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    TSM230 Price and Stock

    Taiwan Semiconductor TSM2305CX-RFG

    MOSFET P-CHANNEL 20V 3.2A SOT23
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    DigiKey TSM2305CX-RFG Cut Tape 103,381 1
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    TSM2305CX-RFG Digi-Reel 103,381 1
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    TSM2305CX-RFG Reel 99,000 3,000
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    Taiwan Semiconductor TSM2306CX-RFG

    MOSFET N-CHANNEL 30V 3.5A SOT23
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    DigiKey TSM2306CX-RFG Digi-Reel 63,314 1
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    TSM2306CX-RFG Cut Tape 63,314 1
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    TSM2306CX-RFG Reel 60,000 3,000
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    Taiwan Semiconductor TSM230N06CP-ROG

    MOSFET N-CHANNEL 60V 34A TO252
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    DigiKey TSM230N06CP-ROG Cut Tape 33,202 1
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    TSM230N06CP-ROG Digi-Reel 33,202 1
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    TSM230N06CP-ROG Reel 30,000 2,500
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    Taiwan Semiconductor TSM2302CX-RFG

    MOSFET N-CHANNEL 20V 3.9A SOT23
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    DigiKey TSM2302CX-RFG Digi-Reel 26,357 1
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    TSM2302CX-RFG Cut Tape 26,357 1
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    TSM2302CX-RFG Reel 24,000 3,000
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    Taiwan Semiconductor TSM2308CX-RFG

    MOSFET N-CHANNEL 60V 3A SOT23
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    DigiKey TSM2308CX-RFG Cut Tape 8,599 1
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    TSM2308CX-RFG Digi-Reel 8,599 1
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    TSM2308CX-RFG Reel 6,000 3,000
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    Find more TSM230 price and stock on Findchips.com

    TSM230 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2301 Taiwan Semiconductor 20v P-channel Enhancement Mode Mosfet Original PDF
    TSM2301ACX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 2.8A SOT23 Original PDF
    TSM2301B Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM2301B Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM2301BCXRF Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM2301BCXRF Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM2301BCX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 2.8A SOT23 Original PDF
    TSM2301CX Taiwan Semiconductor 20V P-Channel Enhancement Mode MOSFET Original PDF
    TSM2301CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 2.8A SOT23 Original PDF
    TSM2302 Taiwan Semiconductor 20v N-channel Enhancement Mode Mosfet Original PDF
    TSM2302CX Taiwan Semiconductor 20V N-Channel Enhancement Mode MOSFET Original PDF
    TSM2302CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 20V 3.9A SOT23 Original PDF
    TSM2303CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 1.3A SOT23 Original PDF
    TSM2305CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 3.2A SOT23 Original PDF
    TSM2306CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 3.5A SOT23 Original PDF
    TSM2307CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 3A SOT23 Original PDF
    TSM2308CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 60V 3A SOT23 Original PDF
    TSM2309CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 60V 3.1A SOT23 Original PDF
    TSM230N06CI C0G Taiwan Semiconductor Manufacturing Company MOSFET N-CH 60V 50A ITO220 Original PDF
    TSM230N06CP ROG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 60V 34A TO252 Original PDF

    TSM230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSM2307CX

    Abstract: TSM2307CXRFG TSM2307 MARKING PA TR SOT-23 A1 SOT-23 MOSFET P-CHANNEL
    Text: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 95 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2307 OT-23 TSM2307CX OT-23 TSM2307CXRFG TSM2307 MARKING PA TR SOT-23 A1 SOT-23 MOSFET P-CHANNEL

    A1 SOT-23 MOSFET P-CHANNEL

    Abstract: P-Channel MOSFET code 1A TSM2307CX TSM2307 p-channel mosfet c 103 mosfet P-Channel MOSFET code L 1A P-Channel SOT-23 Power MOSFET sot-23 P-Channel MOSFET
    Text: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 80 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2307 OT-23 TSM2307CX A1 SOT-23 MOSFET P-CHANNEL P-Channel MOSFET code 1A TSM2307 p-channel mosfet c 103 mosfet P-Channel MOSFET code L 1A P-Channel SOT-23 Power MOSFET sot-23 P-Channel MOSFET

