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    Untitled

    Abstract: No abstract text available
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030

    Untitled

    Abstract: No abstract text available
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. MRF9030 870MHz UGF9030F CDMA2000: 350mA

    cree MOS

    Abstract: MRF9030 UGF09030 UGF09030P UGF9030F UGF9030P
    Text: UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09030 800MHz 1000MHz. 870MHz MRF9030 CDMA2000: UGF9030F UGF09030 cree MOS MRF9030 UGF09030P UGF9030F UGF9030P