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    TRANSISTORS 1UW 18 Search Results

    TRANSISTORS 1UW 18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 1UW 18 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hp 5082-4204 pin photodiode

    Abstract: 50hz wien oscillator yellow springs thermistors ysi thermistor network 44201 anemometer circuitry YSI 44018 YSI thermistor low distortion Wien Bridge Oscillator amplitude controlled Wien Bridge Oscillator anemometer
    Text: Application Note 5 December 1984 Thermal Techniques in Measurement and Control Circuitry Jim Williams Designers spend much time combating thermal effects in circuitry. The close relationship between temperature and electronic devices is the source of more design headaches


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    LT3525A LT3523A 20s/DIV hp 5082-4204 pin photodiode 50hz wien oscillator yellow springs thermistors ysi thermistor network 44201 anemometer circuitry YSI 44018 YSI thermistor low distortion Wien Bridge Oscillator amplitude controlled Wien Bridge Oscillator anemometer PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps FEATURES n n n n n n n n DESCRIPTION 14V/ s Slew Rate: 10V/μs Min 5MHz Gain-Bandwidth Product Fast Settling Time: 1.3μs to 0.02% 150μV Offset Voltage LT1057 : 450μV Max 180μV Offset Voltage (LT1058): 600μV Max


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    LT1057/LT1058 LT1057) LT1058) 13nV/â 26nV/â LT1057 300pA LT6011/12 14nV/rtHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: Proprietary and Confidential Information of YAMAR Electronics Ltd. YAMAR E le c tro n ic s L td Preliminary Data Sheet SIG40 for DC-LIN Asynchronous Communication Over Noisy Lines This information is preliminary and may be changed without notice 1 GENERAL


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    SIG40 -402C 1252C -552C 1502C DS-SIG40 PDF

    LF351 op-amp integrator

    Abstract: tl084 LT LF351 m op-amp integrator LT1057 2N4393 HP 5082-4204 LT1058A P15V application of TL084 LF353 APPLICATION
    Text: LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps FEATURES DESCRIPTION n The LT 1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision specifications. It replaces all the popular bipolar and JFET


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    LT1057/LT1058 LT1057 LF412A OP-215 LT1057) LT1058) 13nV/Hz 26n010 14nV/rtHz, 300pA LF351 op-amp integrator tl084 LT LF351 m op-amp integrator 2N4393 HP 5082-4204 LT1058A P15V application of TL084 LF353 APPLICATION PDF

    T89C51AC2-RLTIM

    Abstract: T89C51AC2 T89C51CC01 TQFP44 80C51 80C52 PLCC44 fah 15 fuse
    Text: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM


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    80C51 14-sources 16-bit 80C51 21-bit 10-bit T89C51AC2-RLTIM T89C51AC2 T89C51CC01 TQFP44 80C52 PLCC44 fah 15 fuse PDF

    CMOS Single Chip 8-Bit Microcontrollers

    Abstract: 89C51AC2 80C51 80C52 PLCC44 T89C51AC2 TQFP44
    Text: T89C51AC2 8-bit MCU with 32K bytes Flash, 10 bits A/D and EEPROM 1. Description The T89C51AC2 is a high performance CMOS FLASH version of the 80C51 CMOS single chip 8-bit microcontrollers. It contains a 32Kbytes Flash memory block for program and data. The fully static design of the T89C51AC2 allows to


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    T89C51AC2 T89C51AC2 80C51 32Kbytes 89C51AC2 TQFP44 PLCC44 CMOS Single Chip 8-Bit Microcontrollers 89C51AC2 80C52 PLCC44 TQFP44 PDF

    bosch me 7.3.1

    Abstract: T89C51CC02 80C51 PLCC28 PLCC-28 SOIC24 SOIC28 TSSOP28 IE-07
    Text: T89C51CC02 8-bit MCU with CAN controller and Flash 1. Description Part of the CANaryTM family of microcontrollers dedicated to CAN network applications, the T89C51CC02 is a low pin count 8-bit Flash microcontroller. Besides the full CAN controller T89C51CC02 provides


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    T89C51CC02 T89C51CC02 80C51 T89C51CC02. 89C51CC02 PLCC28, SOIC28, bosch me 7.3.1 PLCC28 PLCC-28 SOIC24 SOIC28 TSSOP28 IE-07 PDF

    AS3693

    Abstract: AS1333 12v subwoofer car amp circuits Wifi Booster Circuit Diagram AS3931 diagram circuit usb mp3 player with radio fm lcd AS3686A AS3693A 500 watt audio subwoofer as3991
    Text: High Performance Analog IC Portfolio Catalog November 2008 Includes Package Guide High Performance Analog Product Line-up 18 20 26 36 48 60 MOBILE ENTERTAINMENT Mobile Entertainment High Performance Microcontrollers Mobile Entertainment Players 68 76 Audio


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    350mA/W 550-900nm C35EE 32Kx16 AS3693 AS1333 12v subwoofer car amp circuits Wifi Booster Circuit Diagram AS3931 diagram circuit usb mp3 player with radio fm lcd AS3686A AS3693A 500 watt audio subwoofer as3991 PDF

    sch001

    Abstract: No abstract text available
    Text: T89C51CC01 Enhanced 8-bit MCU with CAN controller and Flash 1. Description The T89C51CC01 is member of the C51 X2 family of 8-bit microcontrollers dedicated to CAN network applications. While remaining fully compatible with the 80C51 it offers a superset of this standard microcontroller. In X2


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    T89C51CC01 T89C51CC01 80C51 T89C51CC01. X000b sch001 PDF

    object counter

    Abstract: object counter circuit 80C51 PLCC44 T89C51CC01 VQFP44
    Text: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM


