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    TRANSISTORS 1UW Search Results

    TRANSISTORS 1UW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 1UW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hp 5082-4204 pin photodiode

    Abstract: 50hz wien oscillator yellow springs thermistors ysi thermistor network 44201 anemometer circuitry YSI 44018 YSI thermistor low distortion Wien Bridge Oscillator amplitude controlled Wien Bridge Oscillator anemometer
    Text: Application Note 5 December 1984 Thermal Techniques in Measurement and Control Circuitry Jim Williams Designers spend much time combating thermal effects in circuitry. The close relationship between temperature and electronic devices is the source of more design headaches


    Original     		PDF LT3525A LT3523A 20s/DIV hp 5082-4204 pin photodiode 50hz wien oscillator yellow springs thermistors ysi thermistor network 44201 anemometer circuitry YSI 44018 YSI thermistor low distortion Wien Bridge Oscillator amplitude controlled Wien Bridge Oscillator anemometer

    Untitled

    Abstract: No abstract text available
    Text: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps FEATURES n n n n n n n n DESCRIPTION 14V/ s Slew Rate: 10V/μs Min 5MHz Gain-Bandwidth Product Fast Settling Time: 1.3μs to 0.02% 150μV Offset Voltage LT1057 : 450μV Max 180μV Offset Voltage (LT1058): 600μV Max


    Original     		PDF LT1057/LT1058 LT1057) LT1058) 13nV/â 26nV/â LT1057 300pA LT6011/12 14nV/rtHz,

    LF351 op-amp integrator

    Abstract: tl084 LT LF351 m op-amp integrator LT1057 2N4393 HP 5082-4204 LT1058A P15V application of TL084 LF353 APPLICATION
    Text: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps FEATURES DESCRIPTION n The LT 1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision specifications. It replaces all the popular bipolar and JFET


    Original     		PDF LT1057/LT1058 LT1057 LF412A OP-215 LT1057) LT1058) 13nV/Hz 26n010 14nV/rtHz, 300pA LF351 op-amp integrator tl084 LT LF351 m op-amp integrator 2N4393 HP 5082-4204 LT1058A P15V application of TL084 LF353 APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: Proprietary and Confidential Information of YAMAR Electronics Ltd. YAMAR E le c tro n ic s L td Preliminary Data Sheet SIG40 for DC-LIN Asynchronous Communication Over Noisy Lines This information is preliminary and may be changed without notice 1 GENERAL


    Original     		PDF SIG40 -402C 1252C -552C 1502C DS-SIG40

    T89C51AC2-RLTIM

    Abstract: T89C51AC2 T89C51CC01 TQFP44 80C51 80C52 PLCC44 fah 15 fuse
    Text: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM


    Original     		PDF 80C51 14-sources 16-bit 80C51 21-bit 10-bit T89C51AC2-RLTIM T89C51AC2 T89C51CC01 TQFP44 80C52 PLCC44 fah 15 fuse

    CMOS Single Chip 8-Bit Microcontrollers

    Abstract: 89C51AC2 80C51 80C52 PLCC44 T89C51AC2 TQFP44
    Text: T89C51AC2 8-bit MCU with 32K bytes Flash, 10 bits A/D and EEPROM 1. Description The T89C51AC2 is a high performance CMOS FLASH version of the 80C51 CMOS single chip 8-bit microcontrollers. It contains a 32Kbytes Flash memory block for program and data. The fully static design of the T89C51AC2 allows to


    Original     		PDF T89C51AC2 T89C51AC2 80C51 32Kbytes 89C51AC2 TQFP44 PLCC44 CMOS Single Chip 8-Bit Microcontrollers 89C51AC2 80C52 PLCC44 TQFP44

    bosch me 7.3.1

    Abstract: T89C51CC02 80C51 PLCC28 PLCC-28 SOIC24 SOIC28 TSSOP28 IE-07
    Text: T89C51CC02 8-bit MCU with CAN controller and Flash 1. Description Part of the CANaryTM family of microcontrollers dedicated to CAN network applications, the T89C51CC02 is a low pin count 8-bit Flash microcontroller. Besides the full CAN controller T89C51CC02 provides


    Original     		PDF T89C51CC02 T89C51CC02 80C51 T89C51CC02. 89C51CC02 PLCC28, SOIC28, bosch me 7.3.1 PLCC28 PLCC-28 SOIC24 SOIC28 TSSOP28 IE-07

    sch001

    Abstract: No abstract text available
    Text: T89C51CC01 Enhanced 8-bit MCU with CAN controller and Flash 1. Description The T89C51CC01 is member of the C51 X2 family of 8-bit microcontrollers dedicated to CAN network applications. While remaining fully compatible with the 80C51 it offers a superset of this standard microcontroller. In X2


    Original     		PDF T89C51CC01 T89C51CC01 80C51 T89C51CC01. X000b sch001

    89C51CC01

    Abstract: bosch me 7.3.1 bootloader for 89c51cc01 80C51 PLCC44 T89C51CC01 TQFP44 IDT27 PHS10
    Text: T89C51CC01 Enhanced 8-bit MCU with CAN controller and Flash 1. Description The T89C51CC01 is first member of the CANaryTM family of 8-bit microcontrollers dedicated to CAN network applications. While remaining fully compatible with the 80C51 it offers a superset of this standard microcontroller. In X2