    A1 SOT-23 MOSFET P-CHANNEL

    Abstract: p-channel mosfet MOSFET SOT-23 A1 p-channel mosfet TSM2301A
    Text: TSM2301A 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 ID (A) 130 @ VGS =-4.5V -2.8 190 @ VGS =-2.5V -2.0 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2301A OT-23 TSM2301ACX A1 SOT-23 MOSFET P-CHANNEL p-channel mosfet MOSFET SOT-23 A1 p-channel mosfet TSM2301A

    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX

    Untitled

    Abstract: No abstract text available
    Text: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2302 OT-23 TSM2302CX

    TSM2301CX

    Abstract: TSM2301 P-Channel MOSFET code 1A
    Text: TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 130 @ VGS = -4.5V -2.8 190 @ VGS = -2.5V -2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2301 OT-23 TSM2301CX TSM2301 P-Channel MOSFET code 1A

    mosfet marking Bc

    Abstract: No abstract text available
    Text: TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 ID (A) 180 @ VGS =-10V -1.3 300 @ VGS =-4.5V -1.1 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2303 OT-23 TSM2303CX mosfet marking Bc

    TSM2308

    Abstract: No abstract text available
    Text: TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 ID (A) 156 @ VGS = 10V 3 192 @ VGS = 4.5V 2.1 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2308 OT-23 TSM2308CX TSM2308

    TSM2302CX

    Abstract: TSM2302CX RF TSM2302 n-channel mosfet SOT-23 marking 6A SOT 23 MOSFET N SOT-23 MOSFET SOT-23
    Text: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2302 OT-23 TSM2302CX TSM2302CX RF TSM2302 n-channel mosfet SOT-23 marking 6A SOT 23 MOSFET N SOT-23 MOSFET SOT-23

    Untitled

    Abstract: No abstract text available
    Text: TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 ID (A) 52 @ VGS =-4.5V -3.2 71 @ VGS =-2.5V -2.7 108 @ VGS =-1.8V -2.0 Block Diagram Features ● Advance Trench Process Technology ●


    Original     		PDF TSM2305 OT-23 TSM2305CX

    Untitled

    Abstract: No abstract text available
    Text: TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 ID (A) 55 @ VGS =-4.5V -3.2 80 @ VGS =-2.5V -2.7 130 @ VGS =-1.8V -2.0 Block Diagram Features ● Advance Trench Process Technology ●


    Original     		PDF TSM2305 OT-23 TSM2305CX

    TSM2306

    Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX TSM2306 IDA57 n-channel mosfet transistor n-channel mosfet SOT-23

    TSM2302

    Abstract: TSM2302CX RF TSM2302CX ultra low igss pA mosfet
    Text: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2302 OT-23 TSM2302CX TSM2302 TSM2302CX RF ultra low igss pA mosfet

    Untitled

    Abstract: No abstract text available
    Text: TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(m) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 130 @ VGS = -4.5V -2.8 190 @ VGS = -2.5V -2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2301 OT-23 TSM2301CX

    TSM2301CX

    Abstract: sot-23 MARKING CODE GS 5 MOSFET P-channel SOT-23 dd 127 dd 127 d marking 8A sot-23 sot-23 P-Channel MOSFET sot-23 MARKING CODE GS MOSFET P channel SOT-23 TSM2301CX SOT-23 5 pins TSM2301
    Text: TSM2301 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = -20V RDS on , Vgs @ -4.5V, Ids @ -2.8A =130mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ Features  Advanced trench process technology  Excellent thermal and electrical capabilities


    Original     		PDF TSM2301 OT-23 TSM2301CX OT-23 TSM2301CX sot-23 MARKING CODE GS 5 MOSFET P-channel SOT-23 dd 127 dd 127 d marking 8A sot-23 sot-23 P-Channel MOSFET sot-23 MARKING CODE GS MOSFET P channel SOT-23 TSM2301CX SOT-23 5 pins TSM2301

    Untitled

    Abstract: No abstract text available
    Text: TSM2307 30V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 80 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2307 OT-23 TSM2307CX

    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS = 10V 3.5 94 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX

    TSM2302CX

    Abstract: TSM2302 tsm2302c
    Text: TSM2302 20V N-Channel Enhancement Mode MOSFET VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 3.6A = 65mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 95mΩ Pin assignment: 1. Gate 2. Source 3. Drain Features Advanced trench process technology Excellent thermal and electrical capabilities


