vsb3200
Abstract: vsb320
Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b
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Original
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PDF
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TY045S200S6OT
TY054S200S6OT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vsb3200
vsb320
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VSB2200S
Abstract: No abstract text available
Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b
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Original
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PDF
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TY045S200S6OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VSB2200S
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vsb3200
Abstract: VSB2200S V30200C VSB3200S
Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b
|
Original
|
PDF
|
TY045S200S6OT
TY054S200S6OT
11-Mar-11
vsb3200
VSB2200S
V30200C
VSB3200S
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