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    TSD 1196 Search Results

    TSD 1196 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    77311-196-04LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical Header, Through Hole, Single Row, 04 Positions, 2.54 mm Pitch. Visit Amphenol Communications Solutions
    10119678-315ALF Amphenol Communications Solutions Dubox® Board to Board connector, PCB Mounted Receptacle, Right Angle, Surface Mount, Single Row, 15 positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    10119695-003LF Amphenol Communications Solutions HPCE VERT REC 36P24S Visit Amphenol Communications Solutions

    TSD 1196 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY7C1062AV25

    Abstract: No abstract text available
    Text: CY7C1062AV25 512K x 32 Static RAM Features Functional Description • High speed The CY7C1062AV25 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip CE1, CE2 and CE3 LOW and forcing the Write Enable (WE)


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    CY7C1062AV25 CY7C1062AV25 I/O15) I/O16 I/O23 I/O24 I/O31, PDF

    CY7C1062AV25

    Abstract: No abstract text available
    Text: CY7C1062AV25 512K x 32 Static RAM Features Functional Description • High speed The CY7C1062AV25 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip CE1, CE2 and CE3 LOW and forcing the Write Enable (WE)


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    CY7C1062AV25 CY7C1062AV25 I/O15) I/O16 I/O23 I/O24 I/O31, PDF

    O16I

    Abstract: CY7C1012AV25
    Text: CY7C1012AV25 PRELIMINARY 512K x 24 Static RAM Features Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write enable input WE input is LOW. Data on the respective input/output (I/O) pins is then written into the location specified


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    CY7C1012AV25 CY7C1012AV25 O16I PDF

    CY7C1012AV25

    Abstract: O16I
    Text: CY7C1012AV25 PRELIMINARY 512K x 24 Static RAM Features Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write enable input WE input is LOW. Data on the respective input/output (I/O) pins is then written into the location specified


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    CY7C1012AV25 CY7C1012AV25 O16I PDF

    CY7C1061

    Abstract: CY7C1061AV25 CY7C1061AV25-8ZC CY7C1061AV25-8ZI
    Text: CY7C1061AV25 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).


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    CY7C1061AV25 I/O15) CY7C1061AV25 CY7C1061 CY7C1061AV25-8ZC CY7C1061AV25-8ZI PDF

    CY7C1062AV25

    Abstract: No abstract text available
    Text: CY7C1062AV25 PRELIMINARY 512K x 32 Static RAM Features the address pins A0 through A18 . If Byte Enable B (BB) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18). Likewise, BC and BD correspond with the I/O pins I/O16


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    CY7C1062AV25 I/O15) I/O16 I/O23 I/O24 I/O31, CY7C1062AV25 PDF

    CY7C1061AV25

    Abstract: CY7C1061AV25-8ZC CY7C1061AV25-8ZI CY7C1061A CY7C1061AV25-10BAI
    Text: CY7C1061AV25 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).


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    CY7C1061AV25 I/O15) CY7C1061AV25 CY7C1061AV25-8ZC CY7C1061AV25-8ZI CY7C1061A CY7C1061AV25-10BAI PDF

    Untitled

    Abstract: No abstract text available
    Text: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Functional Description Features • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C


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    CG5982AF CG5982AF CG5982AF; CY7C136 52-pin PDF

    CG5982AF

    Abstract: CY7C136
    Text: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Features Functional Description • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C


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    CG5982AF CG5982AF CG5982AF; CY7C136 52-pin CY7C136 PDF

    CG5982AF

    Abstract: CY7C136
    Text: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Features Functional Description • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C


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    CG5982AF CG5982AF CG5982AF; CY7C136 52-pin CY7C136 PDF

    tsd 1196

    Abstract: IS61LV3216
    Text: ISSI IS61LV3216 ISSI IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, and 17 ns • CMOS low power operation — 150 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 2.7V to 3.6V power supply


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    IS61LV3216 44-pin 400-mil IS61LV3216 SR1295LV3216 tsd 1196 PDF

    Untitled

    Abstract: No abstract text available
    Text: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 mΩ and 300 mΩ @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re


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    L9332 PowerSO-20 L9332 PDF

    L9332

    Abstract: MO-166 JESD97 L9332-DIE1 ecopack
    Text: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 mΩ and 300 mΩ @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re


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    L9332 PowerSO-20 L9332 MO-166 JESD97 L9332-DIE1 ecopack PDF

    Untitled

    Abstract: No abstract text available
    Text: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 mΩ and 300 mΩ @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re


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    L9332 PowerSO-20 L9332 PDF

    Untitled

    Abstract: No abstract text available
    Text: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 m and 300 m @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re


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    L9332 PowerSO-20 L9332 PDF

    Telefunken Phototransistor

    Abstract: TCST1230
    Text: TCST1230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face1–to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


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    TCST1230 11969the D-74025 12-Dec-97 Telefunken Phototransistor TCST1230 PDF

    Telefunken Phototransistor

    Abstract: TCST1230
    Text: TCST1230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face1–to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


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    TCST1230 11969the D-74025 17-Jun-96 Telefunken Phototransistor TCST1230 PDF

    TCST1230

    Abstract: No abstract text available
    Text: TCST1230 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


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    TCST1230 D-74025 TCST1230 PDF

    Telefunken Phototransistor

    Abstract: TCST1230
    Text: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


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    TCST1230 D-74025 Telefunken Phototransistor TCST1230 PDF

    Untitled

    Abstract: No abstract text available
    Text: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


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    TCST1230 D-74025 PDF

    Telefunken Phototransistor

    Abstract: TCST5123
    Text: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the


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    TCST5123 D-74025 17-Jun-96 Telefunken Phototransistor TCST5123 PDF

    Telefunken Phototransistor

    Abstract: TCST1230
    Text: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


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    TCST1230 D-74025 Telefunken Phototransistor TCST1230 PDF

    Telefunken Phototransistor

    Abstract: all phototransistor TCST5123
    Text: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


    Original
    TCST5123 D-74025 12-Dec-97 Telefunken Phototransistor all phototransistor TCST5123 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TCST5123 S e m i c o n d u c t o r s Transmissive Optical Sensor with Phototransistor Output Description T hese devices have a com pact construction w here the em itting-light sources and the detectors are located faceto-face on the sam e optical axis. T he operating


    OCR Scan
    TCST5123 CST5123 17-Jun-96 PDF