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    Vishay Siliconix SIR642DP-T1-GE3

    MOSFET N-CH 40V 60A PPAK SO-8
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    SIR642DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR642DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A 8SOIC Original PDF

    SIR642DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


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    SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR642DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR642DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiR642DP

    Abstract: SIR642
    Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original
    SiR642DP SiR642DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR642 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original
    SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: XR75100 40V Synchronous Step Down COT Controller FEATURES General Description „ 20A Capable Step Down Controller † Wide 5.5V to 40V Input Voltage Range † Integrated High Current 2A/3A Drivers † 0.6 to 30V Adjustable Output Voltage „ Proprietary Constant On-Time Control


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    XR75100 200ns 100kHz 800kHz 16-pin XR75100 com/XR75100 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs


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    O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


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    SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF