igbt xenon tube
Abstract: xenon tube Xenon Flash 6v xenon flash circuit TIG030TS Xenon flash tube Xenon igbt flash TIG032TS TIG058E8
Text: T OP I C S News Release Product Topics 22.January 2009 release Ultra Small Xenon Flash IGBT for Cell Phone Achieved ICP=150A with small 2.8mm x 2.9mm size first in the industry Mount height 0.9mm! The industry’s smallest size* that is optimal for mounting on cell phones with a camera.
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TIG058E8
TIG058E8
00V/100A
0000W
RE0208DA
33nsec
OD-323
TIG030TS
TIG032TS
igbt xenon tube
xenon tube
Xenon Flash 6v
xenon flash circuit
TIG030TS
Xenon flash tube
Xenon
igbt flash
TIG032TS
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Xenon Flash 6v
Abstract: xenon Xenon Flash xenon 5W 12V TIG032TS TIG030TS TIG014SS TIG058E8 RE0208DA IGBT 320V
Text: T OP I C S 新 闻 发 表 新 商 品 2009年1月22日新闻发表 手机用超小型Xenon Flash IGBT 它以业界最小2.8mm x 2.9mm实现了ICP=150A 安装高度实现了0.9mm! 最适用于带照相功能的手机。它实现了业界最小*安装面积。*: 截至2009年1月22日
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TIG058E8
00V/100A
0000W
LED6000
12mm2
TIG030TS
Xenon Flash 6v
xenon
Xenon Flash
xenon 5W 12V
TIG032TS
TIG030TS
TIG014SS
TIG058E8
RE0208DA
IGBT 320V
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P-Channel mosfet 400v to220
Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages
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CM600HA-5F
CM450HA-5F
CM350DU-5F
CM200TU-5F
CT60AM-18B
P-Channel mosfet 400v to220
IGBT DRIVE 500V 300A
400V switching transistor 0,3A mosfet
forklift
Microwave Oven Inverter Control IC
apec
CT60AM-18B
igbt 100a 150v
ct60am
Transistor Mosfet N-Ch 30V
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CY25BAH-8F
Abstract: CY25BAH-8F-T13 TSSOP8 IGBT FLASH
Text: CY25BAH-8F Nch IGBT for Strobe Flash REJ03G0284-0300 Rev.3.00 Nov 29, 2005 Features • Small surface mount package TSSOP-8 Terminal Pb free: PTSP0008JA-A (8P2J-A) Complete Pb free: PTSP0008JB-B (TTP-8DV) • VCES : 400 V • ICM : 150 A • Drive voltage : 2.5 V
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CY25BAH-8F
REJ03G0284-0300
PTSP0008JA-A
PTSP0008JB-B
CY25BAH-8F
CY25BAH-8F-T13
TSSOP8 IGBT FLASH
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STROBE FLASHER USE IGBT
Abstract: CY25BAH-8F CY25BAH-8F-T13 400UF
Text: CY25BAH-8F Nch IGBT for Strobe Flasher REJ03G0284-0100 Rev.1.00 Aug.20.2004 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 2.5 V Outline TSSOP-8 4 3 2 1 5 8 1,2,3,4 : Collector 5,6 : Emitter 7 : Emitter
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CY25BAH-8F
REJ03G0284-0100
STROBE FLASHER USE IGBT
CY25BAH-8F
CY25BAH-8F-T13
400UF
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led strobe light circuit diagram
Abstract: RJP4002ASA Diagram igbt flash RD3CYD08 RJP4002ASA-00-Q0
Text: RJP4002ASA Nch IGBT for Strobe Flash REJ03G1473-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 2.5 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)
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RJP4002ASA
REJ03G1473-0100
PTSP0008JB-B
led strobe light circuit diagram
RJP4002ASA
Diagram igbt flash
RD3CYD08
RJP4002ASA-00-Q0
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RD5CYD08
Abstract: RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0
Text: RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)
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RJP4003ASA
REJ03G1475-0100
PTSP0008JB-B
RD5CYD08
RD5CYDT08
RJP4003ASA
RJP4003ASA-0-Q0
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STROBE FLASHER USE IGBT
Abstract: CY25BAJ-8F CY25BAJ-8F-T13
Text: CY25BAJ-8F Nch IGBT for Strobe Flasher REJ03G0285-0100 Rev.1.00 Aug.20.2004 Features • • • • Small surface mount package TSSOP-8 VDSS : 400 V ICM : 150 A Drive voltage : 4 V Outline TSSOP-8 4 3 2 1 5 8 1,2,3,4 : Collector 5,6,7 : Emitter 8 : Gate
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CY25BAJ-8F
REJ03G0285-0100
STROBE FLASHER USE IGBT
CY25BAJ-8F
CY25BAJ-8F-T13
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RD5CYD08
Abstract: RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0 TSSOP8 IGBT FLASH
Text: RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0200 Rev.2.00 Nov 10, 2008 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)
