Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRW MICROWAVE Search Results

    TRW MICROWAVE Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy

    TRW MICROWAVE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    trw rf

    Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W


    Original     		PDF UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    TPV 3100

    Abstract: TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D AN1034 Freescale Semiconductor, Inc. Three Balun Designs for PushĆPull Amplifiers Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the


    Original     		PDF AN1034/D AN1034 TPV 3100 TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG

    TPV 3100

    Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
    Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must


    Original     		PDF AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission

    Untitled

    Abstract: No abstract text available
    Text: Hardware Users Guide 2 Elizabeth Drive • Chelmsford, MA 01824 978-250-3343 tel • 978-250-3373 fax • adc@hittite.com www.hittite.com Hittite Microwave Corporation Proprietary 140-00036-00 CP110709 rev A Hardware Users Guide for EKIT01-HMCAD15XX – High Speed, Low Power ADC Evaluation Kit


    Original     		PDF CP110709 EKIT01-HMCAD15XX Hittit-00

    MAF C22

    Abstract: No abstract text available
    Text: Hardware Users Guide 2 Elizabeth Drive • Chelmsford, MA 01824 978-250-3343 tel • 978-250-3373 fax • adc@hittite.com www.hittite.com Hittite Microwave Corporation Proprietary 140-00039-00 CP110709 rev A Hardware Users Guide for EKIT01-HMCAD110X – High Speed, Low Power ADC Evaluation Kit


    Original     		PDF CP110709 EKIT01-HMCAD110X Hittit-00 MAF C22

    2N5596

    Abstract: motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1033/D SEMICONDUCTOR APPLICATION NOTE AN1033 Match Impedances in Microwave Amplifiers and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.


    Original     		PDF AN1033/D AN1033 2N5596 motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors

    2N5596

    Abstract: motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
    Text: Order this document by AN1033/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1033 MATCH IMPEDANCES IN MICROWAVE AMPLIFIERS and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.


    Original     		PDF AN1033/D AN1033 2N5596 motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors

    QUALCOMM MSM

    Abstract: TA0003 10MHz 10dBm oscillator gilbert
    Text: TA0003  TA0003 HBT Technology Adds Power to CDMA Chip Set          Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major


    Original     		PDF TA0003 RF9907 -45dB 10MHz 175MHz. QUALCOMM MSM TA0003 10MHz 10dBm oscillator gilbert

    encoder switch

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MV1449 PRELIMINARY INFORMATION DS3164 2.2 MV1449 PCM HDB3 ENCODER/DECODER The MV1449, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will


    Original     		PDF MV1449 DS3164 MV1449, 048Mbit MV1449 448Mbit. encoder switch

    TA0003

    Abstract: interleaver QUALCOMM MSM 2
    Text: TA0003  TA0003 HBT Technology Adds Power to CDMA Chip Set          Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major


    Original     		PDF TA0003 RF9908 TA0003 interleaver QUALCOMM MSM 2

    Untitled

    Abstract: No abstract text available
    Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MV1449 PRELIMINARY INFORMATION


    Original     		PDF MV1449 DS3164 MV1449, 048Mbit MV1449 448Mbit.

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW
    Text: DE I RF Devices Division ôfl55GE4 0D035fl7 1 TRW Electronic Components Group 8825024 T R W ELEK CMPNT, R F 89D 03587 D TRW2307 Microwave Power Transistor • * • • • C o m m o n B a se G o ld M etalized H erm etic 1 to 3 G H z “T X ” Screenabie


    OCR Scan     		PDF fl55G24 TRW2307 50j/F, TRW2304 50fjF, trw RF POWER TRANSISTOR trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    TRW2001

    Abstract: TRW2003 trw 2015 TRW2020 trw 2001 TRW201 TRW2010 TRW MICROWAVE trw rf transistors TRW2005
    Text: M OTORCLA SC XSTRS/R F 12E D | t>Bt75Sll Ü0ÖÖ372 0 | T MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1 to 2.3 GHz frequency range.


