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    UGF2005P Search Results

    UGF2005P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF2005P Cree FET Transistor, 5W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: UGF2005 5W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 5W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier


    Original     		PDF UGF2005 UGF2005F UGF2005P UGF2005-178 UGF2005

    UGF2005

    Abstract: UGF2005-178 UGF2005F cree rf UGF2005P
    Text: UGF2005 5W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 5W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier


    Original     		PDF UGF2005 UGF2005F UGF2005P UGF2005-178 UGF2005 UGF2005-178 UGF2005F cree rf UGF2005P