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    U C TRANSISTOR Search Results

    U C TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    U C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tda120XX

    Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
    Text: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications


    Original     		PDF -TDA110XX/N1F -TDA120XX/N1F UOCIII-TDA110XX-120XX/N1F tda120XX sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1

    mj3001

    Abstract: No abstract text available
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u


    Original     		PDF MJ2501 MJ3001 MJ3001. mj3001

    2SC4112

    Abstract: 2018a 2SA1581
    Text: 2SC4112 N P N /W Epitaxial Plana» S ilico n Transistors jo’ ba S w itc h in g A pp lication s 2SA1581 w ith Bias Resistance lEiaa A pplications . Switching c i r c u i t , in v e rte r c i r c u i t , in te rfa c e c i r c u i t , d riv e r c ir c u it


    OCR Scan     		PDF 201BA 10ttA 100uA 10biA 2SA1581 2SC4112 2SA1S81CPNP) 2SC4112< 1107TAfTS 2018a

    FZT951

    Abstract: FZT953 NS BR 1010
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS_ FZT951 FZT953 PROVISIONAL DATA FEATURES * 5 A C O N T IN U O U S C O LL EC T O R C U R R E N T * U P T O 15A P E A K C O LL E C T O R C U R R E N T * V E R Y L O W S A T U R A T IO N V O L T A G E S


    OCR Scan     		PDF OT223 FZT951 FZT953 -100mA, -10mA* -100mA* -200mA* -400mA -10mA, NS BR 1010

    npn transistors,pnp transistors

    Abstract: J.BC211 BC211 transistor amplifier VHF/UHF 2N918 J 2N918
    Text: A C T IV E C O M P O N E N T S FOR H Y B R ID C IR C U IT S C O M P O S A N T S A C T IF S P O U R C IR C U IT S H Y B R ID E S Silicon NPN transistors V H F-U H F amplification and oscillation chip Transistors N P N silicium, amplification et oscillation V H F -U H F (pastille)


    OCR Scan     		PDF 2N918 BC211 npn transistors,pnp transistors J.BC211 BC211 transistor amplifier VHF/UHF 2N918 J 2N918

    gt73

    Abstract: LS T73
    Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT720 ISSUE 1 - SEPTEMBER 1998_ FEATU RES * 500mW POWER DISSIPATION * * * * 1A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 1A (p u lsed )


    OCR Scan     		PDF Super323TM OT323 ZUMT720 500mW 240mi> 750mA Collecto510 100MHz gt73 LS T73

    2SB1450

    Abstract: No abstract text available
    Text: SAfiYO Power Transistor S u r f a c e M o u n t P a c k a g e S M P S u r f a c e M o u n t Po w er In recent y e a r s s u r f a c e mou nt s e m i c o n d u c t o r products have found wide application from small-signal co nsumer equipment to h i g h - p o w e r industr ia l equipment.


    OCR Scan     		PDF T941226TR 2SB1450

    Untitled

    Abstract: No abstract text available
    Text: KSC1730 NPN EPITAXIAL SILICON TRANSISTOR TV VHF, UHF TUNER OSCILLATOR • H igh C u rre n t G a in B a n d w id th P ro d u c t fj= 1 1 0 0 0 M H z • O u tp u t C a p a c ita n c e C ob=1 -5pF M ax ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol


    OCR Scan     		PDF KSC1730

    kta1013

    Abstract: TIC 160 VCEO160V
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.


    OCR Scan     		PDF VCEO-160V KTA1013 Ta-25Â 500mA, 200mA 92MOD kta1013 TIC 160 VCEO160V

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 1147 A ISSUE 1 - JANUARY 1997_*" FEATURES * V c e o = -12V * 4 A m p C o n tin u o u s C u rre n t * 2 0 A m p p u ls e C u rre n t * L o w S a tu ra tio n V o lta g e


    OCR Scan     		PDF ti516) Ti7057fl

    CERAMIC FLATPACK

    Abstract: BA 4915 DIODE S4 53 ceramic DIL 14 pin transistor mj 4035 BAT22 BAT22J BAT24H BAT26 BAT28H
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Pin Configuration n-p-n C p-n-p B C IU J ’m□ ‘Ù C E m u u E u B u: C CL □ B O T ba 1U E □ _□ _ □ O U E B B Û T m□ □ LJ D 14 Lead DIL 4915 N-channel o2 s2 f i f i


    OCR Scan     		PDF BAT28H 100mA 200mA 100fi BAT22 BAT22J BAT24H BAT26 BAT22, CERAMIC FLATPACK BA 4915 DIODE S4 53 ceramic DIL 14 pin transistor mj 4035

    Untitled

    Abstract: No abstract text available
    Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )


    OCR Scan     		PDF Super323TM OT323 ZUMT619 500mW 160mQ 100MHz

    TLP331

    Abstract: No abstract text available
    Text: GaAs IRED & PHOTO-TRANSISTOR TLP331,332 TLP331 U nit in mm OFFICE M A C H IN E H O U S E H O LD USE E Q U IP M E N T P R O G R A M M A B L E C O NTROLLERS A C /D C -IN P U T M O D U L E T E L E C O M M U N IC A T IO N The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide


    OCR Scan     		PDF TLP331 TLP331) TLP332

    2sc3203

    Abstract: 2sa1271
    Text: 2SA127I SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS APPLICATIONS • Low F r e q u e n c y P o w e r A m p l if i e r s (B -C lass P u sh -p u ll, P o = l W ) ■ General P u r p o s e S w i t c h i n g C i r c u i t s FEATURES • Excellent h FE v s .


