27BSC
Abstract: TSM4872
Text: TSM4872 Preliminary 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 Features ID (A) 7.5 @ VGS = 10V 15 10 @ VGS = 4.5V 13 Block Diagram ● Advance Trench Process Technology
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Original
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PDF
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TSM4872
TSM4872CS
27BSC
TSM4872
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n-channel mosfet transistor
Abstract: 27BSC TSM4872
Text: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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Original
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PDF
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TSM4872
TSM4872CS
n-channel mosfet transistor
27BSC
TSM4872
|
Untitled
Abstract: No abstract text available
Text: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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Original
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PDF
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TSM4872
TSM4872CS
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