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    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    death metal diagram

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 11-Mar-11 death metal diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF