Untitled
Abstract: No abstract text available
Text: D4KB05 thru D4KB10 GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT BRIDGE RECTIFIERS - 50 to 1000Volts - 4.0 Amperes D3K FEATURES ● Glass passivated chip junction .057 1.45 R2 ● High case dielectric strength .130(3.3) .114(2.9) .110(2.8) .094(2.4) .555(14.1)
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D4KB05
D4KB10
1000Volts
UL-94
22-Aug-2013
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Untitled
Abstract: No abstract text available
Text: D4KB05 thru D4KB10 GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT BRIDGE RECTIFIERS - 50 to 1000Volts - 4.0 Amperes D3K FEATURES ● Glass passivated chip junction .057 1.45 R2 ● High case dielectric strength .130(3.3) .114(2.9) .110(2.8) .094(2.4) .555(14.1)
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D4KB05
D4KB10
1000Volts
UL-94
30-Dec-2011
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TLMG1100-GS08
Abstract: TLMP1100-GS08 TLMO1100-GS08 TLMG1100GS08
Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based
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TLMS1100,
TLMO1100,
TLMY1100,
TLMG1100,
TLMP1100,
TLMB1100
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
TLMG1100-GS08
TLMP1100-GS08
TLMO1100-GS08
TLMG1100GS08
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Untitled
Abstract: No abstract text available
Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based • Temperature range -40 °C to +100 °C
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TLMS1100,
TLMO1100,
TLMY1100,
TLMG1100,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based
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TLMS1100,
TLMO1100,
TLMY1100,
TLMG1100,
TLMP1100,
TLMB1100
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based
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TLMS1100,
TLMO1100,
TLMY1100,
TLMG1100,
TLMP1100,
TLMB1100
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Z-Power LED X10490 Technical Data Sheet Specification UPGT801-S SSC Drawn Approval CUSTOMER Approval Rev. 00 September 2010 www.seoulsemicon.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet UPGT801-S 1. Features 2. Absolute Maximum Ratings
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X10490
UPGT801-S
SSC-QP-7-07-24
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Transient voltage suppressors
Abstract: DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A
Text: 1.5KE6.8 thru 1.5KE440CA and 1N6267 thru 1N6303A Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 440V Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 1500W peak pulse power capabililty on 10/1000us waveform,
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5KE440CA
1N6267
1N6303A
10/1000us
265oC/10
MIL-STD-750,
Transient voltage suppressors
DIODE 1n6294a
diode 1n6285A
1N6275 1,5ke15
diode 1n6278A
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Untitled
Abstract: No abstract text available
Text: Z-Power LE DX10490 Technical Data Sheet Spe cifica t ion UPGT8 0 1 - S SSC Drawn Approval CUSTOMER Approval Re v. 0 0 Se pt e m be r 2 0 1 0 w w w .se oulse m icon .com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LE DX10490 Technical Data Sheet UPGT8 0 1 - S
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X10490
SSC-QP-7-07-24
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MB88F332
Abstract: apix IC201-001 CU80F Cu80 FPT-208P-M06 MB88F33
Text: FUJITSU SEMICONDUCTOR MB88F332 FLASH Memory Product Parallel Writer Specification Ver.1.0 FUJITSU MICROELECTRONICS LIMITED 【Revision History】 Ver. 1.0 Data 2008/12/16 Description First Editinon 【Overview】 Items Detail Product name MB88F332 FLASH memory size
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MB88F332
160KB
58000H
FPT-208P-M06
IC201-001
CU80F
MB88F332
apix
IC201-001
CU80F
Cu80
FPT-208P-M06
MB88F33
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HALL 550
Abstract: 550 WG9 signal hall sensor 550 wg9
Text: EW-450, EW-550 UNIPOLAR HALL EFFECT SWITCHES Note : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ASAHI HALL EFFECT ICs ASAHI KASEI ELECTRONICS Hall Effect ICs are composed of a Ultla-high sensitive InSb Hall element and a signal processing IC
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EW-450,
EW-550
EW-450
EW-550
500pcs
EW-450
5000pcs
HALL 550
550 WG9
signal hall sensor 550 wg9
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ISSUE* -JUNE 1996_ O_ C O M PLEM EN TA R Y T Y P E - BSR40 PARTM ARKIN G D E T A IL - BR1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage
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BSR30
BSR40
-150mA,
-15mA
-500mA,
-50mA
-100nA,
-100mA,
-500mA
-50mA,
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KBU401
Abstract: KBU402 KBU403 KBU404 KBU405 KBU406 KBU407
Text: FCI Semiconductor Preliminary Data Sheet KBU401.407 series 4.0 AMP Single Phase Silicon Bridge Mechanical Dimensions Description KBU401.407 series KBU401.407 series .280 •260 .205 .106 —II-.0S2 Features O O O O O Compact Size Low Leakage Low Cost Construction
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KBU401.
