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    Nexperia PESD12VS1UJ,115

    TVS DIODE 12VWM 27VC SOD323F
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    DigiKey PESD12VS1UJ,115 Digi-Reel 44,152 1
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    Mouser Electronics PESD12VS1UJ,115 13,394
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    Rochester Electronics PESD12VS1UJ,115 109,155 1
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    Avnet Silica PESD12VS1UJ,115 10 Weeks 3,000
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    EBV Elektronik PESD12VS1UJ,115 18,000 10 Weeks 3,000
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    Nexperia PESD5V0S1UJ,115

    TVS DIODE 5VWM 19VC SOD323F
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    DigiKey PESD5V0S1UJ,115 Cut Tape 4,865 1
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    PESD5V0S1UJ,115 Digi-Reel 4,865 1
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    Avnet Americas PESD5V0S1UJ,115 Reel 18,000 8 Weeks 3,000
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    Mouser Electronics PESD5V0S1UJ,115 5,134
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    Newark PESD5V0S1UJ,115 Bulk 2,449 5
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    TTI PESD5V0S1UJ,115 Reel 12,000
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    TME PESD5V0S1UJ,115 1
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    Avnet Silica PESD5V0S1UJ,115 246,000 10 Weeks 3,000
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    EBV Elektronik PESD5V0S1UJ,115 10 Weeks 3,000
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    ams OSRAM Group GF-CSBPM2.24-TNUJ-1-1-350-R33

    LED OSLON SQ SMD
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    DigiKey GF-CSBPM2.24-TNUJ-1-1-350-R33 Digi-Reel 1,620 1
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    GF-CSBPM2.24-TNUJ-1-1-350-R33 Cut Tape 1,620 1
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    L-com Inc UJ110C5E-W

    JACK CAT5E RJ45/110 WHITE
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    DigiKey UJ110C5E-W Bag 1
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    Verical UJ110C5E-W 67 7
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    Newark UJ110C5E-W Bulk 67 1
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    RS UJ110C5E-W Bulk 3 Weeks 1
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    Onlinecomponents.com UJ110C5E-W
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    L-com Inc UJ110C6-BLK

    KEYSTONE 110-RJ45 JK CAT6 BLK
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    DigiKey UJ110C6-BLK Bag 1
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    Newark UJ110C6-BLK Bulk 1
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    Find more UJ11 price and stock on Findchips.com

    UJ11 Datasheets (1)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    UJ110C6-BLU L-Com KEYSTONE 110-RJ45 JK CAT6 BLU Original PDF

    UJ11 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz


    OCR Scan     		FLM3742-25DA UJ11jU 44dBm -45dBc 32dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM10I1-8C F| .g p -,. Internally Matched Power GaAs FETs r UJ11 j U FEATURES • High Output Power: P ^ b = 38.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM10I1-8C FLM1011-8C FLM1011-8C PDF

    Untitled

    Abstract: No abstract text available
    Text: F in rrç il FLM1213-4C r UJ11 DU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM1213-4C 1213-4C PDF

    Untitled

    Abstract: No abstract text available
    Text: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		FLM5964-18DA -45dBc 5964-18D Drain-40 PDF

    5964-6D

    Abstract: No abstract text available
    Text: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		FLM5964-6D -45dBc 27dBm 5964-6D PDF

    J221

    Abstract: FMC2122LN-03
    Text: F | . S Mu. K-Band Power GaAs Modules F M C 2 1 2 2 L N - 3 j U . . r UJ11j U FEATU RES • • • • • • • High Output Power: P1CjB • 12dBm Typ. High Gain: G-j^ b = 12dB(Typ.) Low In/Out VSWR Low Noise: NF - 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz


    OCR Scan     		MC2122 12dBm FMC2122LN-03 -15dBm FMC2122LN- J221 PDF

    FLM3742-12D

    Abstract: FLM3742-12DA
    Text: F,?T<.,. FLM3742-12DA 9 r UJ11jU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 41 dBm Typ. • • • • • • High Gain: G-|dB = 11 -5clB (Typ) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz


    OCR Scan     		FLM3742-12DA 41dBm -45dBc 30dBm FLM3742-12DA FLM3742-12D PDF

    fujitsu l-band power fets

    Abstract: fujitsu gaas fet L-band
    Text: p. .<¡2 .,. FLL31OIQ-3 r UJ11 bU L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 30W Excellent Linearity Suitable for class A and class AB operation. High PAE: 40%. DESCRIPTION The FLL31 OIQ-3 is a 30 Watt GaAs FET that employs a push-pull design which


    OCR Scan     		FLL310IQ-3 FLL31OIQ-3 26dBm 24dBm fujitsu l-band power fets fujitsu gaas fet L-band PDF

    GaAs FETs

    Abstract: No abstract text available
    Text: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz


    OCR Scan     		FLM6472-8D 39dBm -45dBc 28dBm FLM6472-8D Temperature31 GaAs FETs PDF

    Untitled

    Abstract: No abstract text available
    Text: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)


    OCR Scan     		FMC141501-01 UJ11jU 31dBm FMC141501-01 12dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: F,¿¡U,. FLM5964-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-8C 5964-8C PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-25DA UJ11bU 44dBm -45dBc 32dBm 5964-25D PDF

    Untitled

    Abstract: No abstract text available
    Text: F| FLM7785-18DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz


    OCR Scan     		FLM7785-18DA UJ11jU -45dBc FLM7785-18DA PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-8D UJ11jU 39dBm -45dBc 28dBm FLM6472-8D PDF

    Untitled

    Abstract: No abstract text available
    Text: F| .ÇjU-, FMC2122C6-03 r UJ11ÒU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 18dBm Typ. High Gain: G-ih r = 13dB(Typ.) Low In/Out VSWR Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)


    OCR Scan     		FMC2122C6-03 18dBm FMC2122C6-03 PDF

    FLM7177-18DA

    Abstract: U/25/20/TN26/15/850/FLM6472-18DA
    Text: FLM7177-18DA Internally Matched Power GaAs FETs r UJ11j U FEATURES • • • • • • • High Output Power: P-idB = 42.5dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM7177-18DA UJ111 -45dBc FLM7177-18DA U/25/20/TN26/15/850/FLM6472-18DA PDF

    FLM6472-12d

    Abstract: FLM6472-12DA
    Text: F| FLM6472-12DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-12DA 41dBm -45dBc 30dBm FLM6472-12DA FLM6472-12d PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6D r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 34% (Typ.) Low IM 3 = -45dBc@Po = 27dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-6D UJ11jU -45dBc 27dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: f FLM6472-4D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-4D 36dBm -45dBc 25dBm FLM6472-4D PDF

    FLM1011-4C

    Abstract: No abstract text available
    Text: FLM1011-4C RI lîrrQi I Internally Matched Power GaAs FETs r UJ11jU FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM1011-4C UJ11jU FLM1011-4C PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-4C f i rim i i Internally Matched Power GaAs FETs r UJ11 j U FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: = 12dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		FLM3742-4C 36dBm FLM3742-4C PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-4D RI lîrrQi I r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM1011-4D UJ11jU -45dBc 25dBm FLM1011-4D PDF

    Untitled

    Abstract: No abstract text available
    Text: Filmali FLM3742-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P1dB = 39dBm Typ. High Gain: G1dB = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		FLM3742-8C 39dBm FLM3742-8C PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-8E m frT C II r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM3742-8E UJ11bU 39dBm -45dBc 28dBm FLM3742-8E PDF