2P4M

Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Contextual Info: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)

all transistor

Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Contextual Info: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation

carrier detect phase shift

Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

ACE9020

Abstract: ACE9030 ACE9040 ACE9050 AMP01
Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

ampo1

Abstract: AN94, Using the NJ88C33 PLL Synthesiser 616181-8
Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Data Sheet May 2005 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

carrier detect phase shift

Abstract: ACE9020 ACE9030 ACE9040 ACE9050 AMP01
Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

Constant fraction discriminator

Abstract: squarewave generator carrier detect phase shift old fm radio diagram transistor tank fill ACE9020 ACE9030 ACE9040 ACE9050 AMP01
Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

ACE9020

Abstract: ACE9030 ACE9040 ACE9050 AMP01 ampo1
Contextual Info: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,

Contextual Info: Si GEC PLESSEY _PRELIMINARY INFORMATION S E M I C O N D U C T O R S ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor

Contextual Info: MITEL ACE9030 Radio Interface and Twin Synthesiser SE M IC O N D U C T O R Supersedes February 1997 edition, DS4288 - 1.4 DS4288 - 2.0 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor

Contextual Info: ACE9030 M IT E L Radio Interface and Twin Synthesiser SE M IC O N D U C T O R Supersedes February 1997 edition, DS4288 - 1.4 DS4288 - 2.0 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor

siemens opto sensor

Contextual Info: 96D SIEMENS CAPITAL/ OPTO 03756 D 7* V / * ^ 7 H DI flE3b3Sb DDDBVSb T LHi1158 Pyroelectric-Twin-Detector The twin detector is the sensor component designed for alarm devices with increased req uire me nts as to re Iiabi I ity a nd safety ag ai nst false alarm. Located in a standard TO-5 hou­

Contextual Info: SIEMENS AKTIENGE SEL LSCHAF 4?E D A235bD5 DOHVflT? 2 I S I Ef i T -m -k '7 LHi 1158 LHi 1158 Pyroelectric-Twin-Detector The twin detector is the sensor component designed for alarm devices with increased requirements as to reliability and safety against false alarm. Located in a standard TO -5 hou­

BY122

Abstract: T3D 37 BB522
Contextual Info: a i GEC PLESSEY f e b r u a r y i 99? S E M I C O N D U C T O R S OS4280- 1.4 ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor

SG 1050

Abstract: C06 60V polysilicon fuse
Contextual Info: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells

bsim3v3

Abstract: C08p
Contextual Info: 0.7µ µm 13.5V CMOS Process ID: SE/SF [C08p] Applications Main Process Flow • High voltage interface to mixed signal • P Substrate circuits, e.g: LCD display drivers, Power • Twin Wells

ON SEMICONDUCTOR 613

Abstract: metal oxide in capacitor
Contextual Info: 0.7µ µm 5V CMOS Process ID: SA/SB [C08n] Applications Main Process Flow • Mixed signal embedded systems / • N Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.

bsim3

Abstract: mos transistor ON SEMICONDUCTOR 613
Contextual Info: 0.6µ µm 5V CMOS Process ID: SC/SD [C06] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.

TC93A02AFUG

Abstract: CD Pick-Up head CD Laser pickup HFM dvd optical pickup toshiba TC93A02 Laser Diode for dvd 400 mW DVD laser head laser diode toshiba dvd laser pickup DVD pickup circuit diagram
Contextual Info: TOSHIBA TC93A02AFUG TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC93A02AFUG High-Frequency Modulation IC for Laser Diode TWIN VLD The TC93A02AFUG is a high frequency modulation IC for laser diode. This product is designed for PUH(Pick-Up Head) of

CD Pick-Up head

Abstract: TC93A02FUG TC93A02 CD Laser pickup HFM *TC93A02 dvd optical pickup toshiba DVD laser head Laser Head for CD DVD tc93a pickup HFM
Contextual Info: TOSHIBA TC93A02FUG TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC93A02FUG High-Frequency Modulation IC for Laser Diode TWIN VLD The TC93A02FUG is a high frequency modulation IC for laser diode. This product is designed for PUH(Pick-Up Head) of

32KxB

Contextual Info: '•HYUNDAI HY62255BSeries 32KxB-bit CMOS SHAM PRELIMINARY DESCRIPTION The HYB2256B is a high-speed, law power and 32.7BS x B-bils CMOS static RAM fabricated using Hyundai's high performance twin lub CMOS process technology. This high reliability process coupled with innovative circuit

2P4M P 82

Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Contextual Info: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um

TRANSISTOR 545

Contextual Info: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel

HY6264A

Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Contextual Info: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit