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    Vishay Siliconix SI6436DQ-T1

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    Bristol Electronics SI6436DQ-T1 9,000 3
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    Quest Components SI6436DQ-T1 7,200
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    SI6436DQ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6436DQ Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    Si6436DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI6436DQ Vishay N-Channel 30-V (D-S) Rated MOSFET Original PDF
    Si6436DQ Vishay Intertechnology N-Channel 30-V (D-S) Rated MOSFET Original PDF
    SI6436DQ-T1 Vishay Intertechnology N-Channel 30-V (D-S) Rated MOSFET Original PDF

    SI6436DQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-49534

    Abstract: Si6436DQ
    Text: Si6436DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 D S S G 1 D 2 8 7 Si6436DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6436DQ S-49534--Rev. 06-Oct-97 S-49534

    Si6436DQ

    Abstract: No abstract text available
    Text: Si6436DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 D S S G 1 D 2 8 7 Si6436DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6436DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si6436DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 D S S G 1 D 2 8 7 Si6436DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6436DQ 08-Apr-05

    Si6436DQ

    Abstract: No abstract text available
    Text: Si6436DQ Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOPĆ8 D S S G 1 2 D 3 8 Si6436DQ 4 7 6 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original     		PDF Si6436DQ S42910Rev.

    Si6436DQ

    Abstract: No abstract text available
    Text: Si6436DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 D S S G 1 D 2 8 7 Si6436DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6436DQ S-47958--Rev. 15-Apr-96

    S-49534

    Abstract: Si6436DQ
    Text: Si6436DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 D S S G 1 D 2 8 7 Si6436DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6436DQ 18-Jul-08 S-49534

    Si6436DQ

    Abstract: No abstract text available
    Text: Si6436DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 D S S G 1 D 2 8 7 Si6436DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6436DQ S-47958--Rev. 15-Apr-96

    S-49534

    Abstract: Si6436DQ
    Text: Si6436DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "4.4 0.070 @ VGS = 4.5 V "3.5 D TSSOP-8 D S S G 1 D 2 8 7 Si6436DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		PDF Si6436DQ S-49534--Rev. 06-Oct-97 S-49534

    Untitled

    Abstract: No abstract text available
    Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8


    Original     		PDF Si6543DQ Si6543DQ-T1 Si6543DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    MOSFET TSSOP-8

    Abstract: SI6410DQ
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8

    Untitled

    Abstract: No abstract text available
    Text: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1


    Original     		PDF Si6955ADQ Si6955ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT


    Original     		PDF Si6969BDQ Si6969BDQ-T1 Si6969BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si6465

    Abstract: No abstract text available
    Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6465DQ Si6465DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si6465

    Untitled

    Abstract: No abstract text available
    Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8


    Original     		PDF Si6926ADQ Si6926ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ S2 G2


    Original     		PDF Si6963BDQ Si6963BDQ-T1-GE3 70emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original     		PDF Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS


    Original     		PDF Si6981DQ Si6981DQ-T1-GE3 11-Mar-11

    SI6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2


    Original     		PDF Si6963BDQ Si6963BDQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS


    Original     		PDF Si6404DQ Si6404DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6459BDQ Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.115 at VGS = - 10 V - 2.7 0.150 at VGS = - 4.5 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si6459BDQ 2002/95/EC Si6459BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8


    Original     		PDF Si6926ADQ Si6926ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT


    Original     		PDF Si6969BDQ Si6969BDQ-T1 Si6969BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12