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    TSOP6 MARKING AV Search Results

    TSOP6 MARKING AV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    TSOP6 MARKING AV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-CHANNEL -30V -4A

    Abstract: IRFTS9342TRPBF mosfet 23 Tsop-6 IRLML9301TR IRFTS9342 IRF5800TRPBF
    Text: PD - 96029A IRF5800PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free A D D 1 6 D 2 5 D G 3 4 S Description VDSS = -30V RDS on = 0.085Ω Top View


    Original     		PDF 6029A IRF5800PbF OT-23. IRF5800TRPBF IRF5800TR 12-Jul-2012 P-CHANNEL -30V -4A IRFTS9342TRPBF mosfet 23 Tsop-6 IRLML9301TR IRFTS9342 IRF5800TRPBF

    IRF5820

    Abstract: IRF5800 IRF5810 SI3443DV IRF5851
    Text: PD -94198A IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF -94198A IRF5810 IRF5820 IRF5800 IRF5810 SI3443DV IRF5851

    IRF5852

    Abstract: IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820
    Text: PD - 93999A IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier


    Original     		PDF 3999A IRF5852 IRF5852 IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820

    IRF5820

    Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
    Text: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF 4333A IRF5804 OT-23. IRF5820 IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d

    IRF5820

    Abstract: IRF5800
    Text: PD - 93850A IRF5800 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3850A IRF5800 OT-23. IRF5820 IRF5800

    IRF5820

    Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
    Text: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF 94333B IRF5804 OT-23. IRF5820 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d

    IRF5851

    Abstract: n-p channel mosfet tsop6 IRF5800 SI3443DV TSOP 66 Package thermal resistance sot-23 MARKING CODE G1 variac
    Text: PD-93998B IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced


    Original     		PDF PD-93998B IRF5851 IRF5851 n-p channel mosfet tsop6 IRF5800 SI3443DV TSOP 66 Package thermal resistance sot-23 MARKING CODE G1 variac

    IRF5805

    Abstract: SI3443DV TSOP6 Marking Code 17 IRF5820
    Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF -94029A IRF5805 OT-23. spac252-7105 IRF5805 SI3443DV TSOP6 Marking Code 17 IRF5820

    IRF5820

    Abstract: SI3443DV IRF5800 IRF5850
    Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3947A IRF5850 IRF5850 OT-23 IRF5820 SI3443DV IRF5800

    Untitled

    Abstract: No abstract text available
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6


    Original     		PDF Si3457BDV Si3457BDV-T1-E3 Si3457BDV-T1-GE3 11-Mar-11

    si3457-b

    Abstract: No abstract text available
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6


    Original     		PDF Si3457BDV Si3457BDV-T1-E3 Si3457BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3457-b

    IRF5820

    Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
    Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3997A IRF5806 OT-23. space252-7105 IRF5820 IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D

    Untitled

    Abstract: No abstract text available
    Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF -94029A IRF5805 OT-23.

    Untitled

    Abstract: No abstract text available
    Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3997A IRF5806 OT-23.

    Si3443DV

    Abstract: P-Channel 200V MOSFET TSOP6
    Text: PD- 93795A Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3795A Si3443DV OT-23. P-Channel 200V MOSFET TSOP6

    Vishay DaTE CODE tsop-6

    Abstract: SI3457CDV-T1-GE
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si3457CDV Si3457CDV-T1-E3 Si3457CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 SI3457CDV-T1-GE

    Untitled

    Abstract: No abstract text available
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6


    Original     		PDF Si3457BDV Si3457BDV-T1-E3 Si3457BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si3457CDV Si3457CDV-T1-E3 Si3457CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si3433CDV Si3433CDV-T1-E3 Si3433CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si3433CDV Si3433CDV-T1-E3 Si3433CDV-T1-GE3 11-Mar-11

    SI3457CDV-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si3457CDV Si3457CDV-T1-E3 Si3457CDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si3433CDV Si3433CDV-T1-E3 Si3433CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF580

    Abstract: No abstract text available
    Text: PD-95262A IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF PD-95262A IRF5803PbF OT-23. IRF580

    Si3443DV

    Abstract: P-Channel 200V MOSFET TSOP6 93795B
    Text: PD- 93795B Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 93795B Si3443DV OT-23. P-Channel 200V MOSFET TSOP6 93795B