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    TRANSISTORS 5287 Search Results

    TRANSISTORS 5287 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 5287 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Half BRIDGE driver for bjt

    Abstract: No abstract text available
    Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■


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    PDF L6520 L6521 L6521TR L6520TR Half BRIDGE driver for bjt

    L6521

    Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC
    Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■


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    PDF L6520 L6521 L6520TR L6521TR L6521 L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC

    l6520

    Abstract: L6521 SELF OSCILLATING HALF BRIDGE DRIVER IC hsd 965 Ignition Transformer ELECTRONIC ballast choke details instant on BALLAST CONTROL IC 16998 bjt half bridge driver
    Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Preliminary data Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation


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    PDF L6520 L6521 L6520TR L6521TR l6520 L6521 SELF OSCILLATING HALF BRIDGE DRIVER IC hsd 965 Ignition Transformer ELECTRONIC ballast choke details instant on BALLAST CONTROL IC 16998 bjt half bridge driver

    BROWN BOVERI guanella

    Abstract: transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent
    Text: RF APPLICATION NOTE: PUSH-PULL CIRCUITS and WIDEBAND TRANSFORMERS Push-Pull Transistors Semelab plc produces a wide range of push-pull MOSFETs and this application note is intended as a guide to some circuit design principles which are particularly appropriate when using these


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    PDF 0-89000679-7X ARRL1990; BROWN BOVERI guanella transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent

    smd TRANSISTOR sot-23 a7

    Abstract: 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886
    Text: Version 1.0 , September 2004 Application Note AN-CoolMOS-09 200W SMPS Demonstration Board II Author: Marko Scherf, Wolfgang Frank Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board II


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    PDF AN-CoolMOS-09 TDA16888, 1X20/90I smd TRANSISTOR sot-23 a7 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886

    STR 6750

    Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
    Text: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board


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    PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout

    SMD MOSFET DRIVE 4450 8 PIN

    Abstract: A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
    Text: Version 1.2 , November 2001 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion        200W SMPS Demonstration Board


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    PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc

    d 5287 transistor

    Abstract: GRM32ER71H106 8ph ZENER
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    PDF SC4524 SC4524 d 5287 transistor GRM32ER71H106 8ph ZENER

    GRM32ER71H106

    Abstract: transistor c 5287 d 5287 transistor ipc-SM-782 GRM32ER71H106K SC452 a7ap
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    PDF SC4524 SC4524 IPC-SM-782A, GRM32ER71H106 transistor c 5287 d 5287 transistor ipc-SM-782 GRM32ER71H106K SC452 a7ap

    transistor c 5287

    Abstract: d 5287 transistor 2A diode H C 5287 equivalent GRM32ER71H106K TRANSISTOR 2AW GRM32ER71H106 UAA2
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    PDF SC4524 SC4524 transistor c 5287 d 5287 transistor 2A diode H C 5287 equivalent GRM32ER71H106K TRANSISTOR 2AW GRM32ER71H106 UAA2

    GRM32ER71H106K

    Abstract: d 5287 transistor 1N4148 20BQ030 SC4524 SC4524SETRT transistor A7a
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    PDF SC4524 SC4524 IPC-SM-782A, GRM32ER71H106K d 5287 transistor 1N4148 20BQ030 SC4524SETRT transistor A7a

    1n813 fairchild

    Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
    Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei


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    PDF BR-BR-0034-58 1n813 fairchild 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    ZN 3055 transistor

    Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
    Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K


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    PDF AI203 OT-32, O-126) O-220 O-220, ZN 3055 transistor Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt

    MOTOROLA wideband hybrid amplifiers

    Abstract: MWA5157 100C
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MWA5157 W id e b a n d H y b r id A m p lif ie r . . . three stage am plifier d e sign e d for broadband linear applications up to 900 MHz. • G ain 24 dB Typical • Co m plete G ain Block; R equires No External Com ponents


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    PDF MWA5157 MWA5157 MOTOROLA wideband hybrid amplifiers 100C

    tl494 dc to ac inverter

    Abstract: TC426CPA d 5287 transistor DS0026 power mosfet driver MOSFET DRIVER ic pin-8 tl494 dc to ac converter ic tl494 mosfet
    Text: ¡eluom Semiconductor, Inc. TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output


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    PDF TC426 TC427 TC428 1000pF) 30nsec tl494 dc to ac inverter TC426CPA d 5287 transistor DS0026 power mosfet driver MOSFET DRIVER ic pin-8 tl494 dc to ac converter ic tl494 mosfet

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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