Untitled
Abstract: No abstract text available
Text: RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TSMT3 1.0MAX zFeatures 1) Low On-resistance 2) Space saving−small surface mount package (TSMT3) 3) 4V drive 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6
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RSR020P03
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)
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2SA2094
2SC5866
SC-96)
R1102A
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2SCR514R
Abstract: No abstract text available
Text: 2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A TSMT3 Collector Base Emitter 2SAR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)
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2SAR514R
SC-96)
2SCR514R
-300mA/
-15mA)
R1102A
2SCR514R
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Untitled
Abstract: No abstract text available
Text: RTR030P02 Transistors 2.5V Drive Pch MOS FET RTR030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RTR030P02
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2SCR514R
Abstract: No abstract text available
Text: 2SCR514R Datasheet NPN 0.7A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 0.7A TSMT3 Collector Base Emitter 2SCR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR514R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)
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2SCR514R
SC-96)
2SAR514R
300mA/15mA)
R1102A
2SCR514R
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors 80V / 2.5A 2SCR544R Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT3 1.0MAX Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6
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2SCR544R
R1120A
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RTR025P02
Abstract: No abstract text available
Text: RTR025P02 Transistors 2.5V Drive Pch MOS FET RTR025P02 zExternal dimensions Unit : mm zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). TSMT3 1.0MAX 2.9 0.85 0.4 0.7 1.6 2.8 (3) (2) (1) 0.95 0.95
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RTR025P02
RTR025P02
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RTR020P02
Abstract: No abstract text available
Text: RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT3 1.0MAX zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 2.9 0.85 0.4
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RTR020P02
RTR020P02
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RSR020P03
Abstract: TSMT3
Text: RSR020P03 Transistors 4V Drive Pch MOS FET RSR020P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT3 1.0MAX zFeatures 1) Low On-resistance 2) Space saving−small surface mount package (TSMT3) 3) 4V drive 2.9 0.85 0.4 0.7 1.6 2.8
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RSR020P03
RSR020P03
TSMT3
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2SD2653
Abstract: No abstract text available
Text: 2SD2653 Transistors Low frequency amplifier 2SD2653 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 180mV at IC = 1A / IB = 50mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)
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2SD2653
180mV
2SD2653
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RRR040P03
Abstract: 12Switch
Text: RRR040P03 Datasheet Pch -30V -4A Power MOSFET lOutline VDSS -30V RDS on (Max.) 45mW ID -4A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RRR040P03
R1120A
RRR040P03
12Switch
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RSR010N10
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch MOSFET RSR010N10 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) (1) (2) Abbreviated symbol : ZJ
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RSR010N10
RSR010N10
Pw10s,
R1120A
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2SC5866
Abstract: No abstract text available
Text: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)
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2SC5866
200mV
2SA2094
2SC5866
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors -50V / -3A 2SAR543R Structure PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT3 Features 1) Low saturation voltage V CE (sat) = -0.4V (Max.) (I C / I B= -2A / -100mA) (3) 2) High speed switching (1)
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2SAR543R
-100mA)
R1010A
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2SD2671
Abstract: LB75M
Text: 2SD2671 Transistors Low frequency amplifier 2SD2671 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) VCE(sat) : max. 370mV At lc=1.5A / lB=75mA 2.9 0.85 0.4 0.7 1.6 2.8
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2SD2671
370mV
2SD2671
LB75M
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Untitled
Abstract: No abstract text available
Text: 2SD2673 Transistors Low frequency amplifier 2SD2673 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. (3A) 2) VCE(sat) : max. 250mV At IC = 1.5A / IB = 30mA 2.9 0.85 0.4 0.7
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2SD2673
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors 80V / 2.5A 2SCR544R Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT3 1.0MAX Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6
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2SCR544R
40x40x0
R1120A
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RTR020P02
Abstract: No abstract text available
Text: RTR020P02 Transistors Switching −20V, −2.0A RTR020P02 TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zExternal dimensions (Unit : mm) zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3).
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RTR020P02
RTR020P02
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RRR015P03
Abstract: No abstract text available
Text: 4V Drive Pch MOSFET RRR015P03 Structure Silicon P-channel MOSFET Dimensions Unit : mm TSMT3 Features 1) Low On-resistance. 2) High power package. 3) 4V drive. (3) (1) (2) Abbreviated symbol : UJ Application Switching Inner circuit (3)
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RRR015P03
R1010A
RRR015P03
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Untitled
Abstract: No abstract text available
Text: RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Dimensions Unit : mm Structure Silicon N-channel MOSFET TSMT3 Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions
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RUR040N02
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Untitled
Abstract: No abstract text available
Text: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 Applications Low frequency amplifier Deiver External dimensions (Unit : mm) TSMT3 1.0MAX Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV
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2SB1690
180mV
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Untitled
Abstract: No abstract text available
Text: 2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions Unit : mm Application Low frequency amplifier Driver TSMT3 1.0MAX Features 1) A collector current is large. 2) VCE(sat) ≤ -370mV At lc= -1.5A / lB= -75mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)
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2SB1706
-370mV
-75mA
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Untitled
Abstract: No abstract text available
Text: RTR040N03 Transistors 2.5V Drive Nch MOS FET RTR040N03 External dimensions Unit : mm Structure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RTR040N03
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Untitled
Abstract: No abstract text available
Text: 4V Drive Pch MOSFET RRR040P03 Structure Silicon P-channel MOSFET Dimensions Unit : mm TSMT3 Features 1) Low On-resistance. 2) Space saving small surface mount package (TSMT3). 3) 4V drive. (3) (1) (2) Abbreviated symbol : UG Application Switching
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RRR040P03
R1010A
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