide 2SC3554 IEI-1213
    Text: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S C 3554 is designed fo r high Voltage Switching application, especially in H ybrid Integrated Circuits. FEATURES PACAKAGE DIMENSIONS in millimeters • World Standard M iniature Package


    OCR Scan     		PDF 2SC3554 -10mA sl-100 TRANSISTOR SL 100 NPN Transistor MF-1134 NEC IR nec transistor selection guide IEI-1213

    c 1583 transistor

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD1583-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2SD1583-Z ¡5 designed fo r Audio Frequency A m plifier and Switching, especially in H ybrid Integrated Circuits. FEATURE PACKAGE DIMENSIONS • High hpE in m illim eters •


    OCR Scan     		PDF 2SD1583-Z c 1583 transistor

    2SD1000

    Abstract: 2SB799 IEI-1213 MEI-1202 MF-1134 TC-5494A SOT-89 transistor marking LM
    Text: DATA SHEET SILICON TRANSISTOR 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1000 is designed fo r audio frequency power am plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package


    OCR Scan     		PDF 2SD1000 2SD1000 OT-89 2SB799 2SB799 IEI-1213 MEI-1202 MF-1134 TC-5494A SOT-89 transistor marking LM

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pream plifier application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M iniature Package


    OCR Scan     		PDF 2SC2780 2SC2780

    2SD1164

    Abstract: CCS-32
    Text: SILICON TRANSISTOR 2SD1164-Z NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR M P -3 DESCRIPTION 2SD1164-Z is designed fo r Low Frequency A m plifier and Switching, especially in H ybrid Integrated Circuits. FEATURE PACKAGE DIMENSIONS in millimeters • High hpE : hpg =2000 to 30000


    OCR Scan     		PDF 2SD1164-Z 2SD1164-Z Hli10 2SD1164 CCS-32

    Untitled

    Abstract: No abstract text available
    Text: fVEC SILICON TRANSISTOR ElfCTR 0ND EV IC 2SB804 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIOI The 2SB804 designed fo r audio frequency power a m plifier application, especially in H ybrid Integrated Circuits. FEATURES • W orld Standard M iniature Package


    OCR Scan     		PDF 2SB804 2SB804 2SD1005

    Untitled

    Abstract: No abstract text available
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SD1000 is designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIM EN SIO N S


    OCR Scan     		PDF 2SD1000 2SD1000 2SB799

    Untitled

    Abstract: No abstract text available
    Text: 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D fOUPIBt "^-33-35^ KT5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor


    OCR Scan     		PDF 1S697 Amperes/1200 KT521205

    QM50DY-H

    Abstract: No abstract text available
    Text: MITSUBISHI HYBRID ICs M57955L HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES DESCRIPTION OUTLINE DRAWING M 57955L is a H ybrid Integrated C ircuit desig n ed for drivin g H igh Dim ensions in mm Beta Transistor M odules QM50DY-HB, etc., in an Inverter application.


    OCR Scan     		PDF M57955L 57955L QM50DY-HB, 2500Vrm QM50DY-H

    diode t25 4 c6

    Abstract: 7421 transistor transistor k 4213 1S697 KT521205 KTS21205 T-33-35 KT-52
    Text: fOUPIBt 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D "^-33-35^ K T5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor


    OCR Scan     		PDF 0DD23Ã KT521205 1S697 Amperes/1200 KT521205 diode t25 4 c6 7421 transistor transistor k 4213 1S697 KTS21205 T-33-35 KT-52

    Untitled

    Abstract: No abstract text available
    Text: SEC SILICON TRANSISTOR ElfCTRON DEVICE 2SD1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D ESCRIPTION The 2SD1001 is designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits. FEA TU R ES • W orld Standard M iniature Package


    OCR Scan     		PDF 2SD1001 2SD1001 2SB800

    2sc3518

    Abstract: c 3518 transistor mp
    Text: :*A i à SH h t i SILICON TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S C 3518-Z is designed fo r A u d io Frequency A m p lifie r and PACKAGE DMENSIONS in millimeters S w itching, esp ecially in H ybrid Integrated Circuits. FEATURES


    OCR Scan     		PDF 2SC3518-Z 3518-Z IEI-1209) 2sc3518 c 3518 transistor mp

    BCY67

    Abstract: HTI 2E 101S Q62702-C254
    Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in


    OCR Scan     		PDF BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254

    2sc3518

    Abstract: ml160
    Text: SILICON TRANSISTOR 2 S C 3 5 1 8 -Z NPN SILICON EPITAXIAL TRANSISTOR M P-3 DESCRIPTION 2SC3518-Z desianed fo r Audio Frequency A m plifier and Switching, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim e te r s • High DC Current Gain hpg = 100 to 400


    OCR Scan     		PDF 2SC3518-Z 2SC3518-Z 2SA1385-Z 2sc3518 ml160