UGF21060 Search Results

UGF21060 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UGF21060		Cree	60W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET		Original	PDF
UGF21060		Cree	LDMOS FETs in Class AB Operation 2.1 GHz Cellular		Original	PDF
UGF21060F		Cree	FET Transistor, 60W, 2.17GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
UGF21060P		Cree	FET Transistor, 60W, 2.17GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF21060 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor 10mhz 60w Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	PDF	UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf
Cree Microwave Abstract: UGF21060 UGF21060F UGF21060P Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	PDF	UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P
ultrarf Abstract: 30WPEP MRF21060 UGF21060 16DPCH Text: UGF21060 60W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.11 to 2.17 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF21060 MRF21060 700mA) ultrarf 30WPEP MRF21060 UGF21060 16DPCH
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	PDF	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b