    Original     		PDF TSM2302 OT-23 TSM2302CX OT-23 300uS, TSM2302CX TSM2302 tsm2302c

    TSM2301CX

    Abstract: sot-23 P-Channel MOSFET TSM2301 MOSFET P-Channel sot-23
    Text: TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities


    Original     		PDF TSM2301 OT-23 TSM2301CX OT-23 300uS, TSM2301CX sot-23 P-Channel MOSFET TSM2301 MOSFET P-Channel sot-23

    TSM2301CX

    Abstract: TSM2301 mosfet marking code AL sot-23 MOSFET P channel SOT-23 TSM2301CX A1 SOT-23 MOSFET P-CHANNEL TSM-2
    Text: s TAIWAN SEMICONDUCTOR TSM2301 20V P-Channel MOSFET pb RoHS C O M PL iA N C E PRODUCT SUMMARY SO T-23 3 F in D efinition: V 1. Gate 2. Source 1 2 ds R oW m Q ) b (A) 130 @ V CS= -4 .5 V -2.8 @ VGS = -2.5V -2.0 (V ) -20 3 . D ra in 190 Features Block Diagram


    OCR Scan     		PDF TSM2301 OT-23 TSM2301CX OT-23 TSM2301 mosfet marking code AL sot-23 MOSFET P channel SOT-23 TSM2301CX A1 SOT-23 MOSFET P-CHANNEL TSM-2

    Untitled

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR TSM2301B 20V P-Channel MOSFET bl RoHS CO M PLIANCE PRODUCT SUMMARY R oW m Q VDS V) SOT-23 1 2 Pin Definition: 1. Gate 2. Source 3. Drain -20 100 @VCS=-4.5V -2.8 150 @ VGS= -2.5V -2.0 190@ Vgs = -1.8V -2.0 Features Block Diagram •


    OCR Scan     		PDF TSM2301B OT-23 TSM2301BCX

    marking 2U 58 diode

    Abstract: MOSFET SOT-23 marking code M2 marking 2U 20 diode SOT23 MARKING CODE Qp TSM2301B A1 SOT-23 MOSFET P-CHANNEL TSM2301 marking 2U diode marking 25g sot23 marking 2U 02 diode
    Text: E TAIWAN TSM2301B S E M IC O N D U C T O R pb RoHS 20V P-Channel MOSFET CO M PLIANCE PRODUCT SUM M ARY SO T-23 é 1 2 P in D e fin itio n : 1. Gate 2. Source 3. Drain R Ds (o n ) ( m Q ) b (A) 1 0 0 @ V CS= - 4 . 5 V -2 .8 1 5 0 @ V GS = - 2 .5 V -2 .0 1 9 0 @ V gs = - 1 .8 V


    OCR Scan     		PDF TSM2301B OT-23 TSM2301BCX OT-23 marking 2U 58 diode MOSFET SOT-23 marking code M2 marking 2U 20 diode SOT23 MARKING CODE Qp TSM2301B A1 SOT-23 MOSFET P-CHANNEL TSM2301 marking 2U diode marking 25g sot23 marking 2U 02 diode

    P-CHANNEL MOSFET

    Abstract: p-channel mosfet BL
    Text: TAIWAN SEMICONDUCTOR s TSM2301B 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-23 Pin D efinition: 1. Gate 2. Source 3. Drain & 1 R Ds on)(mQ) b (A) 100 @ V c s = -4.5V -2.8 150 @ VGS = -2.5V -2.0 1 9 0 @ V gs = -1.8V -2.0 V DS (V) -20 2


    OCR Scan     		PDF TSM2301B 2301B P-CHANNEL MOSFET p-channel mosfet BL

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM2301 20V P-Channel MOSFET pbi RoHS CO M PLfAN C E PRODUCT SUMMARY SO T-23 Pin D efin itio n : 1. Gate 2. Source 3. Drain & 1 V ds RoW m Q b (A) 130 @ V CS= -4 .5 V -2.8 190 @ VGS = -2.5V -2.0 (V ) -20 2 Features Block Diagram ♦


    OCR Scan     		PDF TSM2301