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    UGF09030F Search Results

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    UGF09030F Price and Stock

    Cree, Inc. UGF09030F

    MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) - Datasheet Reference
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UGF09030F 126
    • 1 $42.185
    • 10 $42.185
    • 100 $37.3175
    • 1000 $35.695
    • 10000 $35.695
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    UGF09030F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF09030F Cree FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UGF09030F Datasheets Context Search

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    UGF09030P

    Abstract: UGF09030F 110MIL
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. MRF9030 26VDC, 945MHz, UGF09030F 400mA 940MHz IS-97 UGF09030P UGF09030F 110MIL

    Untitled

    Abstract: No abstract text available
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030

    Untitled

    Abstract: No abstract text available
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF09030F UGF09030