    OCR Scan     		PDF 2SA127I 600mW, 800mA 500mA, 2SC3203 --35V, 100mA -700m 2sc3203 2sa1271

    DTC115UK

    Abstract: DTC115UU
    Text: DTC115UU/DTC115UK / T ransistors D T C 1 1 5 U U / D T C 1 1 5 U K Digital Transistors Includes Resistors h ÿ > v 7* ^ y ^-/Transistor Switch • • tm Dimensions (Unit : mm) m # ^ )0 2) » f li f f it f ilc J : U tS /S L , S ë ± C 7 7 ' f V U - ' > a >


    OCR Scan     		PDF DTC115UU/DTC115UK DTC115U DTC115UU/DTC115U DTC115UK DTC115UU

    L25-M

    Abstract: l25m BUT 1 BUT12
    Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse


    OCR Scan     		PDF BUT12/12 O-220 100mA, L25-M l25m BUT 1 BUT12

    T-10901

    Abstract: M105 SD1527-08 SD1527-8 1090mhz 253c S88SC TACAN transistor 1030-1090MHz
    Text: H / f llr f/C f « i n 11mI P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive m u i u y u M i c i yville, v m c , PA i 18936-1013 i u j j u ivi»* Montgomery Tel: 215 631-9840 ä - r m b U n - r « l5 z 7 - 0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS


    OCR Scan     		PDF 1030-1090MHz 960-1215MHZ SD1527-08 SD1527-8 SD1527-8 S88SCI527 S88Sr> T-10901 M105 1090mhz 253c S88SC TACAN transistor 1030-1090MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 Q FEATURES * S u ita b le fo r AF d riv e rs and o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat C O M PLEM ENTARY TYPE BCP55 PARTM ARKING DETAILS - BCP52 B C P 5 2 - 10


    OCR Scan     		PDF OT223 BCP55 BCP52 -10DpA -500m -150m

    KTA950

    Abstract: ktc2120 C 2120 Y NPN transistor KTC 200
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE POT PROCESS KTC 2120 APPLICATIONS I Low F r e q u e n c y P o w e r A m p lifie rs ( B - C la s s P u s h - p u l l , P o = lW ) I General P u r p o s e S w itc h in g C i r c u its FEATURES »Excellent Ii f e


    OCR Scan     		PDF 600mW, 800mA 500mA, IB-20mA Ta-25Â 100mA 700mA Ic-500mA, KTA950 ktc2120 C 2120 Y NPN transistor KTC 200

    2N3800

    Abstract: 2N3805 2N3726 2N3729 2N3804 2N3804A 2N2978 2n3423 2N3803 2N3812
    Text: Discrete Devices Transistors Cont. Differential and Dual Amplifiers (C ony_ u r i a u i c i c A m bien t P q Type Polarity One Both Side Sides mW mW V c E (S a t) @ Ic / lß Hf e @ 'C VCB VCE Tracking Electrical Characteristics @ 25° C (One Side) M axim u m Ratings


    OCR Scan     		PDF 2n2977 to-71 2n2978 2n2979 2n2980 to-78 2N3800 2N3805 2N3726 2N3729 2N3804 2N3804A 2n3423 2N3803 2N3812

    BSW68

    Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
    Text: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.


    OCR Scan     		PDF T0220SM 0220M BSS44 BSV64 BSW66A BSW67A BSW68 BSW68A BSX62 BSX63 2N3055 mj2955 50004 2N3440 ST bdy90

    ve90

    Abstract: CM 3258
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT FZT849 HIGH PERFORMANCE TRANSISTOR IS S U E 3 - J A N U A R Y 1996 - FEAT U R ES * E x tre m e ly lo w e q u iv a le n t on -re sistan ce ; R c E(M,|36m i2 a t 5 A * 7 A m p c o n tin u o u s c o lle c to r cu rre n t (20 A m p peak)


    OCR Scan     		PDF OT223 FZT849 FZT949 FZT849 50MHz ve90 CM 3258

    UPA102G

    Abstract: 8108T PC2768G 2757T PC2766 UPC2798GR
    Text: Configuration Drawings Frequency Downconverters U P C 2731G S ose UPC1685G U PC1686G U PC1687G U PC 2721G R U PC2722G R Coupling ose (Feedback) ose (Bypass) (Bypass) U PC2734G R U PC2753G R U P C 2743G S /44G S E E E _n= E E r E E E E E U PC2768G R U P C 2756T


    OCR Scan     		PDF UPC2731GS UPC1685G UPC1686G UPC1687G UPC2721GR UPC2722GR PC2734G 2743G PC2753G PC2768G UPA102G 8108T 2757T PC2766 UPC2798GR

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - JUNE 94 FEATURES * 2 A m p s c o n tin u o u s c u rre n t * U p to 5 A m p s p eak c u rre n t * V e ry lo w s a tu ra tio n v o lta g e * E x c e lle n t g a in ch a ra c te ris tics up to 2 A m p s


    OCR Scan     		PDF 50MHz -100mA 100mA, 300ns. ZTX956