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    UES1103 Price and Stock

    Microchip Technology Inc UES1103

    DIODE GEN PURP 150V 2.5A AXIAL
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    DigiKey UES1103 Bulk 109 1
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    Microchip Technology Inc UES1103SM

    DIODE GEN PURP 150V 2.5A A-MELF
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    Microchip Technology Inc UES1103SM 1,890 24 Weeks
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    NAC UES1103SM 17
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    Microchip Technology Inc UES1103E3

    DIODE GEN PURP 150V 2.5A A AXIAL
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    Microchip Technology Inc UES1103-TR

    DIODE GEN PURP 150V 2.5A
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    DigiKey UES1103-TR Reel 100
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    Microchip Technology Inc UES1103SME3

    DIODE GP 150V 2.5A A SQ-MELF
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    UES1103 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UES1103 Central Semiconductor DOIDE ULTRA FAST RECOVERY RECTIFIER 3A 2DIE Original PDF
    UES1103 BKC International 2.5 Amp Voidless Fast Switching Rectifiers, Hard Glass Tungsten Scan PDF
    UES1103 Microsemi Rectifier Scan PDF
    UES1103 Microsemi Rectifiers, High Efficiency, 2.5A Scan PDF
    UES1103 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    UES1103 Unitrode International Semiconductor Data Book 1981 Scan PDF
    UES1103TR Microsemi DIODE ULTRA FAST RECOVERY RECTIFIER 150V 2.5A 2A T/R Scan PDF

    UES1103 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UES1103SM

    Abstract: No abstract text available
    Text: ISCFdÈOjAXOjAX text/html About News Contact keyword search: UES1103SM #16638 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 150 V Max Forward Surge Current


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    UES1103SM 100ns) TR7\1500cntTR7 UES1103SM PDF

    Untitled

    Abstract: No abstract text available
    Text: UES1103 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.5 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage975m @I(FM) (A) (Test Condition)2.0


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    UES1103 Voltage150 Time25n Voltage975m Current50u PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UES1101 UES1103 2.5A HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS Rating Symbol UES1101 UES1102 UES1103 Peak inverse voltage VR 50 100 150 Maximum average DC output at TL = 75°C, L = 3/8” IO 2.5 A Non-repetitive surge current at 8.3ms


    Original
    UES1101 UES1103 UES1102 MIL-PRF-19500, PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


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    10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200 PDF

    CTX12S

    Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40


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    SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 16CTQ100S CTX12S CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S PDF

    BYV27-50

    Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
    Text: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.


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    UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1X02 UES1103 BYV27-150 UES1100 PDF

    Untitled

    Abstract: No abstract text available
    Text: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


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    UESI101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 100ms PDF

    BKC Semiconductors

    Abstract: DSAIH0002563 UES1101
    Text: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.


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    UES1101 UES1103 UES1101 UES1103 117H33 BKC Semiconductors DSAIH0002563 PDF

    UES1102

    Abstract: UES1101 DO-213AB UES1103 BKC Semiconductors
    Text: 2.5 Amp Voidless Fast Switching Rectifiers UES1101 thru Applications UES1103 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are irnportant. They ar$ i# a i tor use in industrial, aircraft or satellite p d v^ ^ yj^ lies.


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    UES1101 UES1103 UES1101 UES1102 UES1103 LL-41 DO-213AB) DO-213AB BKC Semiconductors PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are


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    UESI102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 UES1102 PDF

    BKC Semiconductors

    Abstract: No abstract text available
    Text: 2.5 Amp Voidless Fast UES1101 Switching Rectifiers thru UES1103 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.


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    UES1101 UES1103 con33 UES1101 UES1102 LL-41 DO-213AB) BKC Semiconductors PDF

    UES1101SM

    Abstract: No abstract text available
    Text: SURFACE MOUNT RECTIFIERS UES1101SM UES1102SM UES1103SM High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the UES1101SM series is specifically designed for surface mount applications when board space and surface


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    UES1101SM UES1102SM UES1103SM UES1101SM 25nSec) ES1101SM UES11Q2SM PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP 9347963 T2 UNITRODE Ï F | i 3 4 7 c t,3 0011370 D 92D CORP 11378 UES1101SM UES1102SM UES1103SM 7 -6 ì - 17 SURFACE MOUNT RECTIFIERS High Efficiency, 4.0A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the U ES1 101SM series is


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    i347c UES1101SM UES1102SM UES1103SM 101SM 25nSec) 101SM ES1102SM ES1103SM PDF

    BYV27-100

    Abstract: BYV27-150 BYV27-50 UES1101 BYV27 UES1102 UES1103 UES1100
    Text: BYV27-50 BYV27-100 BYV27-150 RECTIFIERS High Efficiency, 2.5A U ESI 101 U ESI 102 UES1103 FEATU RES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


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    BYV27-50 BYV27-100 BYV27-150 UES1103 UES1101 25Vdc BYV27 UES1102 UES1103 UES1100 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ discrete devices jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 RECTIFIERS High Efficiency, 2.5A ELECTRICAL SPECIFICATIONS Maximum Forward Voltage @ Maximum Reverse Current @ ,975V UES1102 UES1103 10 0V @ 2A @ 2A 1 5 0V tp = 3 0 0 jiS tp = 3 0 0nS 11


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    UES1102 UES1103 UES1104 UES1105 UES1106 UES1301 UES1302 UES1303 300jiS UES1304 PDF

    8603

    Abstract: JANS1N5806US JANTXV1N5806 JANTX1N5806 JANS1n5806
    Text: Microsemi Ultra Fast Rectifiers i Microsemi Division Type Package Outline v : , 13 A A A SQ. MELF A A S Q . MELF A A S Q . MELF A A S Q . MELF A A SQ. MELF A A SQ. MELF POWERMITE E E SQ. MELF E SQ . MELF E E S Q . MELF E E SQ. MELF A DO-201 AD DO-215AA DO-214BA


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    DO-201 DO-215AA DO-21430 8603 JANS1N5806US JANTXV1N5806 JANTX1N5806 JANS1n5806 PDF

    UES1102

    Abstract: unitrode BYV27-100 BYV27-150 UES1101 UES1101-UES1103 UES1103 BYV27 BYV27-50 UES1100
    Text: RECTIFIERS BYV27-50 BYV27-100 BYV27-150 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast


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    BYV27-50 BYV27-100 BYV27-150 UES1103 UES1101 UES1102 unitrode UES1101-UES1103 UES1103 BYV27 UES1100 PDF