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    TSOP 50 PACKAGE Search Results

    TSOP 50 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 50 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GS70328

    Abstract: GS70328SJ-10 GS70328SJ-12 GS70328SJ-6 GS70328SJ-6I GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I
    Text: GS70328SJ/TS 32K x 8 256Kb Asynchronous SRAM SOJ, TSOP Commercial Temp Industrial Temp 6, 7, 8, 10, 12 ns 3.3 V VDD Corner VDD and VSS Features • Fast access time: 6, 7, 8, 10, 12 ns • 90/75/65/50/50 mA at max cycle rate • Single 3.3 V ± 0.3 V power supply


    Original     		PDF GS70328SJ/TS 256Kb 28-pin GS70328Rev1 12/1999KRev 2/2000L 2/2000L; GS70328 GS70328SJ-10 GS70328SJ-12 GS70328SJ-6 GS70328SJ-6I GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I

    amd29f040b

    Abstract: 29f040b amd 29f040 BM29F040 29F040-90TI AMD29F040
    Text: BRIGHT Preliminary BM29F040 Microelectronics Inc. 4 MEGABIT 512K x 8 5 VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL DESCRIPTION The BM29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as 512K x 8 bits each. The BM29F040 is offered in an Industry standard 32-pin package which is backward compatible to 1


    Original     		PDF BM29F040 BM29F040 32-pin amd29f040b 29f040b amd 29f040 29F040-90TI AMD29F040

    CY7C1049BV33-17ZC

    Abstract: CY7C1049BV33 CY7C1049BV33-12VC CY7C1049BV33-12VI CY7C1049BV33-12ZC CY7C1049BV33L-12VC
    Text: CY7C1049BV33 512K x 8 Static RAM 1CY7C1049BV33 Features • High speed — tAA = 15 ns • Low active power — 504 mW max. • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		PDF CY7C1049BV33 1CY7C1049BV33 CY7C1049BV33 CY7C1049BV33-17ZC CY7C1049BV33-12VC CY7C1049BV33-12VI CY7C1049BV33-12ZC CY7C1049BV33L-12VC

    amd 15h power

    Abstract: AM29LV640
    Text: Implementing a Common Layout for AMD MirrorBitTM and Intel StrataFlashTM Memory Devices Application Note Overview This document describes the benefits of designing with AMD MirrorBit Flash memory and the ease with which system designers can layout a board to accommodate high-density flash devices from both AMD and


    Original     		PDF 32Mb-128Mb 64Megabit amd 15h power AM29LV640

    IS61C12816

    Abstract: No abstract text available
    Text: ISSI IS61C12816 128K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply


    Original     		PDF IS61C12816 44-pin IS61C12816 152-bit IS61C12816-15T IS61C12816-15K 400-mil IS61C12816-20T IS61C12816-20K

    CY7C1021V33-15VI

    Abstract: 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI
    Text: fax id: 1077 CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021V I/O16) CY7C1021V33-15VI 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI

    MR27V1602E

    Abstract: No abstract text available
    Text: FEDR27V1602E-02-01 1Semiconductor MR27V1602E This version: Jul. 2000 1,048,576–Word x 16–Bit or 2,097,152–Word × 8–Bit Production Programmed Read Only Memory P2ROM GENERAL DESCRIPTION The MR27V1602E is a 16 Mbit Production Programmed Read-Only Memory (P2ROM ) that can be electrically


    Original     		PDF FEDR27V1602E-02-01 MR27V1602E MR27V1602E 576-word 16-bit 152-word 16-bit/2

    CY7C1011

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1011 128K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If byte high enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).


    Original     		PDF CY7C1011 I/O15) CY7C1011

    Untitled

    Abstract: No abstract text available
    Text: PDM31532 PDM31532 64K x 16 CMOS 3.3V Static RAM Features n n n n n n n n n 1 Description High-speed access times - Com’l: 9, 10, 12, 15 and 20 ns - Ind: 12, 15 and 20 ns Low power operation typical - PDM31532LA Active: 200 mW Standby: 10 mW - PDM31532SA


    Original     		PDF PDM31532 PDM31532LA PDM31532SA PDM31532 44-pin 400-mil

    A623308

    Abstract: A623308M-70S A623308V-70S
    Text: A623308 Series 8K X 8 BIT CMOS SRAM Document Title 8K X 8 BIT CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue July 2, 1999 Preliminary 0.1 Erase 55ns part December 14, 2000 0.2 Add –SI/SU part no. and change ICC1, Isb1 December 11, 2002


    Original     		PDF A623308 28-pin A623308-S A623308-SI/SU A623308M-70S A623308V-70S

