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    TSSOP8 THERMAL PERFORMANCE Search Results

    TSSOP8 THERMAL PERFORMANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TSSOP8 THERMAL PERFORMANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HL04

    Abstract: HL-04 HEL04 KEL04 E104 MC100EL04 MC10EL04
    Text: MC10EL04, MC100EL04 5V ECL 2-Input AND/NAND The MC10EL/100EL04 is a 2‐input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E104, the EL04 is ideally suited for those


    Original     		PDF MC10EL04, MC100EL04 MC10EL/100EL04 HEL04 MC10EL04/D HL04 HL-04 HEL04 KEL04 E104 MC100EL04 MC10EL04

    Untitled

    Abstract: No abstract text available
    Text: MC10EL04, MC100EL04 5V ECL 2-Input AND/NAND The MC10EL/100EL04 is a 2‐input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E104, the EL04 is ideally suited for those


    Original     		PDF MC10EL04, MC100EL04 MC10EL/100EL04 HEL04 MC10EL04/D

    HEP08

    Abstract: HP08 MC100EP08 MC10EP08 kep08
    Text: MC10EP08, MC100EP08 3.3V / 5V ECL 2-Input Differential XOR/XNOR Description The MC10/100EP08 is a differential XOR/XNOR gate. The EP08 is ideal for applications requiring the fastest AC performance available. The 100 Series contains temperature compensation.


    Original     		PDF MC10EP08, MC100EP08 MC10/100EP08 HEP08 MC10EP08/D HEP08 HP08 MC100EP08 MC10EP08 kep08

    KEL58

    Abstract: HL58 mc10el58 SPICE model MC10EL58D BR1011 HEL58 E158 MC100EL58 MC10EL58 kl58
    Text: MC10EL58, MC100EL58 5V ECL 2:1 Multiplexer The MC10EL/100EL58 is a 2:1 multiplexer. The device is functionally equivalent to the E158 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E158, the EL58 is ideally suited for those


    Original     		PDF MC10EL58, MC100EL58 MC10EL/100EL58 MC10EL58/D KEL58 HL58 mc10el58 SPICE model MC10EL58D BR1011 HEL58 E158 MC100EL58 MC10EL58 kl58

    HEL11

    Abstract: KEL11 KEL11 XA MC100EL11 MC10EL11
    Text: MC10EL11, MC100EL11 5V ECL 1:2 Differential Fanout Buffer The MC10EL/100EL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. The within-device skew and propagation delay is


    Original     		PDF MC10EL11, MC100EL11 MC10EL/100EL11 MC10EL11/D HEL11 KEL11 KEL11 XA MC100EL11 MC10EL11

    HEL16

    Abstract: kel16 E116 MC100EL16 MC10EL16
    Text: MC10EL16, MC100EL16 5V ECL Differential Receiver The MC10EL/100EL16 is a differential receiver. The device is functionally equivalent to the E116 device with higher performance capabilities. With output transition times significantly faster than the E116,


    Original     		PDF MC10EL16, MC100EL16 MC10EL/100EL16 MC10EL11/D HEL16 kel16 E116 MC100EL16 MC10EL16

    MC100

    Abstract: MC100EP05 MC100LVEP05
    Text: MC100LVEP05 2.5V / 3.3V ECL 2-Input Differential AND/NAND Description The MC100LVEP05 is a 2-input differential AND/NAND gate. The MC100LVEP05 is the low voltage version of the MC100EP05 and is functionally equivalent to the EL05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the


    Original     		PDF MC100LVEP05 MC100LVEP05 MC100EP05 LVEL05 MC100LVEP05/D MC100 MC100EP05

    LM75ADP

    Abstract: SE95 Temperature calibration AD1021A SE97 HVSON8 philips master replacement guide AD1021 ADM1032AR LM75AD tcn75-3.3mua
    Text: I2C-bus temperature sensors Small, accurate, low-cost sensors for advanced temperature regulation Accurate performance in a proven format NXP temperature sensors use the familiar I2C-bus/SMBus format* to deliver highly accurate temperature monitoring with low power consumption in a wide variety of applications.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MA2504W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load


    Original     		PDF MA2504W10000000 MA2504W D020210 3000pcs 6000pcs

    Untitled

    Abstract: No abstract text available
    Text: MA2507W10000000 Dual P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2507W is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load


    Original     		PDF MA2507W10000000 MA2507W D020210 3000pcs 6000pcs

    Untitled

    Abstract: No abstract text available
    Text: MA2506W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2506W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load


    Original     		PDF MA2506W10000000 MA2506W D020210 3000pcs 6000pcs

    Untitled

    Abstract: No abstract text available
    Text: MA2502W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load


    Original     		PDF MA2502W10000000 MA2502W D020210 3000pcs 6000pcs

    KEP11

    Abstract: HEP11 mv2215 EP11 LVEL11 MC100EP11 MC10EP11 100EP11
    Text: MC10EP11, MC100EP11 3.3V / 5V ECL 1:2 Differential Fanout Buffer The MC10/100EP11 is a differential 1:2 fanout buffer. The device is pin and functionally equivalent to the LVEL11 device. With AC performance much faster than the LVEL11 device, the EP11 is ideal


    Original     		PDF MC10EP11, MC100EP11 MC10/100EP11 LVEL11 r14525 MC10EP11/D KEP11 HEP11 mv2215 EP11 MC100EP11 MC10EP11 100EP11

    MPPT Algorithm

    Abstract: SPV1040 mppt BASED DC TO DC CONVERTER Solar mppt mppt code mppt MPPT PWM Solar mppt APPLICATION MPPT Perturb-and-observe method charger solar mppt
    Text: High-efficiency solar battery charger STMicroelectronics High-performance solar battery charger with embedded maximum power point tracking The SPV1040 is a high-efficiency, low-power, low-voltage DC-DC step-up converter that maximizes the energy transferred from the


    Original     		PDF SPV1040 STEVAL-ISV006V1) FLSPV10401010 MPPT Algorithm mppt BASED DC TO DC CONVERTER Solar mppt mppt code mppt MPPT PWM Solar mppt APPLICATION MPPT Perturb-and-observe method charger solar mppt

    SI6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD LV358 CMOS IC GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS  SOP-8 DESCRIPTION 1 The UTC LV358 is a dual op amp with low supply current and low voltage 2.7-5.5V . It brings nice performance to low voltage and low


    Original     		PDF LV358 LV358 QW-R502-316

    TSSOP-8 footprint

    Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
    Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE


    Original     		PDF AN1001 12-Dec-03 TSSOP-8 footprint MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY

    kvL11

    Abstract: No abstract text available
    Text: MC100LVEL11 3.3V ECL 1:2 Differential Fanout Buffer The MC100LVEL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times


    Original     		PDF MC100LVEL11 LVEL11 MC100LVEL11/D kvL11

    Untitled

    Abstract: No abstract text available
    Text: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1


    Original     		PDF Si6955ADQ Si6955ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT


    Original     		PDF Si6969BDQ Si6969BDQ-T1 Si6969BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6973DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.8 0.039 at VGS = - 2.5 V - 4.2 0.055 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6973DQ Si6973DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8


    Original     		PDF Si6926ADQ Si6926ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ S2 G2


    Original     		PDF Si6963BDQ Si6963BDQ-T1-GE3 70emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS


    Original     		PDF Si6981DQ Si6981DQ-T1-GE3 11-Mar-11