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    TRC 1003 Search Results

    TRC 1003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    100324FM/B Rochester Electronics 100324 - TTL to ECL Translator, 6 Func, Inverted Output, ECL Visit Rochester Electronics Buy
    100331/VYA Rochester Electronics LLC 100331 - 100K Series, Low Power Triple D-Type Flip-Flop - Dual marked (5962-9153601VYA) - SPACE-LEVEL LOGIC Visit Rochester Electronics LLC Buy
    100355QI Rochester Electronics LLC D Latch, 100K Series, 1-Func, Low Level Triggered, 4-Bit, Complementary Output, ECL, PQCC28, 0.450 X 0.450 INCH, PLASTIC, MO-047, LCC-28 Visit Rochester Electronics LLC Buy
    100353QI Rochester Electronics LLC D Flip-Flop, 100K Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, ECL, PQCC28, 0.450 X 0.450 INCH, PLASTIC, MO-047, LCC-28 Visit Rochester Electronics LLC Buy
    100371SC Rochester Electronics LLC Replacement for Fairchild part number 100371SC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    TRC 1003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DDR400

    Abstract: PC3200 NT5DS128M4CG-5T NT1GD72S4PC0FV-5T
    Text: NT1GD72S4PC0FV/NT2GD72S4NCOFV 1GB: 128M x 72 / 2GB: 256M x 72 Low Profile Registered DDR SDRAM DIMM 184pin Low Profile Registered DDR SDRAM DIMM Based on 128Mx4 DDR SDRAM C Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Registered DDR DIMM based on 90nm 512Mb Die C device


    Original     		PDF NT1GD72S4PC0FV/NT2GD72S4NCOFV 184pin 128Mx4 512Mb 128Mx4 NT5DS128M4CG-5T) DDR400 PC3200 NT5DS128M4CG-5T NT1GD72S4PC0FV-5T

    Untitled

    Abstract: No abstract text available
    Text: NT1GD72S4PC0FV/NT2GD72S4NCOFV 1GB: 128M x 72 / 2GB: 256M x 72 Low Profile Registered DDR SDRAM DIMM 184pin Low Profile Registered DDR SDRAM DIMM Based on 128Mx4 DDR SDRAM C Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Registered DDR DIMM based on 90nm 512Mb Die C device


    Original     		PDF NT1GD72S4PC0FV/NT2GD72S4NCOFV 184pin 128Mx4 512Mb 128Mx4 NT5DS128M4CG-5T)

    KM428C128

    Abstract: 428C128 256X8 CMOS RAM 428-C KM428C128-6
    Text: r PRELIMINARY v KM428C128 CMOS VIDEO RAM 1 28K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance - Speed Parameter RAM access tim e tRAc RAM access tim e (tcAc) RAM cycle tim e (tRc)


    OCR Scan     		PDF KM428C128 125ns 150ns 100ns 180ns 428C128 40-PIN KM428C128 256X8 CMOS RAM 428-C KM428C128-6

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1OOOA/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC KM416C1000A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1OOOA-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns


    OCR Scan     		PDF KM416C1OOOA/A-L/A-F KM416C1000A-6/A-L6/A-F6 110ns KM416C1OOOA-7/A-L7/A-F7 130ns KM416C1000A-8/A-L8/A-F8 150ns cycle/64ms cycle/128ms

    Untitled

    Abstract: No abstract text available
    Text: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6


    OCR Scan     		PDF KM416C1OOOA/A-L/A-F KM416C1000A/A-L/A-F KM416C1 DQ1-DQ16 42-LEAD 44-LEAD

    KM68B1003

    Abstract: No abstract text available
    Text: K M 64B 1003 \0 SAMSUNG ELECTRONICS 262,144 WORD X 4 Bit With ÜE APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1003 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. The KM64B1003 uses four common input


    OCR Scan     		PDF KM64B1003 576-bit 400mil 32-pin KM64B1003 KM68B1003

    HY5116400A

    Abstract: No abstract text available
    Text: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A 04711JOOl 43c12 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ

    hy534256s

    Abstract: pin diagram of ic 7493 HY534256 HY534256J circuit diagram of ic 7493 INTERNAL DIAGRAM OF IC 7493
    Text: HYUNDAI HY534256 Series SEMICONDUCTOR 256K X 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY534256 300mil 1AB03-30-APR93 HY534256S HY534256J pin diagram of ic 7493 HY534256J circuit diagram of ic 7493 INTERNAL DIAGRAM OF IC 7493

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400A HY51V17400A 1AD35-00-MA 4b750flà HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT

    hy5118160b

    Abstract: HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160
    Text: HY5118160B Series •HYUNDAI 1 M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynam ic RAM organized 1,048.576 x 16-bit. The HY5118160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160B 16-bit 16-bit. 4b75GÃ 00047b5 1AD54-10-MAY95 HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160

