Untitled
Abstract: No abstract text available
Text: QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U33 combines Pch MOSFET with a Schottky barrier diode in TSMT5 package.
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QS5U33
QS5U33
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marking z04
Abstract: 2SB1706 2SD2671 tsmt5 "marking code" Z04
Text: QSZ4 Transistors General purpose transistor isolated transistor and diode QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ4 (5) (4) zFeatures 1) Low VCE(sat)
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2SB1706
2SD2671
marking z04
tsmt5
"marking code" Z04
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2SD2670
Abstract: marking code z03 2SB1705
Text: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor
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2SB1705
2SD2670
marking code z03
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2SB1709
Abstract: RB461F QSL9
Text: QSL9 Transistors General purpose transistor isolated transistor and diode QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL9 0.3 to 0.6 zStructure Silicon epitaxial planar transistor
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2SB1709
RB461F
QSL9
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Abstract: No abstract text available
Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 (5) 0.85 (4) 0~0.1 0.3∼0.6 0.7 0.16 (3)
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QSL12
2SD2675
RB461F
QSL12
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Abstract: No abstract text available
Text: QSL11 Transistors General purpose transistor isolated transistor and diode QSL11 A 2SB1710 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver zExternal dimensions (Units : mm) QSL11 (5) (1) ROHM : TSMT5
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QSL11
2SB1710
RB461F
QSL11
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Untitled
Abstract: No abstract text available
Text: Data Sheet Midium Power Transistors ±30V / ±3A QS5Y1 Structure PNP/NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT5 Features 1) Low saturation voltage, typically V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA) V CE (sat) = 0.40V (Max.) (I C / I B= 1A / 50mA)
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-50mA)
R1120A
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QS5U23
Abstract: No abstract text available
Text: QS5U23 Transistor Small switching –20V, –1.5A QS5U23 zExternal dimensions (Units : mm) 2.9+ −0.1 1.9 + −0.2 1.0MAX 0.85+ −0.1 0.3~0.6 zFeatures 1) The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSSFET have a low on-state resistance
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QS5U23
QS5U23
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2SD2674
Abstract: QSL10 RB461F
Text: QSL10 Transistors General purpose transistor isolated transistor and diode QSL10 A 2SD2674 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) QSL10 ROHM : TSMT5 zStructure
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QSL10
2SD2674
RB461F
QSL10
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qs5y2
Abstract: No abstract text available
Text: Midium Power Transistors ±50V / ±3A QS5Y2 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT5 Features 1) Low saturation voltage, typically V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA) V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA)
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-50mA)
R1010A
qs5y2
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Abstract: No abstract text available
Text: QS5U26 QS5U26 Transistor 2.5V Drive Pch+SBD MOSFET QS5U26 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 (1) 0~0.1 0.3~0.6 zFeatures 1) The QS5U26 combines Pch MOSFET with
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QS5U26
QS5U26
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Text: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.
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QS5U28
QS5U28
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Untitled
Abstract: No abstract text available
Text: General purpose transistor QSZ2 A 2SB1695 and a 2SD2657 are housed independently in a TSMT5 package. Dimensions Unit : mm Structure Silicon epitaxial planar transistor QSZ2 (5) (1) 0.3~0.6 0.85 0∼0.1 Applications DC / DC converter Motor driver
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2SB1695
2SD2657
R1120A
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Untitled
Abstract: No abstract text available
Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver QSL12 ROHM : TSMT5 Structure
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QSL12
2SD2675
RB461F
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Untitled
Abstract: No abstract text available
Text: QS5U36 Transistors 1.5V Drive Nch+SBD MOSFET QS5U36 Dimensions Unit : mm Structure Silicon N-channel MOSFET Schottky Barrier DIODE TSMT5 Features 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching.
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QS5U36
QS5U36
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Abstract: No abstract text available
Text: QS5U17 Transistors 2.5V Drive Nch+SBD MOS FET QS5U17 External dimensions Unit : mm Structure Silicon N-channel MOSFET Schottky Barrier DIODE TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U17 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.
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QS5U17
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QS5U16 equivalent
Abstract: QS5U16
Text: QS5U16 Transistors Small switching 30V, 2.0A QS5U16 zExternal dimensions (Unit : mm) 2.8±0.2 (5) 0.3 to 0.6 1.0MAX 2.9±0.1 1.9±0.2 0.95 0.95 0.85±0.1 0.7±0.1 (4) 1.6± 0.2 0.1 zFeatures 1) The QS5U16 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.
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QS5U16
QS5U16
QS5U16 equivalent
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QS5U16
Abstract: 2 Nch MOSFET
Text: QS5U16 Transistors Small switching 30V, 2.0A QS5U16 !External dimensions (Unit : mm) 2.8±0.2 (5) 0.3 to 0.6 1.0MAX 2.9±0.1 1.9±0.2 0.95 0.95 0.85±0.1 0.7±0.1 (4) 1.6± 0.2 0.1 !Features 1) The QS5U16 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.
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QS5U16
QS5U16
2 Nch MOSFET
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2SB1709
Abstract: RB461F MARKING L09 QSL9
Text: QSL9 Transistors General purpose transistor isolated transistor and diode QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. !External dimensions (Units : mm) !Applications DC / DC converter Motor driver QSL9 0.3~0.6 ROHM : TSMT5
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2SB1709
RB461F
symbolL09
1000m
MARKING L09
QSL9
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US5U30
Abstract: p-ch MOSfet
Text: US5U30 Transistor Small switching –20V, –1.5A US5U30 (5) 0.2 (1) 1.7 2.0 (3) (2) 1.3 (4) 0.65 0.65 0.3 zExternal dimensions (Unit : mm) 0.2 0.77 0~0.1 0.85Max. 2.1 0.17 zFeatures 1) The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.
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85Max.
US5U30
15Max.
p-ch MOSfet
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QS5U26
Abstract: No abstract text available
Text: QS5U26 Transistor 2.5V Drive Pch+SBD MOSFET QS5U26 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 (1) 0~0.1 0.3~0.6 zFeatures 1) The QS5U26 combines Pch MOSFET with
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QS5U27
Abstract: IR 240 FET
Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a
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QS5U27
IR 240 FET
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QS5U16
Abstract: No abstract text available
Text: QS5U16 Transistors 2.5V Drive Nch+SBD MOS FET QS5U16 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET Schottky Barrier DIODE TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U16 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package.
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Abstract: No abstract text available
Text: QS5U13 Transistors 2.5V Drive Nch+SBD MOS FET QS5U13 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET Schottky Barrier DIODE TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 (1) 0~0.1 0.3~0.6 zFeatures 1) The QS5U13 combines Nch MOSFET with a
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QS5U13
QS5U13
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