RTW28-5R4C
Abstract: RTW50 RSEL-2002 RTW24-6R3C rtw24-13rh marking DIODE 2U 04 RSEL-2003W RSEL-2003 cold starting 100W150W
Text: RTW SERIES ks Unit type power supply 5 その他 医 療 計 測 F A 半導体 DENAN その他 Built to meet ph UL60950-1/ CSA C22.2 No.60950-1 その他 • Features コンピュータ pf-a hk-a hws EN60950-1/ EN50178 通 信 F A 半導体 ●W
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UL60950-1/
EN60950-1/
EN50178
EN61000-3-2
EN61000-4-2/3/4/5/6/8/11
0W/100W/150W
RTW28-5R4C
RTW50
RSEL-2002
RTW24-6R3C
rtw24-13rh
marking DIODE 2U 04
RSEL-2003W
RSEL-2003
cold starting
100W150W
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capacitor
Abstract: 275 v 593 BC varistor VARISTOR NTC 33 VARISTOR NTC 120 2322 156 226 smd capacitor capacitor mkt 344 CAPACITOR SMD ceramic capacitor 2222 655 2222
Text: Series A C D F K L M AC ACR 026/027 AHH-ELB 042/043 AHS-ELB 042/043 AHT 118 AHT-DIN 119 ALL-DIN 132/133 AMH-ELB 042/043 AML 138 AMR 024/025 AMS-ELB 042/043 AS 030/031 ASD 117 ASH 041/042/043 ASM 021 ASR 022/023 ATC 120 CAS CBB 0207 CHS CJS CLH 140 CLL 139
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10 16s capacitor smd
Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Text: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V
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BY206
Abstract: BLW78 1206 resistor MGP560 mica trimmer capacitor polyester capacitor BR 8 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.
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BLW78
BY206
BLW78
1206 resistor
MGP560
mica trimmer capacitor
polyester capacitor
BR 8 TRANSISTOR
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trimmer frequency set
Abstract: 3 pins trimmer capacitor pin configuration 3 pins trimmer capacitor
Text: 19-2472; Rev 0; 12/07 MAX4990 Evaluation Kit The MAX4990 evaluation kit EV kit provides a proven design to evaluate the MAX4990 high-voltage, ±15kV ESD-protected electroluminescent lamp driver. Alligator clip leads contact a wide variety of standard electroluminescent lamps.
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MAX4990
MAX4990ETD+
MAX4990EVKIT+
MAX4990
trimmer frequency set
3 pins trimmer capacitor pin configuration
3 pins trimmer capacitor
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BLW85
Abstract: gp550 SOt123 Package TP200
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and
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BLW85
BLW85
gp550
SOt123 Package
TP200
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PDF
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RTW Series
Abstract: RSEL-2003 RTW05-10RC RTW300W RS 262-337 20KVA TDK 300W rtw24-13rh
Text: 1 RTW SERIES Unit type power supply 5 DENAN Built to meet UL60950-1/ CSA C22.2 No.60950-1 • Features ● Worldwide-applicable input, super-slim type 1U/2U rack size ● Meeting the standard of the harmonics current limiter EN61000-3-2 ● Approved by safety standards (UL, C-UL, TÜV),
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Original
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UL609501/
EN609501/
EN50178
EN6100032
EN6100042/3/4/5/6/8/11
0W/100W/150W
RTW Series
RSEL-2003
RTW05-10RC
RTW300W
RS 262-337
20KVA
TDK 300W
rtw24-13rh
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AN028
Abstract: C103 C106 CC1050 CT52 18p06 Capacitor Tantal c104 capacitor 5n606
Text: User Manual Rev. 2.0 CC1050DK Development Kit SWRU053 Page 1 of 20 Table of contents INTRODUCTION . 3 EVALUATION BOARD . 4
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CC1050DK
SWRU053
AN028
C103
C106
CC1050
CT52
18p06
Capacitor Tantal
c104 capacitor
5n606
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BLF348
Abstract: MGP231 VHF transmitter circuit atc 17-33 RF push pull power amplifier vhf linear amplifier MGP232 BFL348
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF348 VHF linear push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor FEATURES BLF348 PIN CONFIGURATION • High power gain
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BLF348
OT262
BLF348
MGP231
VHF transmitter circuit
atc 17-33
RF push pull power amplifier
vhf linear amplifier
MGP232
BFL348
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E bbSS^l D 003^3^4 b37 BLW78 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB or B operated mobile, industrial and m ilitary transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to
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BLW78
bb53R3J
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3fc transistor
Abstract: TP2300
Text: 15E 0 § b3b?Z54 MOTOROLA SC MOTOROLA GDàf l^GÌ XSTRS/R T- 33- 0 | F SEMICONDUCTOR TECHNICAL DATA TP2300 The RF Line VHF Power Transistor The TP2300 is designed for use in 12.5 V V H F amplifiers operating under C la ss A, B or C conditions, its construction w hich incorporates go ld metallization and diffused ballast resistors
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TP2300
TP2300
33-JJ
3fc transistor
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BLW 82
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and
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bb53T31
BLW 82
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PDF
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Untitled
Abstract: No abstract text available
Text: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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BLF348
OT262
bbS3831
UCB237
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PDF
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58W SOT
Abstract: BLW85 ZL18
Text: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and
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bbS3T31
BLW85
7Z77540
7Z77541
58W SOT
BLW85
ZL18
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431202036640 choke
Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and
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BLW85
QQb3357
431202036640 choke
CEF 83 A 3
BLW85
ZL18
blw85 transistor test circuit
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transistor c32
Abstract: TRANSISTOR CATALOGUE itt 2222 BLF348 Philips 809 08003 ITT 2222 A IEC134
Text: b b5 3 ^ 31 Philips S em iconductors 0030055 T 2 7 I B APX Product specification VHF linear push-pull power MOS transistor BLF348 N AMER PHILIPS/DISCRETE t'ÎE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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OT262
BLF348
MSB008
transistor c32
TRANSISTOR CATALOGUE
itt 2222
BLF348
Philips 809 08003
ITT 2222 A
IEC134
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2222 031 capacitor philips
Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
Text: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF348
711005b
2222 031 capacitor philips
TRANSISTOR 43IL
271 Ceramic Disc Capacitors
BLF348
015 capacitor philips
2222 032
capacitor MKT Philips
VCB228
Philips 2222 capacitor
2222 035 electrolytic capacitor
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW76
7Z78092
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transistor tt 2222
Abstract: smd 809 x transistor transistor SMD S33
Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
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0DSfl737
BLT50
OT223
bbS3R31
0DS87M3
transistor tt 2222
smd 809 x transistor
transistor SMD S33
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BLW 95
Abstract: No abstract text available
Text: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is
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Philips polystyrene capacitors
Abstract: wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D
Text: bSE D B 7110fl2b QDb32b3 T3L H P H I N BLW76 PHILIPS IN T E R N A T I O N A L y v H.F./V.H.F. POW ER T R A N SIST O R N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW76
7z77457
Philips polystyrene capacitors
wf vqe 13 E
WF VQE 13
WF VQE 23 E
WF VQE 14 A6
WF VQE 21 e ad
transistors ai 757
wf vqe 21 f ad
WF VQE 22 d
WF vqe 13 D
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smd transistor e7
Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls
Text: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see
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bbS3S31
BLT50
OT223
OT223
MEA222
UBtM51
UEA223
smd transistor e7
smd transistor JE
blt50
smd transistor JE 45
smd 809 x transistor
transistor 2222
GC smd transistor
UHF TRANSISTOR
GP 809
max 809 ls
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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