    OCR Scan     		PDF Bt75Sl TRW2000 171eC TRW2003 TRW2005 TRW2010 TRW2001 trw 2015 TRW2020 trw 2001 TRW201 TRW MICROWAVE trw rf transistors

    TRW63601

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 12E D | b3b725M 0000451 T -'b 'b -V l T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW63601 The RF Line M ic ro w a v e P o w e r O s c illa to r T ra n s is to r MICROWAVE POWER OSCILLATOR TRANSISTOR . designed for use as power oscillators at frequencies to 3.5 GHz with guaranteed


    OCR Scan     		PDF b3b725M TRW63601 TRW63601

    TRW52602

    Abstract: TRW 52602 TRW52102 52602 A 3121 IC trw rf transistors 1147 x motorola
    Text: MOTOROL A SC XSTRS/R F 1EE D | b3b?aS4 GÜfl f lBTS 1 | T~ 3 V MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T RW 52102 Se rie s The RF Line Microwave Linear Power Transistors . designed primarily for wideband, large-signal output and driver amplifier stages in


    OCR Scan     		PDF

    milstar

    Abstract: Sage Laboratories Phase Shifters Raytheon Company GPS TPS-159 Harris microwave antenna MSR-21 rockwell gps Rotary Joints agena EF-111A
    Text: Sage Laboratories.the “Reliability First” company Since 1955, we have devoted our resources to providing cus­ tomers with a broad spectrum of quality RF and microwave components from DC to 60 GHz. Recognized throughout the industry for quality and reliability, state of the art engineering,


    OCR Scan     		PDF FED-STD-209 milstar Sage Laboratories Phase Shifters Raytheon Company GPS TPS-159 Harris microwave antenna MSR-21 rockwell gps Rotary Joints agena EF-111A

    GP131

    Abstract: 13F-1 MRW2015
    Text: MOTOROLA SC XSTRS/R F MbE D • b 3 b 7 2 5 4 O O lS O fll T-: MOTOROLA ■ SEMICONDUCTOR 7 ■ flOTb 0 1 a TECHNICAL DATA MRW2000 Series The RF Line M icrow ave Pow er Transisto rs 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS . . . designed p rim arily fo r large-signal output and d rive r am p lifier stag es in th e 1 to


    OCR Scan     		PDF MRW2000 24GHz GP131 13F-1 MRW2015

    TRW Microwave Detector

    Abstract: TRW MICROWAVE
    Text: APH239C K-Band Power HEMT Amplifier GaAs Telecom Products Features • RF frequency: 37 to 43 GHz • Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 16 dB • Built-in power detector Self-biased first stage • Unconditionally stable


    OCR Scan     		PDF APH239C APH239C 4730x1440 E2/5042, 9701455-S-J1 9701455-1018-SJ1 TRW Microwave Detector TRW MICROWAVE

    HEMT Amplifier

    Abstract: TRW MICROWAVE HEMT
    Text: APH238C K-Band Power HEMT Amplifier _ GaAs Telecom Products Features • RF frequency: 23 to 32 GHz Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 14 dB • Unconditionally stable • Compact size


    OCR Scan     		PDF APH238C APH238C 3280X1670 E2/5042, 9701455-S-J1 HEMT Amplifier TRW MICROWAVE HEMT

    8542A

    Abstract: MIL-SID-810
    Text: M/A-COM’s Control Components Division has been a leading manufacturer of microwave components for nearly three decades. Our commitment to quality is evident in every product and service we provide. Our engineering staff enjoys worldwide recognition as leaders in


    OCR Scan     		PDF

    TRW mmic

    Abstract: SA043 Ceramic Resonator GHz OXB104C 9701455-S-J1 9G012
    Text: OXB104C HBTVCO G aAs Telecom Products Features • RF tuning range; 17 to 20 GHz • Output power: 6 dBm • Self bias: 5V/102 mA • Phase noise: 109 dBc/Hz at 1 MHz offset Description and Applications 3601240.053.SA043 The OXB104C is a monolithic, HBT voltage-controlled oscillator designed for commercial digital


    OCR Scan     		PDF OXB104C V/102 SA043 OXB104C 9G01240 9701455-S-J1 TRW mmic SA043 Ceramic Resonator GHz 9701455-S-J1 9G012