bly87c
Abstract: transistor tt 2222 yl 1060
Text: N AMER PHILIPS/DISCRETE bTE D • ttS3T31 ODSTbbb 415 H A P X BLY87C Jl V.H.F. POWER TRANSISTOR N-P-N silico n planar e pitaxial tra nsistor intended fo r use in class-A, B and C operated m obile, h.f. and v.h.f. transm itters w ith a nom inal su p p ly voltage o f 13,5 V . T h e tra nsistor is resistance sta bilize d and
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bb53S31
BLY87C
7Z77729
7Z77730
bly87c
transistor tt 2222
yl 1060
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Untitled
Abstract: No abstract text available
Text: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.
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PO40/44A
OT90B
PO40/44A
P040A,
P042A,
P043A,
P044A
satur10'
bbS3T31
0D35S50
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Untitled
Abstract: No abstract text available
Text: • 0Q2HS31} TST H A P X N AUER PHILIPS/DISCRETE BCV28 BCV48 b7E » y v SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistors, housed in a microminiature envelope SOT89 . NPN complementary types are BCV29/49. QUICK REFERENCE DATA BCV28
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0Q2HS31
BCV28
BCV48
BCV29/49.
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BJE 42
Abstract: 9 BJE 42
Text: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability
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bbS3R31
003010b
BLF542
MBA931
MRA732
MRA971
BJE 42
9 BJE 42
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BUK543-50A
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE ^ 5 3 = 1 3 1 ooaasaa i BSE D PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK543-50A
BUK543-50B
BUK543
SfON126
ttS3T31
BUK543-50A
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M3-338
Abstract: m2296 BY249F M230-3 00Sb3
Text: S5E » N AMER PHI LIPS/DISCRETE • bbSBTBl GQ22323 5 ■ " BY249F SERIES T - O I - W ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, intended fo r power rectifier applications. Their electrical isolation makes them ideal fo r m ounting on a common heatsink
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bti53tÃ
GQ22323
BY249F
BV249Fâ
OT-186
M0275
bfa53
DQ253HT
M2303
M3-338
m2296
M230-3
00Sb3
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