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    TTC013 Price and Stock

    Metcal STTC-013

    Soldering Irons Cartridge Chisel 3mm(0.12 in) 90Deg
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    Mouser Electronics STTC-013 1
    • 1 $46.5
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    • 100 $46.5
    • 1000 $46.5
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    Newark STTC-013 Bulk 1
    • 1 $46.5
    • 10 $46.5
    • 100 $46.5
    • 1000 $46.5
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    Techni-Tool, Inc. STTC-013 3
    • 1 $46.5
    • 10 $46.5
    • 100 $46.5
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    TestEquity LLC STTC-013 3
    • 1 $46.5
    • 10 $46.5
    • 100 $46.5
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    Toshiba America Electronic Components TTC013(TE12L,C,ZE)

    Trans GP BJT NPN 350V 0.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical TTC013(TE12L,C,ZE) 1,120 243
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    TTC013(TE12L,C,ZE) 1,000 394
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    • 1000 $0.1856
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    Quest Components TTC013(TE12L,C,ZE) 824
    • 1 $0.57
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    • 100 $0.57
    • 1000 $0.228
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    Chip1Stop TTC013(TE12L,C,ZE) Cut Tape 1,140
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    • 10 $0.118
    • 100 $0.106
    • 1000 $0.0961
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    TTC013 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TTC013 Toshiba Transistors Original PDF
    TTC013 Toshiba Japanese - Transistors Original PDF
    TTC013 Toshiba TTC013 - TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    TTC013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TTC013 バイポーラトランジスタ シリコンNPN三重拡散形 TTC013 1. 用途 • 高電圧スイッチング用 • LCDバックライト用 2. 特長 1 高耐圧です: VCEO = 350 V (2) 直流電流増幅率が高い: hFE = 100200 (IC = 50 mA)


    Original     		PDF TTC013

    TTC013

    Abstract: No abstract text available
    Text: TTC013 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 1. Applications • High-Voltage Switching • LCD Backlighting 2. Features 1 High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit


    Original     		PDF TTC013 TTC013

    Untitled

    Abstract: No abstract text available
    Text: TTC013 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 1. Applications • High-Voltage Switching • LCD Backlighting 2. Features 1 High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit


    Original     		PDF TTC013

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF