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    Abstract: No abstract text available
    Text: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 20 Features  RDS(on)(m) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Block Diagram Advance Trench Process Technology


    Original     		PDF TSM802 TSM802CQ

    mosfet 4800

    Abstract: esd protect mosfet p channel mosfet 10a 20v 12v 10A mosfet 4800 mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor P channel MOSFET 10A 4800 power mosfet
    Text: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 20 Features ● RDS(on)(mΩ) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Block Diagram Advance Trench Process Technology


    Original     		PDF TSM802 TSM802CQ mosfet 4800 esd protect mosfet p channel mosfet 10a 20v 12v 10A mosfet 4800 mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor P channel MOSFET 10A 4800 power mosfet