TS-906

Contextual Info: TS906C2 20A ( 200V / 20A ) Outline drawings, mm 4.5 ±0.2 3.0 ±0.3 9.3 ±0.5 1.32 1.5 Max 10 +0.5 0.9 ±0.3 LOW LOSS SUPER HIGH SPEED RECTIFIER +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features Surface-mount device Low VF

TS906C2

Abstract: s53r
Contextual Info: TS906C2 2oa • Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features • s s & a Surface m o u n t device. • A£V k Low V r • X -fy * ic & l' Connection Diagram Super high speed sw itch in g . • 7 V —* - - a i f * H4 High reliability by planer design

Contextual Info: TS906C2 20A ( 200V / 20A ) Outline drawings, mm 4.5 ±0.2 9.3 ±0.5 1.32 3.0 ±0.3 1.5 Max 10 +0.5 0.9 ±0.3 LOW LOSS SUPER HIGH SPEED RECTIFIER +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features Surface-mount device Low VF

a293

Abstract: RE100-100 1030AE
Contextual Info: TS906C2 2 oai g±'J M'M&'fj'—Y • £ ffl2 ‘+>£ : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER ■ 4 M : Features Surface m o u n t device. •ftV K Low V i’ Connection Diagram Super high speed sw itchin g. • z ? is - - — t z i s a i t *H 4

TS906C2R-TE24R

Abstract: ts906c
Contextual Info: http://www.fujisemi.com TS906C2R-TE24R FUJI Diode Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*

TS906C2

Contextual Info: TS906C2 20A ( 200V / 20A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 LOW LOSS SUPER HIGH SPEED RECTIFIER +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features Surface-mount device Low VF

ts906c

Contextual Info: http://www.fujisemi.com TS906C3R FUJI Diode Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*

Contextual Info: TS906C2 2 oa Y ’ O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER 132 1 n % ro I - 3 • oaT 2 .7 : Features JEDEC • jSJ^iicBn EIAJ Surface m ou nt device. •A £ vk m w m & rn Low V r C o n n e c tio n D ia g ra m Super high speed sw itchin g.

A293

Abstract: TS906C2
Contextual Info: TS906C2 2oa • W $ '+ 8 s : O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER : Features Surface m ount device. • <£Vk Lo w V r C onnection D iagram • X 4 -S ? - y y x t - v m t * C i * v,'> Super high speed sw itching. • 7ri' - T - & m iz J : ij6ftfStt

TS906C2

Contextual Info: TS906C2 20A ( 200V / 20A ) Outline drawings, mm 4.5 ±0.2 3.0 ±0.3 9.3 ±0.5 1.32 1.5 Max 10 +0.5 0.9 ±0.3 LOW LOSS SUPER HIGH SPEED RECTIFIER +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features Surface-mount device Low VF

TS906C2

Contextual Info: TS906C2 20A ( 200V / 20A ) Outline drawings, mm 4.5 ±0.2 3.0 ±0.3 9.3 ±0.5 1.32 1.5 Max 10 +0.5 0.9 ±0.3 LOW LOSS SUPER HIGH SPEED RECTIFIER +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features Surface-mount device Low VF

IDC 10ms

Abstract: TS906C2 ts906c a293
Contextual Info: TS906C2 2 oa Y ’ O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER 132 1 n % ro I - 3 • oaT 2.7 : Features JEDEC • jSJ^iicBn EIAJ Surface m ou nt device. •A £ vk m w m & rn Low V r C o n n e c tio n D ia g ra m Super high speed sw itchin g.

Contextual Info: TS906C2 20A I FAST RECOVERY RECTIFIER DIODE Outline Drawing • Features • Surface mount device • High voltage by mesa design • High reliability M Applications • High speed power switching I Maximum Ratings & Characteristics • Absolute Maximum Ratings

TS906C2

Contextual Info: TS906C2 20A • Outline Drawing f a s t r e c o v e r y r e c t i f i e r d io d e I Features • Surface mount device • High voltage by mesa design • High reliability I Applications • High speed power switching ■ Maximum Ratings & Characteristics

Contextual Info: Spec. No. DAT E DRAWN Feb.-27-‘08 CHECKED Feb.-27-‘08 CHECKED Feb.-27-‘08 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

Contextual Info: Fast Recovery Diodes Dual package Ratings and characteristics Type Maximum rating Vrrm lo * 1 Ifsm Thermal rating Tj and Tag Amps. °C Dimensions Characteristics Ta=25°C V fm Irrm *2 Max, Volts Max. mA trr *3 /us Rthj-c °C/W Grams Fig. No. Mass Volts Amps.

yg962s6

Abstract: ESAD95-04 MS906 220F ESAB92-02 KP923C2 KS923C2 TP901C2 TP901C3 TS902C2
Contextual Info: 整流ダイオード / Rectifier Diodes • 低損失超高速ダイオード Low-Loss Fast Recovery Diodes（LLD） デュアル 2 in one-package 形式 Device type KS923C2 KP923C2 TP901C2 TP901C3 ESAB92-02 YG901C2R YG901C3R TS902C2 TS902C3 TP902C2 TP902C3

esab34

Abstract: yg906
Contextual Info: FAST RECOVERY DIODES 200 -1000Volts 200 - 300VOLTS PACKAGE Part Number lo A 400-500 VOLTS ÜT nS Part Number 600-800 VOLTS lo (A) trr nS Part Number 1000 VOLTS lo (A) trr nS SG201-2 0.5 400 SC201-4 0.5 400 SC201-6 0.5 40Q SURFACE SC902-2 1 35 SC311-4 0.5

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

YG902C2

Abstract: TO-220F15 ESAB33-02CS ESAB34M-02C ESAB92-02 ESAB92M-02 ESAB92M-03 KP923C2 KS923C2 TP901C2
Contextual Info: Fast Recovery Diodes Dual package Ratings and characteristics Type M aximum rating rrm io -M-t Volts Am ps. V Ifsm Therm al rating Tj and Tstg Am ps. “C 200 5 Tc=103°C 5 (Tc=125°C) 50 50 TP901C2 200 5 (Tc=125°C) TP901C3 ESAB92-02 ESAB92M-02 300 5 (Tc=125°C)

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,