Untitled
Abstract: No abstract text available
Text: 6 4 K x 1 Radiation-Hard Static RAM FEATURES □ 64 K x 1 R a d ia tio n -H ard Static R A M w ith S e p a ra te I/O , C h ip Select P o w erd o w n □ A d d r e s s A c c e ss Tim e: < 50 n s at 8 0 GC □ T o tal D ose: 2 1 0 6 R a d s S i0 2 □ D o se R a te U p se t: 2 1 0 5 R a d s ( S i ) / s
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24-pin
L7CX187
L7CX187HC50
L7CX187HM50
L7CX187HME50
MIL-STD-883
L7CX187HMB50
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Untitled
Abstract: No abstract text available
Text: x 16-bit 1 Megabit 64K LMM624 Static RAM Module DESCRIPTION FEATURES U 1 M egab it (6 4 K x 16-b it) Static R A M M od ule □ U tilizes 16 L 7 C 1 8 7 6 4K x 1 Static RAM s □ A d v a n c e d C M O S T e ch n o lo g y □ H ig h S p eed , L o w P o w e r
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16-bit)
LMM624
LMM624
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC at.E D • S5b5TQS O O O U O b 2 ■ T -9 é ~ 2 3 -a sr 64K x 1 Radiation-Hard Static RAM FEATURES □ 64K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Access Time: £ 5 0 n sat8 0 °C □ Total Dose: £10* Rads Si02
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L7CX187
L7CX187
X187-A
t-46-23-05
24-pln
L7CX187HC50
L7CX187HM50
L7CX187HME50
L7CX187HMB50
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC SbE D • 5Sfc>ST05 Q D Q i n b 7 ■ T-46-23-14 1 Megabit 128K x 8-bit Static RAM Module DESCRIPTION FEATURES □ 1024K (128K x 8-bit) Static RAM Module Q Advanced CMOS Technology □ High Speed — to 25 ns worst-case □ Low Power Operation
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PDF
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T-46-23-14
1024K
IDT8M824S
32-pin
LMM824
LMM824
L7C199
DG01S01
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Untitled
Abstract: No abstract text available
Text: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er
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OCR Scan
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PDF
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LMM624
16-bit)
L7C187
IDT7M624S
40-pin
LMM624
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Untitled
Abstract: No abstract text available
Text: 1 Megabit 128K x 8-bit Static RAM Module DESCRIPTION FEATURES □ 1024K (128K x 8-bit) Static RAM M odule □ A d v a n ce d CM OS T echnology □ H igh Speed — to 25 n s w orst-case □ Low Pow er O peration Active: 550 m W Standby: 20 m W typical □ Single 5 V (±10%) Pow er Supply
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OCR Scan
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1024K
IDT8M824S
32-pin
LMM824
L7C199
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Untitled
Abstract: No abstract text available
Text: 256K 64K x 4-bit Static RAM Module DESCRIPTION FEATURES □ 2 5 6K (64K x 4-bit) Static RAM Module □ Advanced CMOS Technology □ High Speed — to 15 ns worst-case □ Low Power Operation Active: 900 mW Standby: 30 mW typical □ Single 5 V (±10%) Power Supply
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OCR Scan
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PDF
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TheLMM456
a256K
L7C187
LMM456
456-B
LMM456SC45
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TWVAV
Abstract: LMM456SC45
Text: LMM456 256K 64K x 4-bit Static RAM Module FEATURES _ □ 256K (64K x 4-bit) Static RAM Module □ Advanced CMOS Technology □ High Speed — to 15 ns worst-case □ Low Power Operation Active: 900 mW Standby: 30 mW typical □ Single 5 V (±10%) Power Supply
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OCR Scan
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PDF
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LMM456
IDT7MP456
28-pin
TheLMM456
a256K
as64Kx
L7C187
LJVIM400
LMM456SC45
TWVAV
LMM456SC45
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sidebraze
Abstract: No abstract text available
Text: 256K x 1 Radiation-Hard Static RAM DESCRIPTION FEATURES □ 256K x 1 Radiation-H ard Static RAM with Separate I/O , Chip Select Pow erdow n □ A ddress A ccess Time: < 50 ns at 80°C □ Total Dose: 2 1 0 6 Rads Si02 □ Dose Rate U pset: □ Dose Rate Survivability:
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L7CX197
L7CX197HC50
L7CX197HM50
L7CX197HME50
MlL-STD-883
sidebraze
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