    HM401

    Abstract: BSC MML command
    Text: .uv ii y n Ai HY51V17400A Series 4M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400Ais the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400A HY51V17400Ais HY51V17400Ato 1AD35-00-MAY94 HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT HM401 BSC MML command

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HY514400B Series 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400B FEATURE00 1AC11-10-MAY95 HY514400BJ HY514400BLJ HY514400BSU

    0170R

    Abstract: MC-422000A36BJ-80 MC422000A36FJ70 MC-422000A36FJ-80 MC-422000A36FJ MC-422000A36BJ MC-422000A36FJ-70
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of


    OCR Scan     		PDF MC-422000A32, 422000A36 32-BIT, 36-BIT MC-422000A32 uPD424400 MC-422000A36 iPD424400) fiPD421000) MC-422000A36BJ, 0170R MC-422000A36BJ-80 MC422000A36FJ70 MC-422000A36FJ-80 MC-422000A36FJ MC-422000A36BJ MC-422000A36FJ-70

    Untitled

    Abstract: No abstract text available
    Text: 51C64L LOW POWER 64K X 1 CHMOS DYNAMIC RAM 51C64L-10 51C64L-12 Maximum Access Time ns 100 120 Maximum CHMOS Standby Current (mA) 0.05 0.05 • Low Power Data Retention ■ Fully TTL Compatible Inputs and Outputs — S tandby current, C HM O S — 50/*A (m ax.)


    OCR Scan     		PDF 51C64L 51C64L-10 51C64L-12 51C64L

    Z80 CPU PHYSICAL DIMENSIONS LCC

    Abstract: z8400a z80acpu TDA 120S Z80A CPU Z80A-CPU Zilog Z80A CPU TDA 2025
    Text: ZILOG INC DB dË | TTñUDMB DODflSMa 5 J~~ 9 9 8 4 0 4 3 Z I L O G INC 03E 0 8 2 4 2 Z8400 Military Z80 CPU Central Processing Unit 17; | ¿• U O y D ~r-W -n-oi Military Electrical Specification July 1985 FEATURES ■ The instruction set contains 158 instructions. The 78


    OCR Scan     		PDF Z8400 lfl4043 00Qfl2b3 40-PIN 44-PIN MIL-M-38510 Z8400CMJ Z8400ACMJ 40-pln 44-pln Z80 CPU PHYSICAL DIMENSIONS LCC z8400a z80acpu TDA 120S Z80A CPU Z80A-CPU Zilog Z80A CPU TDA 2025

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of


    OCR Scan     		PDF MC-422000A32, 422000A36 32-BIT, 36-BIT MC-422000A32 mPD424400) MC-422000A36 /xPD424400> fiPD421000) 1111rfi

    pw3sd

    Abstract: No abstract text available
    Text: - H Y U N D A HY514403B Series I 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,


    OCR Scan     		PDF HY514403B 1AC15-10-MAY95 HY514403BJ HY514403BLJ HY514403BSLJ pw3sd

    RAU27

    Abstract: rau2
    Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast


    OCR Scan     		PDF HY51V4264B 16-bit HY51V42648 400mil 40pin 4Q/44pin 08mWFLB_ 1AC30-10-MAY95 RAU27 rau2

    IC 1496 function

    Abstract: No abstract text available
    Text: IBM11S2360NN IBM11S2360NL 2M x 36 SODIMM Module Features • 7 2 -P in S m all O utline D ual-In -Lin e M e m o ry M o du le • Perform ance: I rac RAS Access Time All inputs & outputs a re T T L & C M O S com patible Fast P a g e M o d e a c c e ss cycle


    OCR Scan     		PDF IBM11S2360NN IBM11S2360NL 110ns 130ns 03H7118 MMDJ08DSU-00 IBM11S2360NL IC 1496 function

    rb414

    Abstract: KM44C1003
    Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003

    nec 424800

    Abstract: ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M -BIT D Y N A M IC R A M 512 K -W O R D B Y 8-BIT, F A S T P A G E M O D E D e s c rip tio n The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability


    OCR Scan     		PDF uPD42S4800 uPD424800 PD42S4800 28-pin /iPD42S4800-60, PD42S4800-70, PD42S4800-80, PD42S4800-10, VP15-207-2 nec 424800 ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX

    Untitled

    Abstract: No abstract text available
    Text: 51C65H HIGH PERFORMANCE STATIC COLUMN 64K X 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) • Static Column Mode Operation 51C65H-10 51C65H-12 100 120 55 65 ■ Fast “ Usable Speed’’ — C ontinuou s data rate ov e r 15 M H z


    OCR Scan     		PDF 51C65H 51C65H-10 51C65H-12 5lC65H

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .


    OCR Scan     		PDF KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203CW KMM5362203C2W KMM5362203C2W/C2WG

    uc07

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 4 4 0 0 A S e r ie s IM X 4-bit CM O S DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400A 1AC07-30-MAY94 HY514400AJ HY514400AU HY514400AT HY514400ALT HY514400AR uc07