HL04
Abstract: HL-04 HEL04 KEL04 E104 MC100EL04 MC10EL04
Text: MC10EL04, MC100EL04 5V ECL 2-Input AND/NAND The MC10EL/100EL04 is a 2‐input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E104, the EL04 is ideally suited for those
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MC10EL04,
MC100EL04
MC10EL/100EL04
HEL04
MC10EL04/D
HL04
HL-04
HEL04
KEL04
E104
MC100EL04
MC10EL04
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Untitled
Abstract: No abstract text available
Text: MC10EL04, MC100EL04 5V ECL 2-Input AND/NAND The MC10EL/100EL04 is a 2‐input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E104, the EL04 is ideally suited for those
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MC10EL04,
MC100EL04
MC10EL/100EL04
HEL04
MC10EL04/D
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HEP08
Abstract: HP08 MC100EP08 MC10EP08 kep08
Text: MC10EP08, MC100EP08 3.3V / 5V ECL 2-Input Differential XOR/XNOR Description The MC10/100EP08 is a differential XOR/XNOR gate. The EP08 is ideal for applications requiring the fastest AC performance available. The 100 Series contains temperature compensation.
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MC10EP08,
MC100EP08
MC10/100EP08
HEP08
MC10EP08/D
HEP08
HP08
MC100EP08
MC10EP08
kep08
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KEL58
Abstract: HL58 mc10el58 SPICE model MC10EL58D BR1011 HEL58 E158 MC100EL58 MC10EL58 kl58
Text: MC10EL58, MC100EL58 5V ECL 2:1 Multiplexer The MC10EL/100EL58 is a 2:1 multiplexer. The device is functionally equivalent to the E158 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E158, the EL58 is ideally suited for those
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MC10EL58,
MC100EL58
MC10EL/100EL58
MC10EL58/D
KEL58
HL58
mc10el58 SPICE model
MC10EL58D
BR1011
HEL58
E158
MC100EL58
MC10EL58
kl58
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HEL11
Abstract: KEL11 KEL11 XA MC100EL11 MC10EL11
Text: MC10EL11, MC100EL11 5V ECL 1:2 Differential Fanout Buffer The MC10EL/100EL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. The within-device skew and propagation delay is
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MC10EL11,
MC100EL11
MC10EL/100EL11
MC10EL11/D
HEL11
KEL11
KEL11 XA
MC100EL11
MC10EL11
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HEL16
Abstract: kel16 E116 MC100EL16 MC10EL16
Text: MC10EL16, MC100EL16 5V ECL Differential Receiver The MC10EL/100EL16 is a differential receiver. The device is functionally equivalent to the E116 device with higher performance capabilities. With output transition times significantly faster than the E116,
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MC10EL16,
MC100EL16
MC10EL/100EL16
MC10EL11/D
HEL16
kel16
E116
MC100EL16
MC10EL16
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MC100
Abstract: MC100EP05 MC100LVEP05
Text: MC100LVEP05 2.5V / 3.3V ECL 2-Input Differential AND/NAND Description The MC100LVEP05 is a 2-input differential AND/NAND gate. The MC100LVEP05 is the low voltage version of the MC100EP05 and is functionally equivalent to the EL05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the
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MC100LVEP05
MC100LVEP05
MC100EP05
LVEL05
MC100LVEP05/D
MC100
MC100EP05
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LM75ADP
Abstract: SE95 Temperature calibration AD1021A SE97 HVSON8 philips master replacement guide AD1021 ADM1032AR LM75AD tcn75-3.3mua
Text: I2C-bus temperature sensors Small, accurate, low-cost sensors for advanced temperature regulation Accurate performance in a proven format NXP temperature sensors use the familiar I2C-bus/SMBus format* to deliver highly accurate temperature monitoring with low power consumption in a wide variety of applications.
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Untitled
Abstract: No abstract text available
Text: MA2504W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2504W10000000
MA2504W
D020210
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA2507W10000000 Dual P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2507W is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2507W10000000
MA2507W
D020210
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA2506W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2506W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2506W10000000
MA2506W
D020210
3000pcs
6000pcs
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Untitled
Abstract: No abstract text available
Text: MA2502W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2502W10000000
MA2502W
D020210
3000pcs
6000pcs
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KEP11
Abstract: HEP11 mv2215 EP11 LVEL11 MC100EP11 MC10EP11 100EP11
Text: MC10EP11, MC100EP11 3.3V / 5V ECL 1:2 Differential Fanout Buffer The MC10/100EP11 is a differential 1:2 fanout buffer. The device is pin and functionally equivalent to the LVEL11 device. With AC performance much faster than the LVEL11 device, the EP11 is ideal
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MC10EP11,
MC100EP11
MC10/100EP11
LVEL11
r14525
MC10EP11/D
KEP11
HEP11
mv2215
EP11
MC100EP11
MC10EP11
100EP11
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MPPT Algorithm
Abstract: SPV1040 mppt BASED DC TO DC CONVERTER Solar mppt mppt code mppt MPPT PWM Solar mppt APPLICATION MPPT Perturb-and-observe method charger solar mppt
Text: High-efficiency solar battery charger STMicroelectronics High-performance solar battery charger with embedded maximum power point tracking The SPV1040 is a high-efficiency, low-power, low-voltage DC-DC step-up converter that maximizes the energy transferred from the
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SPV1040
STEVAL-ISV006V1)
FLSPV10401010
MPPT Algorithm
mppt BASED DC TO DC CONVERTER
Solar mppt
mppt code
mppt
MPPT PWM
Solar mppt APPLICATION
MPPT Perturb-and-observe method
charger solar mppt
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SI6410DQ
Abstract: No abstract text available
Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D
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Si6410DQ
Si6410DQ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD LV358 CMOS IC GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS SOP-8 DESCRIPTION 1 The UTC LV358 is a dual op amp with low supply current and low voltage 2.7-5.5V . It brings nice performance to low voltage and low
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LV358
LV358
QW-R502-316
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TSSOP-8 footprint
Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE
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AN1001
12-Dec-03
TSSOP-8 footprint
MOSFET TSSOP-8
TSSOP8 Package
tssop8 thermal performance
single power diode package
AN1001
Si6436DQ
Si9936DY
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kvL11
Abstract: No abstract text available
Text: MC100LVEL11 3.3V ECL 1:2 Differential Fanout Buffer The MC100LVEL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times
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MC100LVEL11
LVEL11
MC100LVEL11/D
kvL11
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Untitled
Abstract: No abstract text available
Text: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1
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Si6955ADQ
Si6955ADQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT
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Si6969BDQ
Si6969BDQ-T1
Si6969BDQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6973DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.8 0.039 at VGS = - 2.5 V - 4.2 0.055 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated
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Si6973DQ
Si6973DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8
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Si6926ADQ
Si6926ADQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ S2 G2
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Si6963BDQ
Si6963BDQ-T1-GE3
70emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS
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Si6981DQ
Si6981DQ-T1-GE3
11-Mar-11
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