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Cree, Inc. UGF09030F MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	UGF09030F		126			1 $42.185 10 $42.185 100 $37.3175 1000 $35.695 10000 $35.695	Buy Now

UGF09030 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UGF09030		Cree	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET		Original	PDF
UGF09030F		Cree	FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
UGF09030P		Cree	FET Transistor, 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF09030 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ultrarf Abstract: No abstract text available Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF09030 800MHz 1000MHz. MRF9030 870MHz CDMA2000: 350mA ultrarf
UGF09030P Abstract: UGF09030F 110MIL Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF09030 800MHz 1000MHz. MRF9030 26VDC, 945MHz, UGF09030F 400mA 940MHz IS-97 UGF09030P UGF09030F 110MIL
Untitled Abstract: No abstract text available Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030
Untitled Abstract: No abstract text available Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF09030F UGF09030
Untitled Abstract: No abstract text available Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF09030 800MHz 1000MHz. MRF9030 870MHz UGF9030F CDMA2000: 350mA
cree MOS Abstract: MRF9030 UGF09030 UGF09030P UGF9030F UGF9030P Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030 cree MOS MRF9030 UGF09030P UGF9030F UGF9030P
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	PDF	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b