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    UIS TEST Search Results

    UIS TEST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSCTESTBDV1P0 Renesas Electronics Corporation SSC Test Board Visit Renesas Electronics Corporation
    FO-62.5LPBMT0-001 Amphenol Cables on Demand Amphenol FO-62.5LPBMT0-001 MT-RJ Connector Loopback Cable: Multimode 62.5/125 Fiber Optic Port Testing .1m Datasheet
    FO-9LPBMTRJ00-001 Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m Datasheet
    SF-SFP28LPB1W-3DB Amphenol Cables on Demand Amphenol SF-SFP28LPB1W-3DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 3dB Attenuation & 1W Power Consumption Datasheet
    FO-50LPBMTRJ0-001 Amphenol Cables on Demand Amphenol FO-50LPBMTRJ0-001 MT-RJ Connector Loopback Cable: Multimode 50/125 Fiber Optic Port Testing .1m Datasheet

    UIS TEST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    912 MOSFET

    Abstract: DOC-70 AN601
    Text: VISHAY SILICONIX Power MOSFETs Application Note 912 Power MOSFET in UIS/Avalance Applications By Kandarp Pandya Inductive loads require adequate attention in electronic control circuits, since otherwise they can lead to unclamped inductive switching UIS or avalanche conditions, which


    Original     		PDF SQM110N04-03 AN601 22-Dec-08 912 MOSFET DOC-70 AN601

    RFP70N06

    Abstract: AN9322 AVALANCHE TRANSISTOR
    Text: Harris Semiconductor No. AN9322.1 Harris Power MOSFET January 1996 A Combined Single Pulse and Repetitive UIS Rating System Author: Wallace D. Williams the +25oC line, the application is beyond the UIS rating of the device and the user stands a risk of device failure. If the


    Original     		PDF AN9322 1-800-4-HARRIS RFP70N06 AVALANCHE TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN4034SSS ADVANCE INFORMATION 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance


    Original     		PDF DMN4034SSS AEC-Q101 DS32106

    SiR642DP

    Abstract: SIR642
    Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		PDF SiR642DP SiR642DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR642

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		PDF SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68mΩ @ VGS= 10V 5.6A 


    Original     		PDF DMN6068SE AEC-Q101 DS32033

    Untitled

    Abstract: No abstract text available
    Text: DMJ7N70SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS • 100% Unclamped Inductive Switch (UIS) test in production  Low Gate Input Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 


    Original     		PDF DMJ7N70SK3 AEC-Q101 DS36907

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		PDF SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    g4406ls

    Abstract: g4406
    Text: DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • 100% Unclamped Inductive Switch (UIS) test in production  Low On-Resistance 11mΩ @ VGS = 10V 10.3A  Low Input Capacitance 9.3A  Fast Switching Speed


    Original     		PDF DMG4406LSS DS35539 g4406ls g4406

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68m @ VGS= 10V 5.6A 


    Original     		PDF DMN6068SE DS32033

    SQJ469EP

    Abstract: No abstract text available
    Text: SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ469EP AEC-Q101 2002/95/EC SQJ469EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ469EP

    Untitled

    Abstract: No abstract text available
    Text: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ964EP AEC-Q101 2002/95/EC SQJ964EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ964EP AEC-Q101 2002/95/EC SQJ964EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ461EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ461EP AEC-Q101 2002/95/EC SQJ461EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQS420EN AEC-Q101 2002/95/EC SQS420EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQS400EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQS400EN AEC-Q101 2002/95/EC SQS400EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQ1421EEH AEC-Q101 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQS420EN AEC-Q101 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQ1421EEH AEC-Q101 2002/95/EC OT-363 SC-70 SC-70 SQ1421EEH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		PDF SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 11-Mar-11

    SQJ401EP

    Abstract: No abstract text available
    Text: SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ401EP AEC-Q101 2002/95/EC SQJ401EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ401EP

    67401

    Abstract: No abstract text available
    Text: SQ3469EV www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		PDF SQ3469EV AEC-Q101 2002/95/EC SQ3469EV-T1-GE3 11-Mar-11 67401

    Untitled

    Abstract: No abstract text available
    Text: SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ963EP AEC-Q101 2002/95/EC SQJ963EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SQJ469ep

    Abstract: No abstract text available
    Text: SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ469EP AEC-Q101 2002/95/EC SQJ469EP-T1-GE3 11-Mar-11 SQJ469ep