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    80C51 14-sources 16-bit 80C51 21-bit 10-bit object counter object counter circuit PLCC44 T89C51CC01 VQFP44 PDF

    DA8568C

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 SBAS430C – JANUARY 2009 – REVISED FEBRUARY 2011 www.ti.com 12-/14-/16-Bit, Octal-Channel, Ultra-Low Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


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    DAC7568 DAC8168 DAC8568 SBAS430C 12-/14-/16-Bit, DAC7568, DAC8168, DAC7568 12-Bit) DA8568C PDF

    Untitled

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 SBAS430C – JANUARY 2009 – REVISED FEBRUARY 2011 www.ti.com 12-/14-/16-Bit, Octal-Channel, Ultra-Low Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


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    DAC7568 DAC8168 DAC8568 SBAS430C 12-/14-/16-Bit, DAC7568, DAC8168, DAC7568 12-Bit) PDF

    87C511

    Abstract: 80C51 SO20 SO24 SSOP16 SSOP24 83C5111
    Text: T80C5111 Low-pin-count 8-bit microcontroller with A/D converter 1. Description The T80C5111 is a high performance ROM/OTP version of the 80C51 8-bit microcontroller in Low Pin Count package. the same CPU power at a divided by two oscillator frequency. The prescaler allows to decrease CPU and


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    T80C5111 T80C5111 80C51 SSOP16, 66MHz 87C511 SO20 SO24 SSOP16 SSOP24 83C5111 PDF

    DAC7568

    Abstract: DAC8168 DAC8568 TSSOP-16 avr2
    Text: DAC7568 DAC8168 DAC8568 SBAS430C – JANUARY 2009 – REVISED FEBRUARY 2011 www.ti.com 12-/14-/16-Bit, Octal-Channel, Ultra-Low Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


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    DAC7568 DAC8168 DAC8568 SBAS430C 12-/14-/16-Bit, DAC7568, DAC8168, 12-Bit) DAC7568 DAC8168 DAC8568 TSSOP-16 avr2 PDF

    Untitled

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 SBAS430C – JANUARY 2009 – REVISED FEBRUARY 2011 www.ti.com 12-/14-/16-Bit, Octal-Channel, Ultra-Low Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


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    DAC7568 DAC8168 DAC8568 SBAS430C 12-/14-/16-Bit, DAC7568, DAC8168, DAC7568 12-Bit) PDF

    Untitled

    Abstract: No abstract text available
    Text: DAC7568 DAC8168 DAC8568 www.ti.com SBAS430D – JANUARY 2009 – REVISED MAY 2012 12-/14-/16-Bit, Octal-Channel, Ultralow Glitch, Voltage Output DIGITAL-TO-ANALOG CONVERTERS with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC7568, DAC8168, DAC8568


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    DAC7568 DAC8168 DAC8568 SBAS430D 12-/14-/16-Bit, DAC7568, DAC8168, DAC7568 12-Bit) PDF

    bootloader for 89c51cc01

    Abstract: 80C51 PLCC44 T89C51CC01 TQFP44 89C51CC01 T89C51CC
    Text: T89C51CC01 Enhanced 8-bit MCU with CAN controller and Flash 1. Description The T89C51CC01 is first member of the CANaryTM family of 8-bit microcontrollers dedicated to CAN network applications. While remaining fully compatible with the 80C51 it offers a superset of this standard microcontroller. In X2


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    T89C51CC01 T89C51CC01 80C51 T89C51CC01. 89C51CC01 TQFP44 PLCC44 CA-BGA64 bootloader for 89c51cc01 PLCC44 TQFP44 89C51CC01 T89C51CC PDF

    Untitled

    Abstract: No abstract text available
    Text: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum


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    RFF70N06 RFF70N06 0-025i2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    transistors 1UW

    Abstract: transistors 1UW 18 p06e
    Text: RFF60P06 21 H A R R 'S 25A+, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET Decem ber 1995 Features Package • 2 5 A t, 60V • TO-254AA r D S O N = 0 - 0 3 0 i 2 G A TE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


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    RFF60P06 O-254AA MIL-STD-750, MIL-S-19500, 100ms; 500ms; transistors 1UW transistors 1UW 18 p06e PDF

    transistors 1UW

    Abstract: No abstract text available
    Text: RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum


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    RFF60P06 RFF60P06 IL-STD-750, IL-S-19500, 100ms; 500ms; transistors 1UW PDF

    transistors 1UW 18

    Abstract: mosfet HRF3205 1AV Series
    Text: HRF3205, HRF3205L, HRF3205S HARRIS S E M I C O N D U C T O R 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs January 1998 Features Description • 1 00A Note 1 , 55V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    HRF3205, HRF3205L, HRF3205S 1-800-4-HARRIS transistors 1UW 18 mosfet HRF3205 1AV Series PDF

    AN7254

    Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
    Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited


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    RFP50N05 RFG50N05 0-022O 11e-12 91e-3TRS1 26e-3 07e-6 12e-9 AN7254 RF650N06 RFP50N06 AN-7254 mosfat 24v mosfat RFP70N06 34069 PDF

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


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    RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA PDF

    DS 25AT

    Abstract: No abstract text available
    Text: RFF70N06 P HHARRIS W S E M I C O N D U C T O R 25At, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET D e ce m b e r 1995 Features Package • 25A+, 60V JE D EC TO -254A A • rDS ON = 0.025i2 GATE • Temperature Compensating PSPICE Model


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    RFF70N06 -254A 025i2 DS 25AT PDF