    MSM514260C

    Abstract: MSM514260CSL
    Text: E2G0026-17-41 ¡ Semiconductor MSM514260C/CSL ¡ Semiconductor This MSM514260C/CSL version: Jan. 1998 Previous version: May 1997 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260C/CSL is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate


    Original     		PDF E2G0026-17-41 MSM514260C/CSL 144-Word 16-Bit MSM514260C/CSL MSM514260C MSM514260CSL

    MSM514265C

    Abstract: MSM514265CSL
    Text: E2G0027-17-41 ¡ Semiconductor MSM514265C/CSL ¡ Semiconductor This MSM514265C/CSL version: Jan. 1998 Previous version: May 1997 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM514265C/CSL is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate


    Original     		PDF E2G0027-17-41 MSM514265C/CSL 144-Word 16-Bit MSM514265C/CSL MSM514265C MSM514265CSL

    Untitled

    Abstract: No abstract text available
    Text: TC55V8512JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    Original     		PDF TC55V8512JI/FTI-12 288-WORD TC55V8512JI/FTI 304-bit 36-pin

    A420616

    Abstract: No abstract text available
    Text: A420616 Series Preliminary 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue June 23, 1999 Preliminary 0.1 Modify AC, DC data February 7, 2002


    Original     		PDF A420616 A420616 120mA

    Memory

    Abstract: S29AL032D SP VBN048 S29AL A0-A21 S29AL032D
    Text: S29AL032D 32 Megabit CMOS 3.0 Volt-only Flash Memory 4 M x 8-Bit Uniform Sector 4 M x 8-Bit/2 M x 16-Bit Boot Sector ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


    Original     		PDF S29AL032D 16-Bit S29AL032D Memory S29AL032D SP VBN048 S29AL A0-A21

    MSM5412222A

    Abstract: msm518222a MSM5412222A-25TA MSM5412222A-30TA
    Text: FEDS5412222A-02 1Semiconductor MSM5412222A This version: Aug. 2000 Previous version: Sep. 1999 262,214-Word x 12-Bit Field Memory DESCRIPTION The OKI MSM5412222A is a high performance 3-Mbit, 256K × 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and


    Original     		PDF FEDS5412222A-02 MSM5412222A 214-Word 12-Bit MSM5412222A 12-bit, MSM5412222As msm518222a MSM5412222A-25TA MSM5412222A-30TA

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00024-0v01-E Memory FRAM 4 M 256 K x 16 Bit MB85R4M2T  DESCRIPTIONS The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00024-0v01-E MB85R4M2T MB85R4M2T

    28c65b

    Abstract: CAT28C65B 1N914 CAT28C65BNI-15T
    Text: CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: ■ Commercial, Industrial and Automotive – 120/150ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: – Active: 25 mA Max. – Standby: 100 µA Max.


    Original     		PDF CAT28C65B 64K-Bit 120/150ns CAT28C65B 28C65B 500/Reel 8mmx13 120ns 150ns 28C65B 1N914 CAT28C65BNI-15T

    Untitled

    Abstract: No abstract text available
    Text: S29GL-A MirrorBit Flash Family S29GL064A, S29GL032A, and S29GL016A 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical


    Original     		PDF S29GL-A S29GL064A, S29GL032A, S29GL016A

    K4S561632E

    Abstract: K4S560432E K4S560432E-TC K4S560832E
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 256Mb 166MHz 16Bit A10/AP K4S561632E K4S560432E K4S560432E-TC K4S560832E

    K4S510632D-TC/L75

    Abstract: RA12 K4S510632D 875mil CMOS SDRAM
    Text: K4S510632D CMOS SDRAM Stacked 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Apr. 2002 Rev.0.0 Apr. 2002 K4S510632D CMOS SDRAM Revision History Revision 0.0 Apr., 2002 Rev.0.0 Apr. 2002 K4S510632D CMOS SDRAM 32M x 4Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S510632D 512Mbit K4S510632D A10/AP K4S510632D-TC/L75 RA12 875mil CMOS SDRAM

    A12L

    Abstract: A13L CY7C006 CY7C016 C0066
    Text: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)


    Original     		PDF CY7C006 CY7C016 CY7C006) CY7C016) 65-micron 68-pin 64-pinor A12L A13L CY7C006 CY7C016 C0066

    A29L400

    Abstract: No abstract text available
    Text: A29L400 Series 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications - Regulated voltage range: 3.0 to 3.6 volt read and write


    Original     		PDF A29L400 48TFBGA)

    A29512A

    Abstract: A29512A-55 A29512A-70 A29512AL-55 A29512AL-70 A29512AV-55 A29512AV-70 IN3064
    Text: A29512A Series 64K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


    Original     		PDF A29512A A29512A-55 A29512A-70 A29512AL-55 A29512AL-70 A29512AV-55 A29512AV-70 IN3064