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    TRANSISTORS C1815 Search Results

    TRANSISTORS C1815 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS C1815 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c1815 transistor

    Abstract: c1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


    Original     		PDF C1815 100mA, 30MHz c1815 transistor c1815 gr

    C1815 GR

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


    Original     		PDF C1815 100mA, 30MHz C1815 GR

    c1815 gr

    Abstract: Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage


    Original     		PDF C1815 100mA, 30MHz c1815 gr Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr

    transistor C1815

    Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 M100uA, 100mA, 30MHz transistor C1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 100mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 100mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 100mA, 30MHz

    C1815HF

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 C1815 C1815 100uA, 30MHz C1815HF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


    Original     		PDF C1815

    C1815 GR

    Abstract: OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors
    Text: C1815 NPN Plastic-Encapsulate Transistors P b Lead Pb -Free TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF C1815 O--92 100mA, 30MHz 23-Nov-06 C1815 GR OF C1815 GR c1815 c1815 npn C1815 y C1815 TO92 C1815 equivalent ic c1815 transistor C1815 C1815 transistors

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60


    Original     		PDF C1815 100mA, 30MHz

    A1015 sot-23

    Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 A1015 C1815 -10mA 30MHz A1015 sot-23 A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015

    C1815 transistors

    Abstract: transistors c1815 C1815
    Text: C1815 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 ƔFEATURES . Power Dissipation PCM: 0.4 W Ta = 25 к . Collector Current 1 ICM: 0.15 A 2 . Collector-Base Voltage


    Original     		PDF C1815 01-Jun-2002 C1815 transistors transistors c1815 C1815

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 A1015 C1815 -10mA 30MHz

    "device marking" HF

    Abstract: C1815 C1815LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A


    Original     		PDF OT-23 C1815LT1 OT--23 C1815LT1 037TPY 950TPY 550REF 022REF "device marking" HF C1815

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TO—92 TRANSISTOR（ NPN ） 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60


    Original     		PDF C1815 30MHz 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage


    Original     		PDF OT-23 C1815LT1 OT-23 30MHz C1815LT1

    C1815 NPN Transistor

    Abstract: C1815 TO92
    Text: TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF C1815 100mA, 30MHz C1815 NPN Transistor C1815 TO92

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range


    Original     		PDF OT-23 C1815LT1 OT-23 30MHz C1815LT1

    c1815 gr h

    Abstract: C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR
    Text: C1815 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.15 A Collector-base voltage V (BR)CBO :60 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF C1815 c1815 gr h C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) z Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA


    Original     		PDF OT-23 A1015 -150mA -150mA C1815 -10mA 30MHz

    C1815L

    Abstract: AV1815LT1 C1815LT1 AV1815
    Text: @vic AV1815LT1 SOT-23 Plastic-Encapsulate Transistors AV1815LT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V BR CBO : 60


    Original     		PDF AV1815LT1 OT-23 OT--23 037TPY 950TPY 550REF 022REF C1815L AV1815LT1 C1815LT1 AV1815

    Transistor GR 1815

    Abstract: C 1815 transistor c1815 Transistor TO-92 C1815 1815 TRANSISTOR C1815 Y 5 l transistor NPN transistor 1815 NPN C1815 c1815 gr h c 1815
    Text: M CC TO-92 Plastic-Encapsulate Transistors C 1815 TRANSISTOR NPN FEATURES a cp Power dissipation TO-92 0.4W (Tamb=25°C) Pcm ; Collector current 1.EMITTER Ic m ; 2.COLLECTOR 0.15A Collector-base voltage V (B R )C B O : 60 V 3 . BASE Operating and storage junction temperature range


    OCR Scan     		PDF C1815 Transistor GR 1815 C 1815 transistor c1815 Transistor TO-92 C1815 1815 TRANSISTOR C1815 Y 5 l transistor NPN transistor 1815 NPN C1815 c1815 gr h c 1815

    C1815 GR

    Abstract: c1815 transistor C1815 GR 7 J transistor C1815 c1815 gr h c1815 transistor C1815 y C1815 gr 8 C1815 y OF C1815 GR
    Text: TO-92 Plastic-Encapsulate Transistors C 1815 TR A N SISTO R N PN F E A T U RES . Pow er dissipation TO-92 Pcm; (Tamb=25°C) C o llecto r current 1.EMITTER Icm: 2.COLLECTOR aSS 3 .BASE T 0 .4 W 0.15A C ollecto r-b ase voltage 60 V V(BR)CBO: O perating and storage ju n ctio n tem perature range


    OCR Scan     		PDF C1815 C1815 GR c1815 transistor C1815 GR 7 J transistor C1815 c1815 gr h transistor C1815 y C1815 gr 8 C1815 y OF C1815 GR