SI6543DQ Search Results

Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8

S-49534

Abstract: Si6543DQ
Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 30 P-Channel rDS(on) (W) D1 S2 TSSOP-8 8

Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8

Contextual Info: Si6543DQ Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8

Si6543DQ

Contextual Info: Si6543DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1

Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –30 ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 30 P-Channel rDS(on) (W) D1 S2 TSSOP-8 8

Contextual Info: Tem ic Si6543DQ Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) N-Channel 30 P-Channel 30 rD S(on ) ( Q ) Id (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGs = -10 V ±2.5 0.19 @ VGs = -4.5 V ±1.8 Di Q

S-49534

Abstract: Si6543DQ
Contextual Info: Si6543DQ Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1

Si6543DQ

Abstract: Si6543DQ-T1
Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8

AN609

Abstract: Si6543DQ
Contextual Info: Si6543DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6543DQ

Contextual Info: Si6543DQ Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆChannel Product Summary VDS (V) NĆChannel 30 PĆChannel -30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = -10 V "2.5 0.19 @ VGS = -4.5 V "1.8 D1 S2 TSSOPĆ8

Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8

Si6543DQ

Contextual Info: Si6543DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1

55c diode

Abstract: Si6543DQ S-47958-Rev
Contextual Info: Si6543DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "3.9 0.095 @ VGS = 4.5 V "3.1 0.085 @ VGS = –10 V "2.5 0.19 @ VGS = –4.5 V "1.8 D1 S2 TSSOP-8 D1 S1 S1 G1

Si4539DY

Abstract: Si6543DQ Si9939DY 51308
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

GS 069

Contextual Info: Temic SÌ9952DY S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V D S(V ) 25 N-Channel P-Channel I d (A ) r DS(on) (£2) -25 0 .1 0 @ V GS = 10V ± 3 .5 0.15 @ VGS = 4.5 V ± 2 .0 0.25 @ V gs = -1 0 V ± 2 .3 0.40 @ V gs = -4 .5 V

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

SI9952DY

Abstract: SI9952 Si4532DY Si4539DY Si6542DQ Si6543DQ Si9939DY
Contextual Info: Si9952DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 25 P-Channel –25 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.15 @ VGS = 4.5 V "2.0 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.8 Recommended upgrade: Si4532DY, Si4539DY or Si9939DY

Contextual Info: 7? tv u J 6 olZ'&Q. . —/ _ SÌ99S8DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary V d s (V) N-Channel 20 P-Channel -20 I d (A) ±3.5 ±3 ±2.5 ±3.5 ±3 ±2.5 rDS(on) (&) 0.10 @ VGS = 10 v 0.12 @ VGs = 6 V

Si6543DQ

Contextual Info: Temic SÌ6543DQ Se m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V u s (V ) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ Vos = -10 V ±2.5 0.19 @ V(jS = -4.5 V

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V