la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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NPN TRANSISTOR Z4
Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
Text: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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PH3134-65M
225t010
iEV-15
NPN TRANSISTOR Z4
b 595 transistor
transistor z4 n
transistor ZY
PH3134-65M
572i
transistor b 595
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2SC738
Abstract: 2SC7 FT440
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor
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2SC738
2SC738
100MHz,
440MHztyp
SC-43
100MHz
2SC7
FT440
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BUK545
Abstract: BUK545-60A BUK545-60B
Text: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
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7110ASfc.
BUK545-60A/B
OT186
BUK545
10CHXh
ID/100
BUK545-60A
BUK545-60B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in automotive and general purpose
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BUK481-100A
OT223
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PDF
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2SB1628
Abstract: marking ZY transistor NEC 560
Text: DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension PACKAGE DRAWING UNIT: mm and is ideal for DC/DC converters and mortor drivers.
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2SB1628
2SB1628
C11531E)
marking ZY
transistor NEC 560
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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TRANSISTOR BC 252
Abstract: BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954
Text: 7^5gS37 P05A771 G • ^ T ' 3 3 - 3 SGS-THOMSON B U V 56 s lü iO T K s K S S G S-THOMSON 3GE D FAST SWITCHING POWER TRANSISTOR ■ SUITABLE FOR SWITCH MODE POWER SUP PLY, UPS, DC AND AC MOTOR CONTROL DESC RIPTIO N High voltage, high speed transistor suited for use on
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ppgfl771
BUV56
T-33-13
TRANSISTOR BC 252
BUV56
L05A
schematic diagram UPS
15V 5A Power Supply Schematic
380v UPS diagram
Scans-007954
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induktiv
Abstract: "PNP Transistor" npn transistors,pnp transistors SS TRANSISTOR pnptransistor pnp transistor s 0601 NPOS EI0801NPCS npntransistor
Text: Näherungsschalter Induktiv Rostfreies Stahlgehäuse Typen EI, Ø 6,5, M 8 • Rostfreies Stahlgehäuse, zylindrisch • Durchmesser: Ø 6,5, M 8, • Schaltabstand: 1 bis 2 mm • Betriebsspannung: 10 bis 40 VDC • Ausgang: NPN/PNP-Transistor, Schliesser und Öffner
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New Jersey Semiconductor
Abstract: No abstract text available
Text: <zy\£.uj J. , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1941 Silicon PNP Power Transistor I I \ •-< DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @lc=- 7A
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2SA1941
2SC51
-50mA;
-140V;
New Jersey Semiconductor
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transistor pnp 3015
Abstract: transistor 1202 1204 transistor 1202 transistor ei 48 f npn 3010 NPOS EI 33 npn transistors,pnp transistors PPOSS1
Text: Näherungsschalter Induktiv Rostfreies Stahlgehäuse Typen EI, M 12, M 18, M 30 • Rostfreies Stahlgehäuse, zylindrisch • Durchmesser: M 12, M 18, M 30 • Kurzbauform oder Langbauform • Schaltabstand: 2 - 15 mm • Betriebsspannung: 10 - 40 VDC • Ausgang: NPN/PNP-Transistor, Schliesser und Öffner
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zy- transistor
Abstract: qm50tb2hb
Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB Collector current. 50A Collector-emitter voltage.1000V • hFE DC current gam. 750 • Insulated Type • UL Recognized
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QM50TB-2HB
E80276
E80271
zy- transistor
qm50tb2hb
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transistor smd zy
Abstract: smd transistor zy zy smd transistor transistor SMD marking ZY smd marking zx zy- transistor transistor smd zx smd transistor 560 2SB1628 smd transistor 660
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1628 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO -20 V Collector to Emitter Voltage
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2SB1628
transistor smd zy
smd transistor zy
zy smd transistor
transistor SMD marking ZY
smd marking zx
zy- transistor
transistor smd zx
smd transistor 560
2SB1628
smd transistor 660
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323 Excellent hFE Linearity Complementary to KTC4076 APPLICATIONS General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
KTA2015
KTC4076
-100mA
-400mA
-100mA,
-10mA
-20mA
25Min
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transistor ZY
Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.
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KTA2015W
100mW)
KTC4076.
OT-323
BL/SSSTF048
transistor ZY
ZY marking
zy- transistor
marking zo sot
KTC4076
marking ZY
KTA2015W
marking code ZO
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KTD1898
Abstract: No abstract text available
Text: KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package General Purpose Application 4 1 CLASSIFICATION OF hFE 1 A Product-Rank
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KTD1898
OT-89
KTD1898-O
KTD1898-Y
KTD1898-GR
10-Nov-2011
500mA
500mA,
100MHz
KTD1898
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
KTD1898
500mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage
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OT-89
KTD1898
OT-89
500mA
500mA,
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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AN569
Abstract: 632 transistor motorola MTG15P10 AN569 in Motorola Power Applications
Text: Order this data sheet by MTG15P10/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Des/gnerfs Data Sheet MTG15PI0 Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, regulahigh speed power switching applications such as switching
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MTG15P10/D
MTG15PI0
MTH20PI
AN104O.
AN569
632 transistor motorola
MTG15P10
AN569 in Motorola Power Applications
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Untitled
Abstract: No abstract text available
Text: 2SA1225 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 3 Ç A1 11 *5 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 6 8 MAX. C. 6 MAX. * • High Transition Frequency : fr= 100MHz (Typ.) Complementary to 2SC2983
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2SA1225
100MHz
2SC2983
961001EAA2'
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KTA2015
Abstract: No abstract text available
Text: KTA2015 SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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KTA2015
OT-323
-100mA
-400mA
-100mA,
-10mA
-20mA
KTA2015
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PDF
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Diode GP 638
Abstract: No abstract text available
Text: SIEMENS BUZ 61 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 61 400 V h 12.5 A flbsion 0.4 n Package Ordering Code TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Values Unit A Continuous drain current
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O-220
C67078-S1341-A2
150stics
Diode GP 638
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 20 Vbs 100 V *> ^DS on Package Ordering Code 13.5 A 0 .2 Q TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current Id 7b = 28 °C
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O-220
C67078-S1302-A2
O-220AB
GPT35155
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