TRW RF POWER TRANSISTORS Search Results

TRW RF POWER TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRW RF POWER TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
trw rf Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130 Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W	Original	UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130	PDF
TPV 3100 Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must	Original	AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission	PDF
trw RF POWER TRANSISTOR Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors Text: TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key	Original	TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors	PDF
TPV 3100 Abstract: TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D AN1034 Freescale Semiconductor, Inc. Three Balun Designs for PushĆPull Amplifiers Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the	Original	AN1034/D AN1034 TPV 3100 TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG	PDF
trw rf transistor Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR Text: TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key	Original	TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR	PDF
BD291 Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22	Original	DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035	PDF
AN5337 ca3028 Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22 Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The	Original	CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22	PDF
RF2131 Abstract: TA0013 trw rf transistor HBT transistor Text: TA0013 TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.	Original	TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor	PDF
trw rf transistor Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR Text: TA0013 TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier operated applications, the power-added or total efficiency is extremely important. Sixty percent total efficiency for a two-stage, 25dB gain AMPS/ETACS	Original	TA0013 RF2131: RF2131 Bm/30kHz, trw rf transistor TA0013 trw RF POWER TRANSISTOR	PDF
2N5109 motorola Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.	Original	AN1024/D AN1024 2N5109 motorola 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator	PDF
w54 transistor Abstract: TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor Text: TA0014 TA0014 Amp RF2155: High Efficiency HBT Low Voltage Programmable Gain Power RF Micro Devices introduces a new power amplifier with digital gain control for low voltage applications. The power amplifier operates up to 1GHz and delivers	Original	TA0014 RF2155: 900MHz 400MHz w54 transistor TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor	PDF
RF2108 Abstract: cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011 Text: TA0011 TA0011 RF2108: A Linear, High Efficiency, HBT, CDMA Power Amplifier RF Micro Devices introduces a new linear power amplifier for CDMA applications based on their HBT Heterojunction Bipolar Transistor technology. This power	Original	TA0011 RF2108: 29dBm 16-lead RF2108 27dBm cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011	PDF
vhf antenna mtbf Abstract: RF2115 w54* transistor RF2155 TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR Text: TA0014 TA0014 Amp RF2155: High Efficiency HBT Low Voltage Programmable Gain Power RF Micro Devices introduces a new power amplifier with digital gain control for low voltage applications. The power amplifier operates up to 1GHz and delivers	Original	TA0014 RF2155: 900MHz 400MHz RF2155 vhf antenna mtbf RF2115 w54* transistor TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR	PDF
QUALCOMM MSM Abstract: TA0003 10MHz 10dBm oscillator gilbert Text: TA0003 TA0003 HBT Technology Adds Power to CDMA Chip Set Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major	Original	TA0003 RF9907 -45dB 10MHz 175MHz. QUALCOMM MSM TA0003 10MHz 10dBm oscillator gilbert	PDF