KBU401
KBU402
KBU403
KBU404
KBU405
KBU406
KBU407
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Untitled
Abstract: No abstract text available
Text: B 41 554 Capacitors with Screw Terminals SIKOREL 125, LL Grade Maximum reliability For highly professional switch-mode power supplies and capacitor banks Operating temperatures up to 125 °C Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve
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KAL0272-T
fl23SL
007421D
fl235b05
D074211
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BS208
Abstract: MB8075
Text: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.
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BS208
aTO-92
MB8075
iz7os34
003L011
BS208
MB8075
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55461HM
Abstract: 55461RM 75461RC 75461TC 55461 75461 fairchild 55461 c
Text: 55/75460 • 55/75461 • 55/75462 55/75463 • 55/75464 DUAL HIGH VOLTAGE HIGH CURRENT'PERIPHERAL DRIVERS FAIRCHILD LINEAR I N T E G R A T E D CI RC UIT S G E N E R A L D E S C R IP T IO N — The 5 5 /7 5 4 6 0 Peripheral Driver Series converts T T L and D T L logic levels to H IG H voltage, H IG H current levels. The
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VS-10
55461HM
55461RM
75461RC
75461TC
55461
75461 fairchild
55461 c
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Untitled
Abstract: No abstract text available
Text: • International Rectifier Data Sheet No. PD-6.078 IR 04 H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation
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IR0430
5M-1982.
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75462TC
Abstract: 75462 55462HM 75462HC 75462RC 55462
Text: 55/75460 • 55/75461 • 55/75462 55/75463 • 55/75464 DUAL HIGH VOLTAGE HIGH CURRENT'PERIPHERAL DRIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — The 5 5 /7 5 4 6 0 Peripheral Driver Series converts T T L and D T L logic levels to H IG H voltage, H IG H current levels. The
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Lpp 97
Abstract: transil 428 54-135
Text: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60
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CB-33)
Lpp 97
transil 428
54-135
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s51 Optocoupler
Abstract: LA12 NSL-32 500AH NSL32
Text: NSL-32 i|LON€X Optocoupler Features * * * 5.7 nin. Compact, moisture resistant package Low LED current Passive resistance output 25A min. Anode lead 0.25x0.51 Photocell 2.54 Description This optocoupler consists o f a r LED input optically coupled to a photocell. The photocell resistance is
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NSL-32
26CTC
100Kii
514-75B-ADD0
5K-76S-SSB9
s51 Optocoupler
LA12
NSL-32
500AH
NSL32
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N5L-32B-100
Abstract: Photocell LA12 NSL-32B-102 NSL-32B-103 NSL-32B-104
Text: N5L-32B-100 Series SÏLONEX Opto couplers Features * * * Compact, moisture resistant package Low LED current Passive resistance output Description This optoccupler consists o f a r LED input optically coupled to a photocell. The photocell resistance is high when the LED current is "off: and low 'Mien the
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N5L-32B-100
26CTC
NSL-32B-1Q1
NSL-32B-102
NSL-32B-103
NSL-32B-104
514-75B-ADD0
5K-76S-SSB9
Photocell
LA12
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SC08-11HWA
Abstract: SA08-11 SC08-13 "pin compatible" FX08-11EWA 12EWA SA08-11HWA LT/SG3527A SA08-12 SA08-13 SC08-11
Text: 20mm 0.8INCH SINGLE DIGIT NUMERIC DISPLAYS SA08-11 SC08-11 SA08-12 SC08-12 SA08-13 . SC08-13 SA08-21 SC08-21 FX08-11 Features Description •0.8 INCH DIGIT HEIGHT. The Bright Red source color devices are made with Gallium •LOW CURRENT OPERATION. Phosphide Red Light Emitting Diode.
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SA08-11
SC08-11
FX08-11
SA08-12
SC08-12
SA08-13
SC08-13
SA08-21
SC08-21
SA08-1
SC08-11HWA
SC08-13 "pin compatible"
FX08-11EWA
12EWA
SA08-11HWA
LT/SG3527A
SA08-13
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transistor c925
Abstract: DIODE C921
Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
-10ns
D020717
SMD-220
C-928
transistor c925
DIODE C921
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2SD1378
Abstract: No abstract text available
Text: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „
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2SD1378
2SB1007.
2SD1378
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