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    TSM2301CX Price and Stock

    Taiwan Semiconductor TSM2301CX-RFG

    MOSFET P-CHANNEL 20V 2.8A SOT23
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    DigiKey TSM2301CX-RFG Digi-Reel 1
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    TSM2301CX-RFG Cut Tape 1
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    TSM2301CX-RFG Reel 6,000
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    MOSLEADER TSM2301CX-RFG-ML

    P-Channel -20V -2.8A SOT-23
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    DigiKey TSM2301CX-RFG-ML Reel 200
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    Taiwan Semiconductor TSM2301CX

    Mosfet, P Channel, 20V, 2.3A, Sot-23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:450Mv Rohs Compliant: Yes |Taiwan Semiconductor TSM2301CX
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    Newark TSM2301CX Cut Tape 5
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    TSM2301CX Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2301CX Taiwan Semiconductor 20V P-Channel Enhancement Mode MOSFET Original PDF
    TSM2301CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 2.8A SOT23 Original PDF

    TSM2301CX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    TSM2301CX

    Abstract: TSM2301 P-Channel MOSFET code 1A
    Text: TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 130 @ VGS = -4.5V -2.8 190 @ VGS = -2.5V -2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2301 OT-23 TSM2301CX TSM2301 P-Channel MOSFET code 1A

    TSM2301CX

    Abstract: SK34A TS3404 TS3404CD TS3404CS VT100 15GBW
    Text: TS3404 PWM Buck Controller Pin assignment: 1. Out 2. Vcc 3. Comp. 4. FB 5. SCP 6. SS 7. CT 8. Gnd Supply Voltage Range 3.6V to 27V Output Driving Current 200mA Oscillator Frequency up to 300KHz General Description The TS3404 integrates Pulse Width Modulation PWM control circuit into a single chip, and makes simple work out of


    Original     		PDF TS3404 200mA 300KHz TS3404 TSM2301CX SK34A TS3404CD TS3404CS VT100 15GBW

    Untitled

    Abstract: No abstract text available
    Text: TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(m) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 130 @ VGS = -4.5V -2.8 190 @ VGS = -2.5V -2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2301 OT-23 TSM2301CX

    TSM2301CX

    Abstract: sot-23 MARKING CODE GS 5 MOSFET P-channel SOT-23 dd 127 dd 127 d marking 8A sot-23 sot-23 P-Channel MOSFET sot-23 MARKING CODE GS MOSFET P channel SOT-23 TSM2301CX SOT-23 5 pins TSM2301
    Text: TSM2301 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = -20V RDS on , Vgs @ -4.5V, Ids @ -2.8A =130mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ Features  Advanced trench process technology  Excellent thermal and electrical capabilities


    Original     		PDF TSM2301 OT-23 TSM2301CX OT-23 TSM2301CX sot-23 MARKING CODE GS 5 MOSFET P-channel SOT-23 dd 127 dd 127 d marking 8A sot-23 sot-23 P-Channel MOSFET sot-23 MARKING CODE GS MOSFET P channel SOT-23 TSM2301CX SOT-23 5 pins TSM2301

    TSM2301CX

    Abstract: sot-23 P-Channel MOSFET TSM2301 MOSFET P-Channel sot-23
    Text: TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities


    Original     		PDF TSM2301 OT-23 TSM2301CX OT-23 300uS, TSM2301CX sot-23 P-Channel MOSFET TSM2301 MOSFET P-Channel sot-23