    Original     		PDF T89C51CC01 T89C51CC01 80C51 T89C51CC01. 89C51CC01 TQFP44 PLCC44 CA-BGA64 89C51CC01 bosch me 7.3.1 bootloader for 89c51cc01 PLCC44 TQFP44 IDT27 PHS10

    object counter

    Abstract: object counter circuit 80C51 PLCC44 T89C51CC01 VQFP44
    Text: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM


    Original     		PDF 80C51 14-sources 16-bit 80C51 21-bit 10-bit object counter object counter circuit PLCC44 T89C51CC01 VQFP44

    bootloader for 89c51cc01

    Abstract: 80C51 PLCC44 T89C51CC01 TQFP44 89C51CC01 T89C51CC
    Text: T89C51CC01 Enhanced 8-bit MCU with CAN controller and Flash 1. Description The T89C51CC01 is first member of the CANaryTM family of 8-bit microcontrollers dedicated to CAN network applications. While remaining fully compatible with the 80C51 it offers a superset of this standard microcontroller. In X2


    Original     		PDF T89C51CC01 T89C51CC01 80C51 T89C51CC01. 89C51CC01 TQFP44 PLCC44 CA-BGA64 bootloader for 89c51cc01 PLCC44 TQFP44 89C51CC01 T89C51CC

    TTC 103

    Abstract: PLCC44 T89C51CC01 TQFP44 80C51 12MHz osc
    Text: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM


    Original     		PDF 80C51 14-sources 16-bit 80C51 21-bit 10-bit TTC 103 PLCC44 T89C51CC01 TQFP44 12MHz osc

    DA85

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 www.ti.com SBAS430D – JANUARY 2009 – REVISED MAY 2012 12-/14-/16-Bit, Octal-Channel, Ultralow Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


    Original     		PDF DAC7568 DAC8168 DAC8568 SBAS430D 12-/14-/16-Bit, DAC7568, DAC8168, DAC7568 12-Bit) DA85

    Untitled

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 www.ti.com SBAS430E – JANUARY 2009 – REVISED JANUARY 2014 12-/14-/16-Bit, Octal-Channel, Ultralow Glitch, Voltage Output Digital-to-Analog Converters with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


    Original     		PDF DAC7568 DAC8168 DAC8568 SBAS430E 12-/14-/16-Bit, DAC7568, DAC8168, 12-Bit)

    Untitled

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 www.ti.com SBAS430D – JANUARY 2009 – REVISED MAY 2012 12-/14-/16-Bit, Octal-Channel, Ultralow Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


    Original     		PDF DAC7568 DAC8168 DAC8568 SBAS430D 12-/14-/16-Bit, DAC7568, DAC8168, DAC7568 12-Bit)

    Untitled

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 SBAS430C – JANUARY 2009 – REVISED FEBRUARY 2011 www.ti.com 12-/14-/16-Bit, Octal-Channel, Ultra-Low Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


    Original     		PDF DAC7568 DAC8168 DAC8568 SBAS430C 12-/14-/16-Bit, DAC7568, DAC8168, DAC7568 12-Bit)

    transistors 1UW 18

    Abstract: mosfet HRF3205 1AV Series
    Text: HRF3205, HRF3205L, HRF3205S HARRIS S E M I C O N D U C T O R 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs January 1998 Features Description • 1 00A Note 1 , 55V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF HRF3205, HRF3205L, HRF3205S 1-800-4-HARRIS transistors 1UW 18 mosfet HRF3205 1AV Series

    AN7254

    Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
    Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 0-022O 11e-12 91e-3TRS1 26e-3 07e-6 12e-9 AN7254 RF650N06 RFP50N06 AN-7254 mosfat 24v mosfat RFP70N06 34069

    transistors 1UW

    Abstract: transistors 1UW 18 p06e
    Text: RFF60P06 21 H A R R 'S 25A+, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET Decem ber 1995 Features Package • 2 5 A t, 60V • TO-254AA r D S O N = 0 - 0 3 0 i 2 G A TE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan     		PDF RFF60P06 O-254AA MIL-STD-750, MIL-S-19500, 100ms; 500ms; transistors 1UW transistors 1UW 18 p06e

    Untitled

    Abstract: No abstract text available
    Text: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum


    OCR Scan     		PDF RFF70N06 RFF70N06 0-025i2 MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    transistors 1UW

    Abstract: No abstract text available
    Text: RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum


    OCR Scan     		PDF RFF60P06 RFF60P06 IL-STD-750, IL-S-19500, 100ms; 500ms; transistors 1UW

    DS 25AT

    Abstract: No abstract text available
    Text: RFF70N06 P HHARRIS W S E M I C O N D U C T O R 25At, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET D e ce m b e r 1995 Features Package • 25A+, 60V JE D EC TO -254A A • rDS ON = 0.025i2 GATE • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFF70N06 -254A 025i2 DS 25AT

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


    OCR Scan     		PDF RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA

    UTM ceramic RESISTOR 212-3

    Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
    Text: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components


    OCR Scan     		PDF