Untitled
Abstract: No abstract text available
Text: TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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R1120A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch +SBD MOSFET TT8U2 Dimensions Unit : mm Structure Silicon P-channel MOSFET / schottky barrier diode TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).
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Pw10s,
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J13 Dimensions Unit : mm Structure Silicon P-channel MOSFET TSST8 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive(1.5V drive). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J13
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TT8J13
TT8J13
R1120A
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TSST8
Abstract: RT1E060
Text: Data Sheet 4V Drive Nch MOSFET RT1E060XN Structure Silicon N-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : XR
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RT1E060XN
RT1E060XN
Pw10s,
20hing
R1120A
TSST8
RT1E060
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TT8M3
Abstract: 100td
Text: 1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low On-state resistance. 2) Low voltage drive(1.5V). 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M03
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R1010A
TT8M3
100td
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch +SBD MOSFET TT8U1 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U01
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R0039A
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Untitled
Abstract: No abstract text available
Text: 4V Drive Pch MOSFET TT8J2 Structure Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (4V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J02 Applications Switching Each lead has same dimensions
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance. 3) Low voltage drive(1.5V).
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R1120A
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Untitled
Abstract: No abstract text available
Text: RT1A060AP Pch -12V -6A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 19mW ID -6A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. Drain
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RT1A060AP
R1102A
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Untitled
Abstract: No abstract text available
Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02
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R0039A
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Untitled
Abstract: No abstract text available
Text: TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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R1120A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch +SBD MOSFET TT8U1 zStructure Silicon P-channel MOSFET / schottky barrier diode zDimensions Unit : mm TSST8 zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U01
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R0039A
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tt8k2
Abstract: No abstract text available
Text: TT8K2 Datasheet Nch 30V 2.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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R1120A
tt8k2
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Untitled
Abstract: No abstract text available
Text: RT1A045AP Datasheet Pch -12V -4.5A Power MOSFET lOutline VDSS -12V RDS on (Max.) 30mW ID -4.5A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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RT1A045AP
R1120A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Pch+Pch MOSFET TT8J21 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSST8 zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5 V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : J21 zApplications Switching
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TT8J21
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RT1A060AP
Abstract: No abstract text available
Text: Data Sheet 1.5V Drive Pch MOSFET RT1A060AP Structure Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSST8). (8) (7) (6) (5) (1) (2) (3) (4)
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RT1A060AP
RT1A060AP
R1120A
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TSST8
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Nch MOSFET TT8K11 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K11
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TT8K11
TT8K11
R1120A
TSST8
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1.5V Drive Pch +SBD MOSFET TT8U2 Structure Silicon P-channel MOSFET / schottky barrier diode Dimensions Unit : mm TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance.
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R1120A
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tt8m11
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Pch MOSFET TT8M11 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (8) (7) (6)
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TT8M11
TT8M11
R1120A
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Untitled
Abstract: No abstract text available
Text: RT1A045AP Datasheet Pch -12V -4.5A Power MOSFET Outline VDSS 12V RDS on (Max.) 30m ID 4.5A PD 1.25W Features (8) TSST8 (7) (6) (5) (1) (2) (3) (4) Inner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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RT1A045AP
R1102A
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Untitled
Abstract: No abstract text available
Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET zDimensions Unit : mm TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4)
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R0039A
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Untitled
Abstract: No abstract text available
Text: TT8J21 Pch -20V -2.5A Power MOSFET Datasheet lOutline VDSS -20V RDS on (Max.) 68mW ID -2.5A PD 1.25W lFeatures (8) (7) TSST8 (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSST8).
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TT8J21
R1120A
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Untitled
Abstract: No abstract text available
Text: RT1C060UN Datasheet Nch 20V 6A Power MOSFET lOutline VDSS 20V RDS on (Max.) 28mW ID 6A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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RT1C060UN
R1120A
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charge controller 12V
Abstract: No abstract text available
Text: 1.5V Drive Pch MOSFET RT1A040ZP zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : YE Each lead has same dimensions
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RT1A040ZP
charge controller 12V
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