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    UGF21125 Search Results

    UGF21125 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF21125 Cree LDMOS FETs in Class AB Operation 2.1 GHz Cellular Original PDF

    UGF21125 Datasheets Context Search

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    PN channel MOSFET 10A

    Abstract: Cree Microwave UGF21125
    Text: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in


    Original     		PDF UGF21125 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21125 PN channel MOSFET 10A Cree Microwave

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		PDF BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b