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    TRANSISTORS 1HZ Search Results

    TRANSISTORS 1HZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 1HZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904 O2N3905 100mA

    transistor 2N3905

    Abstract: 2N3906 hie 2n3906 ST 2n3904 transistor 2N3906 datasheet 2N3906 plastic 2n3906 equivalent transistor 2n3906 npn pin configuration NPN transistor 2n3906 transistor 2N3906
    Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904 100mA transistor 2N3905 2N3906 hie 2n3906 ST 2n3904 transistor 2N3906 datasheet 2N3906 plastic 2n3906 equivalent transistor 2n3906 npn pin configuration NPN transistor 2n3906 transistor 2N3906

    2N3906

    Abstract: transistor 2N3905 2n3906 equivalent transistor ST 2n3904 2N3906 plastic 2n3906 hie 2n3906 equivalent 2N3903 2N3904 2N3905
    Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904 100mA 2N3906 transistor 2N3905 2n3906 equivalent transistor ST 2n3904 2N3906 plastic 2n3906 hie 2n3906 equivalent

    2N3906 hie

    Abstract: 2n3906 2n3906 equivalent transistor 2N3905 transistor ST 2N3904 ST 2n3904 2N3906 plastic transistor 2N3905 st2n3906 pin configuration NPN transistor 2n3906
    Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904 100mA 2N3906 hie 2n3906 2n3906 equivalent transistor transistor ST 2N3904 ST 2n3904 2N3906 plastic transistor 2N3905 st2n3906 pin configuration NPN transistor 2n3906

    2n3906

    Abstract: 2N3905 transistor 2N3905 st2n3906 2N3906 hie 2N3906 plastic data sheet transistor 2n3906 ST 2n3904 transistor 2N3906 datasheet 2N3903
    Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904 100mA 2n3906 transistor 2N3905 st2n3906 2N3906 hie 2N3906 plastic data sheet transistor 2n3906 ST 2n3904 transistor 2N3906 datasheet

    0119 Solar Lamp Controller

    Abstract: transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M
    Text: 24 Electronic Components pp751-856:Layout 1 24/1/14 16:12 Page 751 Electronic Components CAPACITORS OPTOELECTRONICS Ceramic Capacitors Tantalum Capacitors Variable Capacitors 752 759 759 DISCRETE SEMICONDUCTORS Bridge Rectifier Diodes Diodes Transistors 766


    Original     		PDF pp751-856 127mm 525mm 1550kHz 280kHz 2000m) 100mm 0119 Solar Lamp Controller transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M

    PN4355

    Abstract: PN4356 PN4354
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage


    Original     		PDF ISO/TS16949 PN4354 PN4355 PN4356 C-120 PN4354 56REV081001 PN4355 PN4356

    2SA1391

    Abstract: 2SC3382 ITR03367 ITR03368 ITR03369
    Text: 2SA1391 / 2SC3382 Ordering number : EN1942B SANYO Semiconductors DATA SHEET 2SA1391 / 2SC3382 PNP / NPN Epitaxial Planar Silicon Transistors Low Noise AF Amp Applications Features • • • Adoption of FBET process. AF amp. Low-noise use. Specifications : 2SA1391


    Original     		PDF 2SA1391 2SC3382 EN1942B 2SA1391 2SC3382 ITR03367 ITR03368 ITR03369

    2SA1391

    Abstract: 2SC3382 ITR03367 ITR03368 ITR03369
    Text: 2SA1391 / 2SC3382 Ordering number : EN1942B SANYO Semiconductors DATA SHEET 2SA1391 / 2SC3382 PNP / NPN Epitaxial Planar Silicon Transistors Low Noise AF Amp Applications Features • • • Adoption of FBET process. AF amp. Low-noise use. Specifications : 2SA1391


    Original     		PDF 2SA1391 2SC3382 EN1942B 2SA1391 2SC3382 ITR03367 ITR03368 ITR03369

    2sc2362

    Abstract: 2SA1016 2SA1016K 2SC2362K d 05724 2SC2362K – G Rank
    Text: Ordering number : EN0572F 2SA1016, 1016K / 2SC2362, 2362K SANYO Semiconductors DATA SHEET 2SA1016, 1016K 2SC2362, 2362K PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications Specifications : 2SA1016, 1016K Absolute Maximum Ratings at Ta=25°C


    Original     		PDF EN0572F 2SA1016, 1016K 2SC2362, 2362K 1016K 2sc2362 2SA1016 2SA1016K 2SC2362K d 05724 2SC2362K – G Rank

    4355 data sheet

    Abstract: PN4354 PN4355 PN4356
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage


    Original     		PDF PN4354 PN4355 PN4356 C-120 PN4354 56REV081001 4355 data sheet PN4355 PN4356

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage


    Original     		PDF PN4354 PN4355 PN4356 C-120 PN4354 56REV081001

    2sc33825

    Abstract: 2SC3382 4DNF
    Text: Ordering number:ENN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. · Low-noise use. unit:mm 2003B [2SA1391/2SC3382] 5.0 4.0 Noise Test Circuit


    Original     		PDF ENN1942A 2SA1391/2SC3382 2003B 2SA1391/2SC3382] 2SA1391 2sc33825 2SC3382 4DNF

    a1016

    Abstract: 2SA1016 C2362 2SC2362 2SC2362K 2SA1016K ENN572E 1016k
    Text: Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 2


