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    TSOP48 OUTLINE Search Results

    TSOP48 OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TSOP48 OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m29f800fb

    Abstract: No abstract text available
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


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    PDF 200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 m29f800fb

    M29F800FT

    Abstract: M29F400FB M29F200FB m29f160fb M29F400F M29F400FT m29f800fb m29F160FT M29F200FT 0x22D6
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


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    PDF 200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 M29F800FT M29F400FB M29F200FB m29f160fb M29F400F M29F400FT m29f800fb m29F160FT M29F200FT 0x22D6

    M29F400FB

    Abstract: M29Fxxx M29F160FT m29f800F M29F400 M29F160F M29F400FT
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


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    PDF 200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 M29F400FB M29Fxxx M29F160FT m29f800F M29F400 M29F160F M29F400FT

    M29F400FB

    Abstract: m29f800fb M29F200FB M29F400FT M29F800FT m29f160fb M29Fxxx m29f160ft JEDEC TRAY TSOP1 0x22D2
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


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    PDF 200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 M29F400FB m29f800fb M29F200FB M29F400FT M29F800FT m29f160fb M29Fxxx m29f160ft JEDEC TRAY TSOP1 0x22D2

    M28F210

    Abstract: M28F220
    Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


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    PDF M28F210 M28F220 TSOP48 15/20mA M28F210 M28F220

    M28F210

    Abstract: M28F220
    Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


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    PDF M28F210 M28F220 TSOP48 15/20mA M28F210 M28F220

    Untitled

    Abstract: No abstract text available
    Text: M28V161 LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in SECTORS – 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per


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    PDF M28V161 TSOP48 100ns

    M29W640GB

    Abstract: M29W640GT M29W640GL
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)


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    PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 16-word/32-byte M29W640GH/L: M29W640GT/B M29W640GB

    M29W640GB

    Abstract: 3F8000H-3FFFFFH
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) TSOP48 (NA) 12 x 20 mm


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    PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 16-word/32-byte M29W640GH/L: M29W640GT/B M29W640GB 3F8000H-3FFFFFH

    M29W640GT

    Abstract: TSOP56 M29W640 M29W640GL M29W640GB 220ch M29W640GH numonyx m29 TFBGA48 448h
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) TSOP48 (NA) 12 x 20 mm


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    PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit TSOP48 TFBGA48 FBGA64 TBGA64 128-word TSOP56 M29W640 M29W640GL M29W640GB 220ch numonyx m29 TFBGA48 448h

    48-PIN

    Abstract: LRS1338A 1338a2
    Text: LRS1338A Data Sheet Stacked Chip 8M Flash Memory and 2M SRAM FEATURES PIN CONFIGURATION • Flash memory and SRAM • Stacked die chip scale package • 48-pin TSOP TSOP48-P-1014 plastic package 48-PIN TSOP TOP VIEW S-A16/F-A15 1 48 S-A17/F-A16 S-A15/F-A14


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    PDF LRS1338A 48-pin TSOP48-P-1014) S-A16/F-A15 S-A17/F-A16 S-A15/F-A14 I/O15 S-A14/F-A13 S-A13/F-A12 LRS1338A 1338a2

    M28V440

    Abstract: No abstract text available
    Text: M28V430 M28V440 LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) – Two 8K Byte or 4K Word Key Parameter


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    PDF M28V430 M28V440 TSOP48 15/20mA 120ns M28V440

    M29W400FT

    Abstract: m29w400f m29w800f BGA package tray 6x8mm M29W
    Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access time: 55 ns, 70 ns TSOP48 (N)


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    PDF M29W800FT M29W400FT M29W800FB M29W400FB M29W800F) M29W400F) m29w400f m29w800f BGA package tray 6x8mm M29W

    TSOP48 outline

    Abstract: AI-0065 st 339 TSOP32 TSOP56 TSOP*56 pd0003 TSOP56 Package Tape
    Text: PD0003 Packing information Thin Small Outline packages for memory products Tape and Reel shipping media Introduction Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 250 and 2500 devices.


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    PDF PD0003 330mm TSOP48 outline AI-0065 st 339 TSOP32 TSOP56 TSOP*56 pd0003 TSOP56 Package Tape

    TSOP56 Package Tape

    Abstract: TSOP48 outline TSOP56 TSOP32 TSOP56 REEL
    Text: TSOP TAPE & REEL Thin Small Outline Packages for Memory Products Tape and Reel Shipping Media INTRODUCTION Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 250 and 2500 devices.


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    PDF 330mm TSOP56 Package Tape TSOP48 outline TSOP56 TSOP32 TSOP56 REEL

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


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    PDF operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi

    Untitled

    Abstract: No abstract text available
    Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Mbit of spare area


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    PDF NAND32GW3D4A 32-Gbit 4224-byte

    NAND32GW3F4A

    Abstract: No abstract text available
    Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 32 Gbits of memory array – 1024 Mbits of spare area – Cost-effective solutions for mass storage


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    PDF NAND32GW3F4A 32-Gbit 4224-byte NAND32GW3F4A

    CDQ4

    Abstract: No abstract text available
    Text: 57. SGS-THOMSON M28V161 \u LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE


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    PDF M28V161 TSOP48 100ns TSOP48 A0-A20 CDQ4

    I252

    Abstract: No abstract text available
    Text: M28V430 M28V440 ¿ 7 7 SGS-1HOMSON LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location)


    OCR Scan
    PDF M28V430 M28V440 TSOP48 15/20mATypical 120ns M28V430, QQ712b3 I252

    Z3A19

    Abstract: TSOP48 outline TSOP48 footprint
    Text: $ 7 . S G S -1 H 0 N IS 0 N M28V161 • S M S it g liM Q t g i LOW VOLTAGE 16 Megabit (2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each ■ 3.3V ± 0.3V SUPPLY VOLTAGE


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    PDF M28V161 TSOP48 100ns TSOP48 7TBT23? Z3A19 TSOP48 outline TSOP48 footprint

    L25D

    Abstract: No abstract text available
    Text: ^7#. M28V430 M28V440 SGS-THOMSON MD [i3 ILI{gTr[i3®Rl gS LOW VOLTAGE 4 Megabit (x8 or x16, Block Erase FLASH M EM O RY PR O D U C T PREVIEW DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


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    PDF M28V430 M28V440 TSOP48 15/20m L25D

    28F220

    Abstract: 3542J 3D IC
    Text: 5 7 . S C S -T H O M S O N M28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


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    PDF M28F210 M28F220 TSOP48 15/20m 28F220 3542J 3D IC

    28F220

    Abstract: aish
    Text: M 28F210 M 28F220 S G S -1 H 0 M S 0 N 5 7 . EO glS(a i[Li re©li!!lD(gi 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA • DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


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    PDF 28F210 28F220 TSOP48 or48K 15/20m M28F210, M28F220 28F220 aish