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RJP4003ASA
REJ03G1475-0200
PTSP0008JB-B
RD5CYD08
RD5CYDT08
RJP4003ASA
RJP4003ASA-0-Q0
TSSOP8 IGBT FLASH
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CY25BAJ-8F
Abstract: CY25BAJ-8F-T13
Text: CY25BAJ-8F Nch IGBT for Strobe Flash REJ03G0285-0200 Rev.2.00 May 23, 2005 Features • Small surface mount package TSSOP-8 Terminal Pb free: PTSP0008JA-A (8P2J-A) Complete Pb free: PTSP0008JB-B (TTP-8DV) • VDSS : 400 V • ICM : 150 A • Drive voltage : 4 V
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CY25BAJ-8F
REJ03G0285-0200
PTSP0008JA-A
PTSP0008JB-B
Tst-900
Unit2607
CY25BAJ-8F
CY25BAJ-8F-T13
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
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FGW15N40
Abstract: 15N40 TSSOP8 IGBT FLASH
Text: FGW15N40 Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 5.0V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGW15N40
FGW15N40
15N40
TSSOP8 IGBT FLASH
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Untitled
Abstract: No abstract text available
Text: FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGW15N40A
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CY25BAH-8F
Abstract: CY25BAH-8F-T13 cy25ba
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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scr trigger battery charger
Abstract: scr use in battery charger Battery Charger by using SCR Battery Charger with SCR scr battery charger circuit diagram charger circuit with scr AT1453 AT1453AP AT1453BP scr battery charger
Text: AT1453 Preliminary Product Information Photoflash Capacitor Charger for DSC Features General Description • 2.5 to 5.5V supply voltage operating range. • Low current consumption: 1mA in operation, • 50 kHz or 100kHz operation frequency . • Built-in maximum duty control.
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AT1453
100kHz
AT1453
scr trigger battery charger
scr use in battery charger
Battery Charger by using SCR
Battery Charger with SCR
scr battery charger circuit diagram
charger circuit with scr
AT1453AP
AT1453BP
scr battery charger
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scr battery charger
Abstract: AT1452AP scr trigger battery charger scr battery charger circuit diagram Battery Charger Circuit Using SCR charger circuit with scr photoflash charger SCHEMATIC circuit scr oscillator AT1452 AT1452BP
Text: AT1452 Preliminary Product Information Photoflash Capacitor Charger for DSC Features General Description • 2.5 to 5.5V supply voltage operating range. • Low current consumption: 1mA in operation, • 50 kHz or 100kHz operation frequency . • Built-in maximum duty control.
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AT1452
100kHz
AT1452
swi47
scr battery charger
AT1452AP
scr trigger battery charger
scr battery charger circuit diagram
Battery Charger Circuit Using SCR
charger circuit with scr
photoflash charger
SCHEMATIC circuit scr oscillator
AT1452BP
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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8g136
Abstract: toshiba week code marking
Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)
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GT8G136
dissipationt10
8g136
toshiba week code marking
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GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
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BCE0010A
GT30F121
GT30G121
GT30G131
MG30T1AL1
GT30*122
GT45F12
MG60M1AL1
gt30f
GT60M301
GT60M101
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Untitled
Abstract: No abstract text available
Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)
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GT8G136
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Untitled
Abstract: No abstract text available
Text: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability C C C VCE 400V ICP 150A C Low Gate Drive Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings
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AP28G40GEO
00V/us,
0V-30V)
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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