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    UGF19125F Search Results

    UGF19125F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF19125F Cree FET Transistor, 125W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UGF19125F Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original     		UGF19125 1955MHz, 1965MHz f1-10MHz 10MHz) -43dBc 1300mA UGF19125 PDF

    UGF19125

    Abstract: UGF19125F UGF19125P
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original     		UGF19125 1955MHz, 1965MHz f1-10MHz 10MHz) -43dBc 1300mA 28VDC, 1960MHz UGF19125 UGF19125F UGF19125P PDF

    50 watts amplifier 10mhz

    Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original     		UGF19125 MRF19125/MRF19125S. UGF19125 50 watts amplifier 10mhz 10mhz mosfet Cree Microwave UGF19125F UGF19125P PDF