2.5V "Power MOSFET"
Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is
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UK3018
OT-23
2SK3018
OT-323
400mA
UK3018L
UK3018G
UK3018-AE3-R
UK3018-ALt
QW-R502-313
2.5V "Power MOSFET"
MOSFET IGSS 100A
n-channel mosfet SOT-23
2SK3018 SOT-23
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2SK3018
Abstract: 3018G 2SK3018 UTC
Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is
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Original
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PDF
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UK3018
2SK3018
400mA
UK3018G-AE2-R
UK3018G-AL3-R
OT-23-3
OT-323
QW-R502-313
3018G
2SK3018 UTC
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3018G
Abstract: UK3018G Device Marking 313
Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low
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Original
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PDF
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UK3018
UK3018
400mA
UK3018G-AE2-R
UK3018G-AL3-R
OT-23-3
OT-323
QW-R502-313
3018G
UK3018G
Device Marking 313
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UK3018 Preliminary Power MOSFET 2 .5 V DRI V E SI LI CON N -CH AN N EL M OSFET ̈ DESCRI PT I ON The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low
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Original
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PDF
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UK3018
UK3018
400mA
UK3018G-AE2-R
UK3018G-AL3-R
QW-R502-313
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