MTP20N10
Abstract: 1RF531
Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA
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OCR Scan
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2N67S5
2N6756
IRF130
IRF131
IRF132
IRF133
IRF530
1RF531
IRF532
IRF533
MTP20N10
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BC338 hie hre hfe
Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
Text: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92
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OCR Scan
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b501130
bS01130
T-03-01
BC338 hie hre hfe
BD371C-10
bc368 hie
BD370B-10
BD371D
BD371C
BF936
BF494
BF495
b055
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PDF
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NDS9933
Abstract: Transistor c 4138 LA 4138
Text: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.
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OCR Scan
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NDS9933
bSD113D
NDS9933
Transistor c 4138
LA 4138
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PDF
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d45hb
Abstract: 2N6124 mje230 D4SH11 f tip42c NJ 20 U1 W
Text: NATL SENICOND {DISCRETE} äfi d o 0.1 s o in o in s o in o in Gì < < so 0.5 2 in o in in in CO co co co 5 15 < < •=■ 3 7 S 5 15 < < 5 15 p < 0.5 o< co D (0 <o (0 2 r-' t-* 2 co co o e X 1.5 0.5 0.15 0.15 3 1.5 0.5 o in CM* 3 1.5 0.5 1.5 0.5 0.15 P 1.5
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)
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OCR Scan
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hSD113D
T-39-01
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PDF
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NPD8301
Abstract: J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935
Text: 1 This JFET Transistors NATL Material National áuá Semiconductor N-Channel JFETs Typ« No. Case Style VGS1-2 D rift G„ Gfs C|ss C ru BV R G ou CMRfl Vg» Vp Igss loss Gis GosCI-2 Iq H G 2 Process Pkg. Goss Idss •g Vos O iV /T PA) jim hos Oimho) (dB)
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OCR Scan
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tSD113D
2N5515
2N5516
2N5517
2N5518
9N5519
2N5520
2N5521
2N5522
2N5523
NPD8301
J406 dual
NPD8303
J406
2N3934
2N5561
2N3954-6
2N5045
2N5454
2N3935
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PDF
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IRF520CF
Abstract: No abstract text available
Text: IRF520CF By IRF620CF Its IRF720CF IRF820CF IRF630CF IRF730CF 1RFP140CF IRFP141CF IRF540CF Con PF Min Max Cm (PF) Min Max 15 600 400 100 B2 2.5 15 600 300 80 B3 1.44 1.5 15 500 10Q 40 64 0.25 2.4 1 15 400 100 40 Bfe 4 0.25 0.144 8 30 800 500 150 C1 2 4 0.25
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OCR Scan
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tSD113D
T-39-01
IRF520CF
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PDF
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1RFP140
Abstract: 1RFP140CF IRF540CF IRF520CF IRF830CF IRF630CF
Text: Typo NO. IRF620CF IRF720CF IRF820CF IRF630CF 9-22 IRF730CF IRF830CF 1RFP140CF IRFP141CF IRF540CF lD@ V TC= 2 5 X V o ss Min (A) • rD@ Tc = 1 0 0 T (A) VGS(th) (V) Min Id @ (mA) Max RoS(on) <«>@ Max <D (nC) Qfl Cl«, (A) Max Min <PF) M ax Co m Min (PF)
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OCR Scan
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IRF520CF
IRF620CF
IRF720CF
IRF820CF
IRFS30CF
IRF630CF
IRF730CF
IRF830CF
1RFP140CF
IRFP141CF
1RFP140
IRF540CF
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