TPV3100 Abstract: TPV364 TP9380 244c-01 TP9383 TPV-3100 TPV-595A TPV3250B TPV5055B TPV385 Text: RI CHARDS ON ELECTRONICS " T -i. ijw .m ,r\| n n - 2>\|^Ol u. •.v 14E DI 7734ÖC\|ä Q0G0Sfl2 ^ - - 7— dH T h r* t iMrr i RF Transistors tor Broadcast Applications Motorola/TRW 88-108 MHz, FM Broadcast Band Device Pout Output PowerWatts Pm Input Power	OCR Scan	TP9380 TP9383 TP9390 TPV394A TPV364 TPV385 TPV375 TPV387 TPV376 TPV3100 TPV3100 244c-01 TPV-3100 TPV-595A TPV3250B TPV5055B	PDF
TRW2001 Abstract: TRW2003 trw 2015 TRW2020 trw 2001 TRW201 TRW2010 TRW MICROWAVE trw rf transistors TRW2005 Text: M OTORCLA SC XSTRS/R F 12E D \| t>Bt75Sll Ü0ÖÖ372 0 \| T MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1 to 2.3 GHz frequency range.	OCR Scan	Bt75Sl TRW2000 171eC TRW2003 TRW2005 TRW2010 TRW2001 trw 2015 TRW2020 trw 2001 TRW201 TRW MICROWAVE trw rf transistors	PDF
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan		PDF
MRA0610 Abstract: MRA0610-40A MRA0610-18A MRA0610-3 MRA0610-9 trw rf semiconductors Text: MRA0610-3, MRA0610-9, MRA0610-18A, MRA0610-40A MIC roAMP P-Band Class C Power Transistors • • • • • • • 3 to 40 Watts Broadband 600-1000 MHz Internally Compensated* Gold Metalized Diffused Ballast Resistors MTTF Data Common Base M R A .25 Electrical C h a ra cte ristics fT,	OCR Scan	mra0610-9, mra0610-18a, MRA0610-3 MRA0610-9 10-18A MRA0610-40A mra0610-3, mra061018a, mra061040a MRA0610 MRA0610-40A MRA0610-18A trw rf semiconductors	PDF
TDC1014 Abstract: TDC1046 Tdc1016 trw TIDC1014 trw resistor TDC1016 1016B7C 1016B7 capacitor 220 microfarad R20 marking Text: TDC1014 Use T D C 10 4 6 for N e w Designs Monolithic Video A/D Converter Features 6-Bit, 25M SPS • 6-Bit Resolution • 1/4 LSB Linearity The TRW TDC1014 is a 25 MegaSample Per Second MSPSI full- parallel (flash analog-to-digital converter, capable of	OCR Scan	TIDC1014 TDC1046 25MSPS TDC1014 12MHz Tdc1016 trw TIDC1014 trw resistor TDC1016 1016B7C 1016B7 capacitor 220 microfarad R20 marking	PDF
TRW52602 Abstract: TRW 52602 TRW52102 52602 A 3121 IC trw rf transistors 1147 x motorola Text: MOTOROL A SC XSTRS/R F 1EE D \| b3b?aS4 GÜfl f lBTS 1 \| T~ 3 V MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T RW 52102 Se rie s The RF Line Microwave Linear Power Transistors . designed primarily for wideband, large-signal output and driver amplifier stages in	OCR Scan		PDF
GP131 Abstract: 13F-1 MRW2015 Text: MOTOROLA SC XSTRS/R F MbE D • b 3 b 7 2 5 4 O O lS O fll T-: MOTOROLA ■ SEMICONDUCTOR 7 ■ flOTb 0 1 a TECHNICAL DATA MRW2000 Series The RF Line M icrow ave Pow er Transisto rs 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS . . . designed p rim arily fo r large-signal output and d rive r am p lifier stag es in th e 1 to	OCR Scan	MRW2000 24GHz GP131 13F-1 MRW2015	PDF
1016B7 Abstract: 1016B7C 10 microfarad 50v capacitor TDC1016B7AX 1 microfarad tantalum capacitor Text: TRVw TDC1016 Video Speed D/A Converter Features 10-Bit, 2 0 M s p s • 20Msps Conversion Rate The TDC1016 is a bipolar monolithic digital-to-analog • 8, 9, Or 10-Bit Linearity • Voltage Output, No Amplifier Required converter which can convert digital data into an analog	OCR Scan	TDC1016 10-Bit, TDC1016 20Msps 10-bit 1016B7 1016B7C 10 microfarad 50v capacitor TDC1016B7AX 1 microfarad tantalum capacitor	PDF
TRANSISTOR ww1 Abstract: 2U72 marking code ww1 ims g171 0171N6C RS-170 impedance match Diode marking WW1 diode ww1 77 TDC4611 LM1201 Text: TMC0171, TMC0176 T R m w Color Palette with Triple 6-Bit DAC The TMC0171 and TMC0176 are triple 6-bit video DACs Features with 256 x 18 RAM look-up tables and microprocessor interfaces. The devices were designed specifically for • Pixel Rates Of 0 to 80M Hz	OCR Scan	TMC0171, TMC0176 TMC0171 TMC0176 RS-170, 0176R2C4 TRANSISTOR ww1 2U72 marking code ww1 ims g171 0171N6C RS-170 impedance match Diode marking WW1 diode ww1 77 TDC4611 LM1201	PDF
TDC1016 Abstract: 1016B7 yuma capacitor, 22 microfarad 50v Tdc1016 trw capacitor 220 microfarad R20 marking 1N4001 HA2539 ECL2516 Text: TDC1016 Video Speed D/A Converter 10-Bit, 20Msps l A Ü Features • 20Msps Conversion Rate The TDC1016 is a bipolar monolithic digital-to-analog converter which can convert digital data into an analog voltage at rates up to 20Msps Megasamples Per Second . The device includes an input data register and	OCR Scan	TDC1016 10-Bit, 20Msps TDC1016 10-bit 1016B7 yuma capacitor, 22 microfarad 50v Tdc1016 trw capacitor 220 microfarad R20 marking 1N4001 HA2539 ECL2516	PDF

TRW RF POWER TRANSISTORS Search Results

TRW RF POWER TRANSISTORS Result Highlights (5)

TRW RF POWER TRANSISTORS Datasheets Context Search

trw rf

TPV 3100

trw RF POWER TRANSISTOR

TPV 3100

trw rf transistor

BD291

AN5337 ca3028

RF2131

trw rf transistor

2N5109 motorola

w54 transistor

RF2108

vhf antenna mtbf

QUALCOMM MSM

TPV3100

TRW2001

trw RF POWER TRANSISTOR

MRA0610

TDC1014

TRW52602

GP131

1016B7

TRANSISTOR ww1

TDC1016