    Original     		PDF ENN572E 2SA1016, 1016K/2SC2362, 2362K 2003B 2362K] 1016K a1016 2SA1016 C2362 2SC2362 2SC2362K 2SA1016K ENN572E 1016k

    PN4354

    Abstract: PN4355 PN4356
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage


    Original     		PDF PN4354 PN4355 PN4356 C-120 PN4354 56REV081001 PN4355 PN4356

    staircase generator circuit

    Abstract: CA3130S CA3160 single supply Wien Bridge Oscillator CA3600 picoammeter schematic diagram CA3600 equivalent CA3160E CA3160T 1N9148
    Text: CA3160, CA3160A September 1998 4MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output The CA3160A and CA3160 are integrated circuit operational amplifiers that combine the advantage of both CMOS and bipolar transistors on a monolithic chip. The CA3160 series are


    Original     		PDF CA3160, CA3160A CA3160A CA3160 CA3130 staircase generator circuit CA3130S single supply Wien Bridge Oscillator CA3600 picoammeter schematic diagram CA3600 equivalent CA3160E CA3160T 1N9148

    ic ca3140

    Abstract: CA3130S picoammeter schematic diagram CA3160 CA3600 staircase generator circuit pin diagram of IC ca3130 picoammeter CA3160E picoammeter circuit
    Text: CA3160, CA3160A Semiconductor September 1998 4MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output The CA3160A and CA3160 are integrated circuit operational amplifiers that combine the advantage of both CMOS and bipolar transistors on a monolithic chip. The CA3160 series are


    Original     		PDF CA3160, CA3160A CA3160A CA3160 CA3130 CA3160 125oC ic ca3140 CA3130S picoammeter schematic diagram CA3600 staircase generator circuit pin diagram of IC ca3130 picoammeter CA3160E picoammeter circuit

    CA3080 CAN

    Abstract: ca3140 application circuit CA5160
    Text: CA5160 Data Sheet 4MHz, BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output CA5160 is an integrated circuit operational amplifier that combines the advantage of both CMOS and bipolar transistors on a monolithic chip. The CA5160 is a frequency


    Original     		PDF CA5160 FN1924 CA5160 CA5130 CA3080 CAN ca3140 application circuit

    gaussmeter

    Abstract: 662 transistor
    Text: Bipolar Magnet Power Supplies Models 662, 665, 668 - Stable current regulation, 100 parts per million - Low ripple noise with the series regulation made by a bank of transistors - CE compliant - Power-on and power-off pushbuttons with power light indicator


    Original     		PDF

    "to-98" package

    Abstract: 2N3415 2n3416 2n3417
    Text: G E SOLID STATE 3875081 ~ 01 G E S O L I D STATE DE | BÖ7S0Ö1 □□IVTIS T 01E 17915 D Signal Transistors 2N3414-17, GES3414-17 - r a Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for


    OCR Scan     		PDF 2N3414-17, GES3414-17 2N3414-17and GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 "to-98" package 2N3415 2n3416 2n3417

    2N2926

    Abstract: 2n2926 transistor "to-98" package 2N226 100-C
    Text: G E SOLI» STATE 3875081 G E SOLID STATE Öl DE 1 3075051 ODITTOT 3 j ~ 01E 17909 D - Signal Transistors 2N2£26 T~2,?~/ T Silicon Transistors TO-98 The G E/RCA 2N2926 is a planar passivated N PN Silicon tran­


    OCR Scan     		PDF 2N2926 2N2926 100-C 2n2926 transistor "to-98" package 2N226 100-C

    2N2926

    Abstract: 2N 2926
    Text: G E SOLID STATE 3875081 01 G E S O L ID DE 3Ö7SDÖ1 aD17cJ0ci 3 | ~ STA TE 01E 17909 D Signal Transistors 2N2£26 7 2, ? ~ / î t ' Silicon Transistors TO-98 The G E / R C A 2N 2926 is a planar passivated N P N silicon tran­ sistor intended for genera purpose applications. The planar


    OCR Scan     		PDF aD17c 2N2926 100-C 2N2926 2N 2926

    92C3-427S0

    Abstract: 42766 2N3414 GE 2N3414 2n3417 output admittance hoe 2N3416 GES3414 GES3416 X10-3 2n3414-17
    Text: G E SO LID S T A T E ~ 01 3 875 081 G E S O L I D S T A T E DE§3fl750ñl □□IVTIS T 01E D 17915 Signal Transistors 2N3414-17, GES3414-17 T a ? - / ? Silicon IVansistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for


    OCR Scan     		PDF 2N3414-17, GES3414-17 2N3414-17 GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 GES3414 GES3416 92C3-427S0 42766 2N3414 GE 2n3417 output admittance hoe X10-3

    TRANSISTOR noise figure measurements

    Abstract: transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32
    Text: IEEE 1990 Bipolar Circuits and Technology Meeting 10.1 THE INFLUENCE OF NON-IDEAL BASE CURRENT ON l / F NOISE BEHAVIOUR OF BIPOLAR TRANSISTORS M.C.A.M. Koolen and J.C.J. Aerts Philips Research Laboratories P.O. Box 80.000 5600 JA Eindhoven - The Netherlands


    OCR Scan     		PDF ED-32, TRANSISTOR noise figure measurements transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32